NT5CC256M16DP-DI vs H5TC4G63MFR-PBA 对比
详细并排对比 NT5CC256M16DP-DI 出自 Nanya Technology 和 H5TC4G63MFR-PBA 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5CC256M16DP-DI | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.50 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.35V | — |
| 数据速率 | 1600 Mbps/pin (800MHz) | 1866 Mbps (PC3L-14900) |
| 封装 | VFBGA-96 | 96-ball FBGA |
| 工作温度范围 | -40°C to +95°C (industrial) | — |
| CAS 延迟 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | BL8, BL4 (with burst chop) |
| Number of Banks | 8 | 8 |
| 接口 | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |