MT40A512M8RH-075E:B vs K4A4G085WD-BCTD 对比
详细并排对比 MT40A512M8RH-075E:B 出自 Micron Technology 和 K4A4G085WD-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ 量产中规格对比
| 参数 | MT40A512M8RH-075E:B | K4A4G085WD-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.15 | $2.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 MT/s (DDR4-2666) | 2666 Mbps/pin |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 接口类型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| 基准电压 | On-die internal adjustable VREFDQ generation | — |
| 封装 | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range (standard grade)] | 0C to +85C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | — |
| Speed Grade Suffix | -075E | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Die Generation | — | D-die |
| 电源电压 | — | 1.2 V |
| Ball Pitch | — | 0.8 mm |
| 接口 | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |