SS0530 vs BSS126H6327XTSA2 对比

详细并排对比 SS0530 出自 Panjit 和 BSS126H6327XTSA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS126H6327XTSA2 BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 - 600V N-Ch Depletion MOSFET SOT-23 | Infineon

BSS126H6327XTSA2 ✓ 量产中

规格对比

参数 SS0530 BSS126H6327XTSA2
品牌 Panjit Infineon
分类 Diodes MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.03 $0.32
Manufacturer Panjit International Inc. —
Part Number SS0530 (ordering code SS0530_R1_00001) —
Device Type Schottky Barrier Diode —
Configuration Single Single
封装 SOD-123 SOT-23-3 (PG-SOT23)
安装类型 Surface Mount Surface Mount
Maximum Repetitive Peak Reverse Voltage (VRRM) 30 V —
Maximum DC Blocking Voltage (VR) 30 V —
Maximum Average Rectified Forward Current (IF(AV)) 0.5 A —
Non-Repetitive Peak Forward Surge Current (IFSM) 5.0 A —
Forward Voltage Drop (Vf) [DATA_NEEDED: Vf at rated IF] —
Reverse Leakage Current (IR) [DATA_NEEDED: IR at rated VR] —
工作结温范围 -55 C to +150 C (typical for SOD-123 Schottky, verify per datasheet) —
Storage Temperature Range -55 C to +150 C (typical) —
Diode Family / Part Series SS0520-SS0540 (Low-Vf Schottky) —
RoHS 状态 Compliant (Pb-free matte tin finish) Compliant
Packaging Tape and Reel (R1) —
FET Type — N-Channel Depletion Mode
Drain-Source Voltage (VDS) Max — 600 V
Continuous Drain Current (ID) at Ta — 21 mA
Power Dissipation (PD) at Ta — 500 mW
On-Resistance (RDS(on)) Max — 500 ohm (typical for depletion-mode)
Gate-Source Voltage (VGS) Range — [DATA_NEEDED: VGS max/min]
Technology — SIPMOS (DMOS)
工作温度范围 — -55C to +150C (junction, typical)
引脚数量 — 3
Channel Mode — Depletion (normally-on at VGS = 0)
MSL 等级 — 1 (per JEDEC J-STD-020)
Lead-Free — Yes
无卤 — Yes (Infineon 'green' package)

数据手册与资源

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