MT40A512M8RH-075E:B vs K4A4G085WD-BCTD Comparison
Detailed side-by-side comparison of MT40A512M8RH-075E:B by Micron Technology and K4A4G085WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ ActiveSamsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | MT40A512M8RH-075E:B | K4A4G085WD-BCTD |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.15 | $2.05 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 512M x 8 | 512M x 8 |
| Data Rate | 2666 MT/s (DDR4-2666) | 2666 Mbps/pin |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| Interface Type | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| Reference Voltage | On-die internal adjustable VREFDQ generation | — |
| Package | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +85C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | — |
| Speed Grade Suffix | -075E | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Die Generation | — | D-die |
| Supply Voltage | — | 1.2 V |
| Ball Pitch | — | 0.8 mm |
| Interface | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |