MT40A512M16TB-062E:J vs NT5AD512M16B4-HR Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:J by Micron Technology and NT5AD512M16B4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:J MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J ✓ Active
Nanya Technology
NT5AD512M16B4-HR NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E:J NT5AD512M16B4-HR
Brand Micron Technology Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $43.10
Memory Type SDRAM - DDR4 DDR4 SDRAM
Memory Size 8Gbit (512M x 16) —
Clock Frequency 1.6 GHz —
Access Time 19 ns —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV —
VPP Supply Voltage 2.5V (-125mV, +250mV) —
I/O Type 1.2V pseudo open-drain —
Refresh Time 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C —
Internal Banks (x16) 8 (2 groups of 4 banks each) —
Prefetch Architecture 8n-bit —
Package 96-FBGA (7.5x13.5 mm) 96-ball TFBGA
Operating Temperature Range 0°C to 95°C —
RoHS Status Compliant —
Lead-Free Yes —
Mounting Type Surface Mount —
Density — 8Gb
Organization — 512M x 16
Supply Voltage — 1.2V
Temperature Range — 0°C to +95°C
Data Rate — 3200 Mbps
Auto Self-Refresh — Yes
Built-in Temperature Sensor — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask — Yes
Write Leveling — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
CRC Function — Yes
RoHS — Compliant

Datasheets & Resources

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