NT5AD512M16A4-HR vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of NT5AD512M16A4-HR by Nanya Technology and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16A4-HR
NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-HR β ActiveMicron Technology
MT40A512M16JY-075E
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E β ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-HR | MT40A512M16JY-075E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.10 | $30.50 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gb | β |
| Supply Voltage | 1.2 V | β |
| Data Rate | 3200 Mbps (PC4-25600) | 2666 MT/s |
| Operating Temperature | 0Β°C to +95Β°C | β |
| Package | TFBGA-96 | 96-FBGA (8x14) |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| CRC Function | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| ZQ Calibration | Yes | β |
| Memory Size | β | 8 Gbit |
| Clock Frequency | β | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | β | 1.14V to 1.26V |
| VPP Voltage | β | 2.5V (-125mV, +250mV) |
| Interface | β | Parallel |
| Operating Temperature Range | β | 0Β°C to +95Β°C (TC) |
| Refresh Time | β | 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C |
| RoHS Status | β | Compliant |
| Features | β | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | β | 1.2V pseudo open-drain |