STB80NF55-06T4 vs STB80NF55-08AG Comparison

Detailed side-by-side comparison of STB80NF55-06T4 by STMicroelectronics and STB80NF55-08AG by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STB80NF55-06T4 STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics

STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics

STB80NF55-06T4 ✓ Active

Specification Comparison

Parameter STB80NF55-06T4 STB80NF55-08AG
Brand STMicroelectronics STMicroelectronics
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.38 $0.81
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at 25°C 80 A —
Continuous Drain Current (ID) at 100°C 56 A —
Pulsed Drain Current (IDM) 320 A —
Gate-Source Voltage (VGS) ±20 V —
On-Resistance (RDS(on)) at VGS=10V 6.5 mΩ (typ), 8 mΩ (max) —
Gate Charge (Qg) 80 nC (typ) [DATA_NEEDED: gate charge value]
Input Capacitance (Ciss) 4500 pF (typ) [DATA_NEEDED: input capacitance value]
Output Capacitance (Coss) 700 pF (typ) —
Reverse Transfer Capacitance (Crss) 250 pF (typ) —
Power Dissipation (PD) 300 W 300 W (Tc)
Operating Temperature Range -55°C to +175°C -55°C to +175°C
Package D2PAK (TO-263) D2PAK (TO-263)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Halogen Free Yes —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 80 A (Tc)
On-Resistance (RDS(on)) — 6.5 mΩ typ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage value]
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Grade — AEC-Q101 qualified
Technology — STripFET

Datasheets & Resources

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