MT40A1G8SA-075:E vs K4A8G085WC-BCTD Comparison
Detailed side-by-side comparison of MT40A1G8SA-075:E by Micron Technology and K4A8G085WC-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySpecification Comparison
| Parameter | MT40A1G8SA-075:E | K4A8G085WC-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Last Time Buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.30 | $50.85 |
| Memory Type | SDRAM - DDR4 | DDR4 SDRAM |
| Memory Size | 8Gbit (1G x 8) | — |
| Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | 2666 Mbps (PC4-2133) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | 1.2 V (1.14 V to 1.26 V) |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| Operating Temperature Range | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| Package | 78-FBGA (7.5x11 mm) | 78-ball FBGA (78FBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | Yes |
| Data Mask Function | Supported | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Ball Pitch | — | 0.8 mm |
| Operating Temperature | — | 0C to +95C |
| Standard Operating Temp Range | — | 0C to +85C |
| Burst Length | — | 8 (chop 4) |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |
| Interface Type | — | Synchronous, parallel |