PDRQLAKCDF12-00 vs K4RAH086VE-BCWM Comparison
Detailed side-by-side comparison of PDRQLAKCDF12-00 by Samsung Electronics and K4RAH086VE-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ ActiveSamsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ ActiveSpecification Comparison
| Parameter | PDRQLAKCDF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.60 | $7.60 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organization | 1G x 16 | 2G x 8 |
| Data Rate | 7200 Mbps per pin | 5600 Mbps |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| Package | 102-ball FBGA | 82-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) | DDR5 |
| Interface | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| CAS Latency | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CL at 5600 Mbps] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Lifecycle Status | — | Mass Production |
| Manufacturer | — | Samsung Electronics |