MT41K256M16TW-107 vs H5TC4G63CFR-XXJ Comparison

Detailed side-by-side comparison of MT41K256M16TW-107 by Micron Technology and H5TC4G63CFR-xxJ by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT41K256M16TW-107 MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107 - 4Gb DDR3L SDRAM 933MHz | Micron

MT41K256M16TW-107 ✓ Active
SK hynix
H5TC4G63CFR-xxJ H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ ✓ Active

Specification Comparison

Parameter MT41K256M16TW-107 H5TC4G63CFR-xxJ
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $14.10 $5.90
Memory Type DDR3L SDRAM DDR3L SDRAM
Memory Size 4 Gbit —
Organization 256M x 16 256M x 16
Interface Parallel —
Clock Frequency 933 MHz (DDR3L-1866) —
Access Time 20 ns —
Supply Voltage 1.35 V —
Data Bus Width 16 bit —
Package 96-FBGA (8x14 mm) 96-ball FBGA
Mounting Type Surface Mount —
Operating Temperature 0C to +95C (commercial :P grade) —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Write Leveling Yes —
Dynamic On-Die Termination Yes —
ZQ Calibration Yes —
RoHS Status [DATA_NEEDED: RoHS status] —
MSL Level [DATA_NEEDED: MSL level] —
Density — 4 Gb
Supply Voltage (VDD/VDDQ) — 1.35V + 0.100 / - 0.067V
Clock Input — Fully differential (CK, CK#)
Data Strobe — Differential (DQS, DQS#)
On-Chip DLL — Yes
DM Mask — Yes
Operating Temperature Range — 0°C to 95°C (case)
RoHS — Compliant
Lead-Free — Yes
Halogen Free — Yes
Speed Grade — [DATA_NEEDED: speed grade for -xxJ suffix]
CAS Latency — [DATA_NEEDED: CAS latency options]
Burst Length — 8 and 4 (with burst chop)
On-Die Termination — Yes
Refresh — Auto-refresh and self-refresh

Datasheets & Resources

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