MT40A512M16LY-075:E vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of MT40A512M16LY-075:E by Micron Technology and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-075:E
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | MT40A512M16LY-075:E | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.80 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | β |
| Data Rate | 2666 MT/s | 3200 Mbps |
| Clock Frequency | 1.33 GHz | β |
| CAS Latency | 19 | β |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Interface | Parallel | Parallel |
| Package | 96-FBGA (7.5x13.5mm) | 96FBGA |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| Refresh Time | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C | β |
| Internal Banks (x16) | 8 banks (4 groups of 2) | β |
| I/O Type | 1.2V pseudo open-drain | β |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Density | β | 8 Gb |
| Organization | β | 512M x 16 |
| Supply Voltage | β | 1.2 V |
| Access Time (CAS Latency) | β | 19 ns |
| Operating Temperature | β | 0C to +85C |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | β | Compliant |
| Lead Free | β | Yes |