N25Q256A83ESFA0F vs N25Q512A83G12A0F Comparison

Detailed side-by-side comparison of N25Q256A83ESFA0F by Micron Technology and N25Q512A83G12A0F by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
N25Q256A83ESFA0F N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F ✓ Active
Micron Technology
N25Q512A83G12A0F N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F ✓ Active

Specification Comparison

Parameter N25Q256A83ESFA0F N25Q512A83G12A0F
Brand Micron Technology Micron Technology
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $5.20
Memory Type NOR Flash, Serial SPI Flash - NOR Memory IC
Density 256 Mbit (32 MB) —
Organization 32M x 8 128M x 4
Interface SPI, Multiple I/O (Single/Dual/Quad) SPI - Multiple I/O (Standard/Dual/Quad)
Max Clock Frequency 108 MHz —
Supply Voltage 3 V (2.7 V to 3.6 V) 2.7 V to 3.6 V (3V class)
Technology 65nm NOR —
Sector Erase Size 4 KB 4 KB
Operating Temperature -40C to +125C [DATA_NEEDED: operating temperature range]
Features Execute-In-Place (XIP), Advanced Write Protection —
Package 16-SOIC Wide (16SO) 24-T-PBGA (6x8 mm)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Grade Industrial —
Memory Capacity — 512 Mbit (64 MB)
Clock Frequency — 108 MHz
Cell Type — SLC
Package Structure — Dual-Die Package (DDP)
Program/Erase Protection — Software and hardware write protection
Endurance — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: active read current]
Standby Current — [DATA_NEEDED: standby current]
MSL Level — [DATA_NEEDED: moisture sensitivity level]

Datasheets & Resources

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