MW7IC18100NR1 vs MW7IC18100GNR1 Comparison
Detailed side-by-side comparison of MW7IC18100NR1 by NXP Semiconductors and MW7IC18100GNR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ ActiveSpecification Comparison
| Parameter | MW7IC18100NR1 | MW7IC18100GNR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $61.20 | $99.50 |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | 1805 MHz to 2050 MHz |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Package / Case | TO-270 WB-14 (Case 1618-02), plastic, flat leads | — |
| Mounting Type | Surface Mount (gull-wing flat leads) | Flange-mount, bolt-down |
| Lead Finish | e3 (matte tin) | — |
| Operating Temperature | -40C to +85C (case) | — |
| Body Material | Plastic / Epoxy | — |
| RoHS Status | Compliant | Compliant (lead-free) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MW7IC18100GNR1 |
| Part Family | — | MW7IC18100N series |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | — | 100 W CW (typical) |
| Power Gain | — | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | — | 48 % at 100 W CW |
| Supported Modulations | — | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | — | 180 mA / 1000 mA |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Package / Outline | — | TO-270 WB-14 GULL (flanged ceramic) |
| Package Body Material | — | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | — | Matte Tin (Sn) |
| On-Chip Matching | — | Yes (input matched; output partial) |
| Application | — | Cellular base-station PA, GSM/EDGE/CDMA |