MT40A512M16TB-062E vs E3AD8G16A4-HR 对比
详细并排对比 MT40A512M16TB-062E 出自 Micron Technology 和 E3AD8G16A4-HR 出自 ELIXIR/NANYA。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16TB-062E | E3AD8G16A4-HR |
|---|---|---|
| 品牌 | Micron Technology | ELIXIR/NANYA |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $60.00 | $8.60 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 1600 MHz (DDR4-3200) | 3200 MT/s |
| Supply Voltage - VDD/VDDQ | 1.2V ±60mV | — |
| Supply Voltage - VPP | 2.5V, -125mV, +250mV | — |
| tRCD | 19 ns | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| 工作温度范围 | 0°C to +95°C (standard), -40°C to +95°C (IT) | — |
| 封装 | 96-FBGA (7.5x13 mm) | TFBGA-96 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口 | Parallel | — |
| 特性 | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration | — |
| RoHS 状态 | Compliant | — |
| REACH Status | Compliant | — |
| Density | — | 8 Gb |
| 电源电压 | — | 1.2 V |
| CAS 延迟 | — | 22 |
| Burst Length | — | 8 (BC4 optional) |
| Number of Banks | — | 16 (4 bank groups) |
| Refresh | — | Auto-refresh and self-refresh |
| 工作温度 | — | 0C to +95C (TCASE) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Speed Grade | — | DDR4-3200 |