MT40A512M16TB-062E:R vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R ✓ Active
Specification Comparison
| Parameter | MT40A512M16TB-062E:R | H5AN8G6NDJR |
|---|---|---|
| Brand | Micron Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (512M x 16) | — |
| Data Rate | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Clock Frequency | 1600 MHz | — |
| CAS Latency | 22 | 22 cycles (at 3200 Mbps) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| Operating Temperature | 0°C to +95°C | — |
| Package | 96-FBGA (7.5x13 mm) | 96-ball FBGA (13mm x 7.5mm) |
| Interface | Parallel | — |
| Data Bus Width | 16 bits | — |
| Refresh Time | 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Features | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
| RoHS Status | Compliant | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage | — | 1.2 V |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |