MT40A512M16JY-075E vs MT40A512M16TB-062E:R Comparison

Detailed side-by-side comparison of MT40A512M16JY-075E by Micron Technology and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16JY-075E

MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E ✓ Active
Micron Technology
MT40A512M16TB-062E:R

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active

Specification Comparison

Parameter MT40A512M16JY-075E MT40A512M16TB-062E:R
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $30.50 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit (512M x 16)
Organization 512M x 16
Clock Frequency 1.33 GHz 1600 MHz
Data Rate 2666 MT/s 3200 MT/s
Supply Voltage (VDD/VDDQ) 1.14V to 1.26V 1.2V ±60mV
VPP Voltage 2.5V (-125mV, +250mV) 2.5V (-125mV, +250mV)
Interface Parallel Parallel
Package 96-FBGA (8x14) 96-FBGA (7.5x13 mm)
Mounting Type Surface Mount
Operating Temperature Range 0°C to +95°C (TC)
Refresh Time 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C)
RoHS Status Compliant Compliant
Features Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
I/O Type 1.2V pseudo open-drain 1.2V pseudo open-drain
CAS Latency 22
Operating Temperature 0°C to +95°C
Data Bus Width 16 bits

Datasheets & Resources

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