MT40A256M16GE-075E:B vs K4AAG165WM-BCWE Comparison
Detailed side-by-side comparison of MT40A256M16GE-075E:B by Micron Technology and K4AAG165WM-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ Active
Specification Comparison
| Parameter | MT40A256M16GE-075E:B | K4AAG165WM-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.95 | $54.65 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 (1G x 16) |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s (DDR4-2666) | 3200 Mbps |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Package | 96-FBGA (9 x 14 mm) | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range for standard grade] | [DATA_NEEDED: temperature range for WM-BCWE] |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 16 Gbit |
| Interface | — | Parallel (DDR4) |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS Latency | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| RoHS Status | — | Compliant |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |