MW7IC18100NR1 vs MW7IC18100GNR1 Comparación
Comparación detallada lado a lado de MW7IC18100NR1 por NXP Semiconductors y MW7IC18100GNR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ ActivoComparación de especificaciones
| Parámetro | MW7IC18100NR1 | MW7IC18100GNR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $61,20 | $99,50 |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | 1805 MHz to 2050 MHz |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Encapsulado / Carcasa | TO-270 WB-14 (Case 1618-02), plastic, flat leads | — |
| Tipo de montaje | Surface Mount (gull-wing flat leads) | Flange-mount, bolt-down |
| Lead Finish | e3 (matte tin) | — |
| Temperatura de funcionamiento | -40C to +85C (case) | — |
| Body Material | Plastic / Epoxy | — |
| Estado RoHS | Compliant | Compliant (lead-free) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MW7IC18100GNR1 |
| Part Family | — | MW7IC18100N series |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | — | 100 W CW (typical) |
| Power Gain | — | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | — | 48 % at 100 W CW |
| Supported Modulations | — | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | — | 180 mA / 1000 mA |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Package / Outline | — | TO-270 WB-14 GULL (flanged ceramic) |
| Package Body Material | — | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | — | Matte Tin (Sn) |
| On-Chip Matching | — | Yes (input matched; output partial) |
| Application | — | Cellular base-station PA, GSM/EDGE/CDMA |