MT40A512M16TB-062E vs E3AD8G16A4-HR Comparison
Detailed side-by-side comparison of MT40A512M16TB-062E by Micron Technology and E3AD8G16A4-HR by ELIXIR/NANYA. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT40A512M16TB-062E | E3AD8G16A4-HR |
|---|---|---|
| Brand | Micron Technology | ELIXIR/NANYA |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $60.00 | $8.60 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 1600 MHz (DDR4-3200) | 3200 MT/s |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV | — |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | — |
| tRCD | 19 ns | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| Operating Temperature Range | 0°C to +95°C (standard), -40°C to +95°C (IT) | — |
| Package | 96-FBGA (7.5x13 mm) | TFBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | — |
| Features | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS Status | Compliant | — |
| REACH Status | Compliant | — |
| Density | — | 8 Gb |
| Supply Voltage | — | 1.2 V |
| CAS Latency | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| Operating Temperature | — | 0C to +95C (TCASE) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |