MT40A512M16JY-07EAIT:B vs AS4C512M16D4-75BIN Comparison

Detailed side-by-side comparison of MT40A512M16JY-07EAIT:B by Micron Technology and AS4C512M16D4-75BIN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16JY-07EAIT:B MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-07EAIT:B ✓ Active
Alliance Memory
AS4C512M16D4-75BIN AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4-75BIN - 8Gbit DDR4 SDRAM 512Mx16 | Alliance Memory

AS4C512M16D4-75BIN ✓ Active

Specification Comparison

Parameter MT40A512M16JY-07EAIT:B AS4C512M16D4-75BIN
Brand Micron Technology Alliance Memory
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $8.99
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit 8 Gbit
Organization 512M x 16 —
Clock Frequency 1.33 GHz 1.333 GHz
Data Rate 2666 MT/s 2666 Mbps
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Voltage 2.5V, -125mV, +250mV —
Interface Parallel POD
Package 96-FBGA (8x14) 96-FBGA (7.5x13)
Operating Temperature Range -40°C to +105°C (AIT grade) —
Refresh Time 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C —
I/O Type 1.2V pseudo open-drain —
VREFDQ On-die, internal, adjustable —
AEC-Q100 Qualified (AIT suffix) —
RoHS Compliant —
Memory Organization — 512M x 16
Access Time — 18 ns
Write Cycle Time — 15 ns
Supply Voltage — 1.2 V
Operating Temperature — -40°C to +95°C
Mounting Type — Surface Mount
Number of Pins — 96
RoHS Status — Compliant
Features — Auto self-refresh, auto precharge, asynchronous reset, output enable, CRC, data mask, write leveling, dynamic ODT, ZQ calibration

Datasheets & Resources

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