PDRQLAKCDF12-00 vs K4RAH086VE-BCWM 对比
详细并排对比 PDRQLAKCDF12-00 出自 Samsung Electronics 和 K4RAH086VE-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ 量产中Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ 量产中规格对比
| 参数 | PDRQLAKCDF12-00 | K4RAH086VE-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.60 | $7.60 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 1G x 16 | 2G x 8 |
| 数据速率 | 7200 Mbps per pin | 5600 Mbps |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| 封装 | 102-ball FBGA | 82-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) | DDR5 |
| 接口 | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | [DATA_NEEDED: CL at 5600 Mbps] |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.1 V |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| 生命周期状态 | — | Mass Production |
| Manufacturer | — | Samsung Electronics |