RTAX4000D-CQ352V vs RTAX1000SL-CQ352V Comparison
Detailed side-by-side comparison of RTAX4000D-CQ352V by Microchip Technology and RTAX1000SL-CQ352V by Microchip Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Microchip Technology
RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology
RTAX4000D-CQ352V ✓ ActiveMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActiveSpecification Comparison
| Parameter | RTAX4000D-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $0.00 |
| Equivalent System Gates | 4,000,000 gates | 1,000,000 |
| Logic Cells | 55,440 | 18,144 |
| CLB Organization | 36,960 CLBs | — |
| Number of User I/Os | 166 | — |
| Technology | Digital, CMOS | — |
| Programmability Type | Antifuse (OTP), live at power-up | — |
| Family | RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Operating Temperature Min | -55 C | — |
| Operating Temperature Max | +125 C | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package | CQ352 ceramic column grid array | 352-pin Ceramic CQFP (CQ352V) |
| Application Domain | Space flight systems (radiation-tolerant) | — |
| Radiation Tolerance | [DATA_NEEDED: TID and SEE ratings] | Radiation-tolerant, space-flight qualified family |
| Core Supply Voltage | [DATA_NEEDED: core voltage] | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |