MT25QL02GCBB8E12-0AUT vs W25H02JVTBIM 对比

详细并排对比 MT25QL02GCBB8E12-0AUT 出自 Micron Technology 和 W25H02JVTBIM 出自 Winbond。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT25QL02GCBB8E12-0AUT MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT - 2Gbit SPI NOR Flash 133MHz | Micron

MT25QL02GCBB8E12-0AUT ✓ 量产中
Winbond
W25H02JVTBIM W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM - 2Gb QSPI NOR Flash, 24-TFBGA | Winbond

W25H02JVTBIM ✓ 量产中

规格对比

参数 MT25QL02GCBB8E12-0AUT W25H02JVTBIM
品牌 Micron Technology Winbond
分类 Flash Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.65 $2.38
存储器类型 NOR Flash, Serial (SPI) Serial NOR Flash
Memory Capacity 2 Gbit (256 MB) —
存储组织 256M x 8 —
接口 SPI, Dual SPI, Quad I/O SPI / Dual SPI / Quad SPI / QPI / DTR
最大时钟频率 133 MHz —
电源电压 2.7 V to 3.6 V —
Programming Voltage 3 V —
工作温度 -40C to +125C -40C to +85C
封装 24-T-PBGA (6x8 mm) 24-ball TFBGA (8x6 mm)
安装类型 Surface Mount Surface Mount
Endurance 100000 write/erase cycles —
Qualification AEC-Q100 (automotive) —
特性 XIP, write enable latch, power-on reset, hardware/software write protection, absolute write protection, extended address access —
RoHS 状态 Compliant Compliant
Marking Code RW340 —
Supply Voltage Class 3 V (MT25QL series) —
Access Protocol Support Standard/Dual-Output/Dual-I/O/Quad-Output/Quad-I/O SPI —
Density — 2 Gbit (256M x 8)
Maximum Clock Rate — 133 MHz
Equivalent Throughput (Quad DTR) — 416 MHz (50 MB/s)
Access Time — 7.5 ns
Supply Voltage (VCC) — 2.7 V to 3.6 V
Sector Size — 4 KB uniform
Block Size — 32 KB and 64 KB
Program/Erase Endurance — 100,000 cycles per sector
Data Retention — 20 years
无卤 — Yes
JEDEC Manufacturer ID — 0xEF (Winbond)

数据手册与资源

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