SS0530 vs BSS126H6327XTSA2 비교
다음의 상세 나란히 비교: SS0530 제조: Panjit 및 BSS126H6327XTSA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | SS0530 | BSS126H6327XTSA2 |
|---|---|---|
| 브랜드 | Panjit | Infineon |
| 카테고리 | Diodes | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.03 | $0.32 |
| Manufacturer | Panjit International Inc. | — |
| Part Number | SS0530 (ordering code SS0530_R1_00001) | — |
| Device Type | Schottky Barrier Diode | — |
| Configuration | Single | Single |
| 패키지 | SOD-123 | SOT-23-3 (PG-SOT23) |
| 실장 유형 | Surface Mount | Surface Mount |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Maximum DC Blocking Voltage (VR) | 30 V | — |
| Maximum Average Rectified Forward Current (IF(AV)) | 0.5 A | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 5.0 A | — |
| Forward Voltage Drop (Vf) | [DATA_NEEDED: Vf at rated IF] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: IR at rated VR] | — |
| 동작 접합 온도 범위 | -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) | — |
| Storage Temperature Range | -55 C to +150 C (typical) | — |
| Diode Family / Part Series | SS0520-SS0540 (Low-Vf Schottky) | — |
| RoHS 상태 | Compliant (Pb-free matte tin finish) | Compliant |
| Packaging | Tape and Reel (R1) | — |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| 동작 온도 범위 | — | -55C to +150C (junction, typical) |
| 핀 수 | — | 3 |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |
| 할로겐 프리 | — | Yes (Infineon 'green' package) |