RTAX4000D-CQ352V vs RTAX1000SL-CQ352V 比較
詳細な並列比較: RTAX4000D-CQ352V メーカー: Microchip Technology および RTAX1000SL-CQ352V メーカー: Microchip Technology。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Microchip Technology
RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology
RTAX4000D-CQ352V ✓ 生産中Microchip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ 生産中仕様比較
| パラメータ | RTAX4000D-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| ブランド | Microchip Technology | Microchip Technology |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.00 |
| Equivalent System Gates | 4,000,000 gates | 1,000,000 |
| Logic Cells | 55,440 | 18,144 |
| CLB Organization | 36,960 CLBs | — |
| Number of User I/Os | 166 | — |
| Technology | Digital, CMOS | — |
| Programmability Type | Antifuse (OTP), live at power-up | — |
| Family | RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Operating Temperature Min | -55 C | — |
| Operating Temperature Max | +125 C | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ | CQ352 ceramic column grid array | 352-pin Ceramic CQFP (CQ352V) |
| Application Domain | Space flight systems (radiation-tolerant) | — |
| Radiation Tolerance | [DATA_NEEDED: TID and SEE ratings] | Radiation-tolerant, space-flight qualified family |
| Core Supply Voltage | [DATA_NEEDED: core voltage] | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| 動作温度 | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| MSLレベル | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |