MW7IC18100NR1 vs MW7IC18100GNR1 Comparaison
Comparaison détaillée côte à côte de MW7IC18100NR1 par NXP Semiconductors et MW7IC18100GNR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ ActifComparaison des spécifications
| Paramètre | MW7IC18100NR1 | MW7IC18100GNR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $61,20 | $99,50 |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | 1805 MHz to 2050 MHz |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Boîtier / Format | TO-270 WB-14 (Case 1618-02), plastic, flat leads | — |
| Type de montage | Surface Mount (gull-wing flat leads) | Flange-mount, bolt-down |
| Lead Finish | e3 (matte tin) | — |
| Température de fonctionnement | -40C to +85C (case) | — |
| Body Material | Plastic / Epoxy | — |
| Statut RoHS | Compliant | Compliant (lead-free) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MW7IC18100GNR1 |
| Part Family | — | MW7IC18100N series |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | — | 100 W CW (typical) |
| Power Gain | — | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | — | 48 % at 100 W CW |
| Supported Modulations | — | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | — | 180 mA / 1000 mA |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Package / Outline | — | TO-270 WB-14 GULL (flanged ceramic) |
| Package Body Material | — | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | — | Matte Tin (Sn) |
| On-Chip Matching | — | Yes (input matched; output partial) |
| Application | — | Cellular base-station PA, GSM/EDGE/CDMA |