N25Q256A83ESFA0F vs N25Q512A83G12A0F Vergleich
Detaillierter Direktvergleich von N25Q256A83ESFA0F von Micron Technology und N25Q512A83G12A0F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | N25Q256A83ESFA0F | N25Q512A83G12A0F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,05 | $5,20 |
| Speichertyp | NOR Flash, Serial SPI | Flash - NOR Memory IC |
| Density | 256 Mbit (32 MB) | — |
| Speicherorganisation | 32M x 8 | 128M x 4 |
| Schnittstelle | SPI, Multiple I/O (Single/Dual/Quad) | SPI - Multiple I/O (Standard/Dual/Quad) |
| Max Clock Frequency | 108 MHz | — |
| Versorgungsspannung | 3 V (2.7 V to 3.6 V) | 2.7 V to 3.6 V (3V class) |
| Technology | 65nm NOR | — |
| Sector Erase Size | 4 KB | 4 KB |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Eigenschaften | Execute-In-Place (XIP), Advanced Write Protection | — |
| Gehäuse | 16-SOIC Wide (16SO) | 24-T-PBGA (6x8 mm) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Grade | Industrial | — |
| Memory Capacity | — | 512 Mbit (64 MB) |
| Clock Frequency | — | 108 MHz |
| Cell Type | — | SLC |
| Package Structure | — | Dual-Die Package (DDP) |
| Program/Erase Protection | — | Software and hardware write protection |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read current] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |