RTAX4000D-CQ352V vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX4000D-CQ352V par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology
RTAX4000D-CQ352V ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX4000D-CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Equivalent System Gates | 4,000,000 gates | 1,000,000 |
| Logic Cells | 55,440 | 18,144 |
| CLB Organization | 36,960 CLBs | — |
| Number of User I/Os | 166 | — |
| Technology | Digital, CMOS | — |
| Programmability Type | Antifuse (OTP), live at power-up | — |
| Family | RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Embedded SRAM with built-in FIFO control logic |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Operating Temperature Min | -55 C | — |
| Operating Temperature Max | +125 C | — |
| Type de montage | Surface Mount | Surface Mount |
| Boîtier | CQ352 ceramic column grid array | 352-pin Ceramic CQFP (CQ352V) |
| Application Domain | Space flight systems (radiation-tolerant) | — |
| Radiation Tolerance | [DATA_NEEDED: TID and SEE ratings] | Radiation-tolerant, space-flight qualified family |
| Core Supply Voltage | [DATA_NEEDED: core voltage] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Process Technology | — | 0.15 um CMOS |
| Core Voltage | — | 1.5 V |
| Programming Technology | — | Antifuse (one-time programmable) |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |