STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
MPN: STB80NF55-06T4 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.93 | $19.30 |
| 100 | $1.72 | $172.00 |
| 500 | $1.55 | $775.00 |
| 1,000 | $1.38 | $1,380.00 |
Drop-in alternatives for STB80NF55-06T4 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
STB80NF55-06
✅ Drop-In📋 Reference alternative (not in catalog)
STB80NF55-06T4
✅ Drop-In✓ 99,999 In Stock
$1.38 / Unit
View Datasheet →STB80NF55-06T4 Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at 25°C | 80 A |
| Continuous Drain Current (ID) at 100°C | 56 A |
| Pulsed Drain Current (IDM) | 320 A |
| Gate-Source Voltage (VGS) | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | 6.5 mΩ (typ), 8 mΩ (max) |
| Gate Charge (Qg) | 80 nC (typ) |
| Input Capacitance (Ciss) | 4500 pF (typ) |
| Output Capacitance (Coss) | 700 pF (typ) |
| Reverse Transfer Capacitance (Crss) | 250 pF (typ) |
| Power Dissipation (PD) | 300 W |
| Operating Temperature Range | -55°C to +175°C |
| Package | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
STB80NF55-06T4 Pin Configuration
| Pin 1 | Gate — Gate terminal for controlling the MOSFET |
| Pin 2 | Drain — Drain terminal, connected to the tab |
| Pin 3 | Source — Source terminal |
| Pin 4 | Drain (tab) — Exposed pad connected to drain |
Safe Operating Area
Typical Applications
STB80NF55-06T4 is suitable for 6 applications: DC-DC Converters, Motor Control, Power Supplies, Battery Management Systems, Automotive Applications, Industrial Automation.
DC-DC Converters
The STB80NF55-06T4 is ideal for DC-DC converter output stages due to its low on-resistance (6.5 mΩ) and high current capability (80A). In a typical buck converter, the MOSFET switches at high frequency to regulate output voltage. The low RDS(on) minimizes conduction losses, improving efficiency. The fast switching speed, enabled by a gate charge of 80 nC, reduces switching losses. The D2PAK package allows efficient heat dissipation, crucial for high-power converters. Designers should ensure adequate gate drive voltage (10V) to achieve minimum on-resistance and use proper snubber circuits to manage parasitic inductance.
Recommended
Motor Control
In motor control applications, the STB80NF55-06T4 handles high inrush currents and inductive loads. Its 80A continuous current rating and 320A pulsed current capability ensure robustness during motor startup and stall conditions. The low on-resistance reduces heat generation, allowing continuous operation without excessive thermal stress. The integrated body diode provides freewheeling path for inductive currents, simplifying H-bridge designs. For PWM control, the MOSFET's fast switching reduces dead-time requirements. Thermal management is critical; use heatsinks or active cooling for high-duty-cycle applications. The device's wide operating temperature range (-55°C to +175°C) suits industrial environments.
Recommended
Power Supplies
The STB80NF55-06T4 is suitable for switch-mode power supplies (SMPS) in both primary and secondary sides. Its 55V VDS rating is adequate for 12V to 24V systems, and the 80A current capability supports high-power outputs. The low RDS(on) reduces conduction losses, improving overall efficiency. The fast switching speed allows higher switching frequencies, reducing transformer size. The D2PAK package's low thermal resistance (1.0°C/W) aids heat dissipation. Designers should consider gate drive power and use proper layout to minimize parasitic inductance. The device's RoHS compliance meets environmental standards.
Recommended
Battery Management Systems
In battery management systems (BMS), the STB80NF55-06T4 is used for charge/discharge switching and protection. Its high current rating (80A) handles large battery currents, while the low on-resistance minimizes voltage drop and power loss. The device's fast switching enables efficient cell balancing. The wide operating temperature range ensures reliable operation in automotive and industrial battery packs. The D2PAK package allows compact PCB design with adequate thermal management. For protection circuits, the MOSFET's avalanche capability (not specified but typical) provides robustness against voltage spikes. Designers should ensure proper gate drive and consider the device's SOA for safe operation.
Recommended
Automotive Applications
The STB80NF55-06T4 is suitable for automotive applications such as electric power steering, DC-DC converters, and motor drives. Its 55V VDS rating is compatible with 12V and 24V automotive systems. The high current capability (80A) supports heavy loads, and the low on-resistance reduces heat generation. The device's wide temperature range (-55°C to +175°C) meets automotive requirements. The D2PAK package is robust for vibration and thermal cycling. For automotive use, ensure AEC-Q101 qualification (not specified, but ST offers automotive-grade variants). The device's fast switching improves efficiency in PWM-controlled loads.
Recommended
Industrial Automation
In industrial automation, the STB80NF55-06T4 is used in motor drives, robotics, and power distribution. Its high current rating and low on-resistance ensure efficient power switching. The device's ruggedness handles inductive loads and transient voltages. The wide operating temperature range suits factory environments. The D2PAK package allows easy mounting on heatsinks. For PLC outputs, the MOSFET can drive solenoids and relays. The fast switching speed enables precise control in servo drives. Designers should implement proper snubber circuits and thermal management to ensure long-term reliability.
Recommended
Recommended Products Summary
Engineering reference data for STB80NF55-06T4 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | STB80NF55-06 | IRFB4110 | IRF3205 | FDP80N06 |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | Infineon | onsemi |
| VDS (V) | 55 | 55 | 100 | 55 | 60 |
| ID at 25°C (A) | 80 | 80 | 180 | 110 | 80 |
| RDS(on) (mΩ) | 6.5 | 6.5 | 4.5 | 8.0 | 7.0 |
| Qg (nC) | 80 | 80 | 120 | 98 | 85 |
| PD (W) | 300 | 300 | 370 | 200 | 150 |
| Operating Temp (°C) | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 | -55 to +175 |
Key Differentiators
- Low on-resistance of 6.5 mΩ (vs IRF3205)
- High current rating of 80A (vs FDP80N06)
- D2PAK package with low thermal resistance (vs IRFB4110)
Design Notes
The STB80NF55-06T4 can dissipate up to 300W, but this requires excellent thermal management. The D2PAK package has a junction-to-case thermal resistance of 1.0°C/W. For continuous operation at high currents, use a heatsink or a large copper area on the PCB. Calculate the junction temperature using TJ = TA + (PD × RθJA). For example, at 80A and RDS(on)=6.5mΩ, conduction loss is 41.6W, which would raise the junction temperature by 41.6°C above the case temperature. Ensure the case temperature stays below 150°C to avoid exceeding the maximum junction temperature.
For high-current switching, minimize parasitic inductance in the gate and drain loops. Place the gate driver close to the MOSFET to reduce gate loop inductance. Use wide, short traces for the drain and source connections to handle high currents and reduce voltage spikes. Add a low-ESR ceramic capacitor (e.g., 100nF) near the drain and source pins to absorb high-frequency noise. For the D2PAK package, ensure the exposed pad is soldered to a large copper area with thermal vias to improve heat dissipation.
Do not exceed the maximum VGS of ±20V, as this can damage the gate oxide. Use a gate driver that provides a clean 10V to 12V gate drive to achieve low RDS(on). Avoid operating the device beyond its SOA, especially during linear mode operation. Ensure proper dead-time in half-bridge configurations to prevent shoot-through. Also, consider the body diode's reverse recovery characteristics when switching inductive loads; adding a Schottky diode in parallel may be necessary for high-frequency operation.
Compliance Information
RoHS compliant and halogen-free per ST datasheet. AEC-Q100 not applicable for discrete MOSFETs; automotive qualification may be available in other variants.