SS0530 vs BSS126H6327XTSA2 Comparison

Detailed side-by-side comparison of SS0530 by Panjit and BSS126H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter SS0530 BSS126H6327XTSA2
Brand Panjit Infineon
Category Diodes MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.03 $0.32
Manufacturer Panjit International Inc. —
Part Number SS0530 (ordering code SS0530_R1_00001) —
Device Type Schottky Barrier Diode —
Configuration Single Single
Package SOD-123 SOT-23-3 (PG-SOT23)
Mounting Type Surface Mount Surface Mount
Maximum Repetitive Peak Reverse Voltage (VRRM) 30 V —
Maximum DC Blocking Voltage (VR) 30 V —
Maximum Average Rectified Forward Current (IF(AV)) 0.5 A —
Non-Repetitive Peak Forward Surge Current (IFSM) 5.0 A —
Forward Voltage Drop (Vf) [DATA_NEEDED: Vf at rated IF] —
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
Operating Junction Temperature Range -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) —
Storage Temperature Range -55 C to +150 C (typical) —
Diode Family / Part Series SS0520-SS0540 (Low-Vf Schottky) —
RoHS Status Compliant (Pb-free matte tin finish) Compliant
Packaging Tape and Reel (R1) —
FET Type — N-Channel Depletion Mode
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
Operating Temperature Range — -55C to +150C (junction, typical)
Pin Count — 3
Channel Mode — Depletion (normally-on at VGS = 0)
MSL Level — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
Halogen Free — Yes (Infineon 'green' package)

Datasheets & Resources

Browse All Products Create BOM Request Quote