NT5CC256M16DP-DI vs H5TC4G63MFR-PBA Comparison
Detailed side-by-side comparison of NT5CC256M16DP-DI by Nanya Technology and H5TC4G63MFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CC256M16DP-DI | H5TC4G63MFR-PBA |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | — |
| Data Rate | 1600 Mbps/pin (800MHz) | 1866 Mbps (PC3L-14900) |
| Package | VFBGA-96 | 96-ball FBGA |
| Operating Temperature Range | -40°C to +95°C (industrial) | — |
| CAS Latency | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | BL8, BL4 (with burst chop) |
| Number of Banks | 8 | 8 |
| Interface | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |