MT40A512M16JY-075E vs H5AN8G6NAFR-PBC Comparison
Detailed side-by-side comparison of MT40A512M16JY-075E by Micron Technology and H5AN8G6NAFR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A512M16JY-075E | H5AN8G6NAFR-PBC |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $30.50 | $3.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| Data Rate | 2666 MT/s | — |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Interface | Parallel | — |
| Package | 96-FBGA (8x14) | TFBGA-96 (rectangular) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| RoHS Status | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Features | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gbit |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Interface Type | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| Composition | — | CMOS |