STMicroelectronics

STB80NF55-08AG - 55V 80A Automotive N-Channel MOSFET | STMicroelectronics

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55 V Vdss 80 A (Tc) Id 6.5 mΩ typ Rds(on) D2PAK (TO-263) Package
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Drop-in alternatives for STB80NF55-08AG — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

STB80NF55-06T4

✅ Drop-In
STMicroelectronics
📦 D2PAK (TO-263)
N-Channel · 55 V · 80 A · 56 A · 320 A · ±20 V · 6.5 mΩ (typ), 8 mΩ (max) · 80 nC (typ)

✓ 99,999 In Stock

$1.38 / Unit

View Datasheet →

STB80NF55L-06T4

✅ Drop-In
📦 D2PAK (TO-263)
Lower on-resistance (6.0 mΩ), industrial grade

📋 Reference alternative (not in catalog)

VBL1606

✅ Drop-In
📦 D2PAK (TO-263)
Cross-brand, similar electrical specs, verify pinout

📋 Reference alternative (not in catalog)

ℹ️ 2 cross-package part(s) hidden — different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

STB80NF55-08AG Maximum Ratings & Electrical Characteristics

Polarity N-Channel
Drain-to-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) 80 A (Tc)
On-Resistance (RDS(on)) 6.5 mΩ typ
Power Dissipation (PD) 300 W (Tc)
Gate Charge (Qg) [DATA_NEEDED: gate charge value]
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance value]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage value]
Avalanche Energy (EAS) 100% avalanche tested
Operating Temperature Range -55°C to +175°C
Package D2PAK (TO-263)
Mounting Type Surface Mount
Automotive Grade AEC-Q101 qualified
RoHS Status Compliant
Technology STripFET

STB80NF55-08AG Pin Configuration

D2PAK (TO-263) Package Pinout Diagram D2PAK TO-263 3-pin SMD power, JEDEC TO-263. Large thermal tab. 1 2 3 D2PAK (TO-263)
Pin 1 Gate (G) — Gate terminal for controlling the MOSFET
Pin 2 Drain (D) — Drain terminal, connected to the tab
Pin 3 Source (S) — Source terminal

Safe Operating Area

DC Continuous Operation

Typical Applications

STB80NF55-08AG is suitable for 6 applications: Automotive Engine Control Units (ECUs), DC-DC Converters, Motor Control, Battery Management Systems (BMS), Telecom Power Supplies, Industrial Power Supplies.

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Automotive Engine Control Units (ECUs)

The STB80NF55-08AG is ideal for automotive ECUs due to its AEC-Q101 qualification and low on-resistance. In an ECU, it is used as a high-side or low-side switch for controlling actuators, solenoids, and relays. The device's 55V rating provides ample headroom for automotive load-dump transients, while its 80A current capability handles high inrush currents. The low RDS(on) of 6.5 mΩ minimizes conduction losses, improving overall system efficiency and reducing heat generation. The D2PAK package allows for efficient heat dissipation through the PCB copper pour, ensuring reliable operation in the harsh under-hood environment. The fast switching speed, enabled by the STripFET process, reduces switching losses and allows for higher PWM frequencies, which is beneficial for precise control of actuators. Additionally, the 100% avalanche testing ensures robustness against inductive load switching, a common scenario in automotive applications. The wide operating temperature range of -55°C to +175°C ensures functionality in extreme climates. Overall, the STB80NF55-08AG provides the reliability and performance required for critical automotive control systems.

DC-DC Converters

The STB80NF55-08AG is well-suited for DC-DC converters, particularly in isolated topologies like forward and full-bridge converters. Its low gate charge and input capacitance, resulting from the STripFET process, enable high-frequency switching, which reduces the size of magnetic components and improves power density. The low on-resistance of 6.5 mΩ minimizes conduction losses, which is critical for achieving high efficiency in power conversion. In a typical synchronous buck converter, the STB80NF55-08AG can be used as the high-side switch, where its fast switching speed reduces transition losses. The device's 55V rating is suitable for 12V and 24V input systems, providing adequate margin for voltage spikes. The 80A current rating allows for high output currents, making it suitable for server power supplies and telecom rectifiers. The D2PAK package's low thermal resistance enables efficient heat transfer to the PCB, allowing for continuous operation at high power levels. The 100% avalanche testing ensures the device can withstand energy from inductive loads, which is important in converter applications. Overall, the STB80NF55-08AG offers a balance of low losses and high reliability, making it a preferred choice for high-efficiency DC-DC converters.

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Motor Control

The STB80NF55-08AG is an excellent choice for motor control applications, including brushless DC (BLDC) motors and brushed DC motors. In a three-phase BLDC motor drive, the MOSFET is used in the inverter stage to switch the motor windings. The device's low on-resistance reduces conduction losses, which is essential for maximizing motor efficiency and extending battery life in electric vehicles. The fast switching speed, enabled by the low gate charge, allows for high PWM frequencies, resulting in smoother motor operation and reduced acoustic noise. The 55V rating is suitable for 12V, 24V, and 48V motor systems, providing adequate voltage margin. The 80A current capability handles the high peak currents during motor startup and stall conditions. The D2PAK package's thermal performance ensures the MOSFET can dissipate heat generated during continuous operation, preventing thermal shutdown. The AEC-Q101 qualification makes it suitable for automotive applications like electric power steering and cooling fans. The 100% avalanche testing ensures robustness against inductive spikes generated by the motor windings. Overall, the STB80NF55-08AG provides the performance and reliability needed for efficient and durable motor control systems.

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Battery Management Systems (BMS)

The STB80NF55-08AG is well-suited for battery management systems (BMS) in electric vehicles and energy storage systems. In a BMS, the MOSFET is used for cell balancing, charge/discharge control, and protection circuits. The device's low on-resistance minimizes power loss during high-current charging and discharging, improving overall system efficiency. The 55V rating is suitable for battery packs with nominal voltages up to 48V, providing adequate margin for voltage transients. The 80A current capability allows for high charge/discharge rates, which is essential for fast charging and high-power applications. The AEC-Q101 qualification ensures reliability in automotive BMS applications, where the device may be exposed to vibration, temperature extremes, and electrical stress. The D2PAK package's thermal performance allows for efficient heat dissipation, preventing overheating during high-current operation. The 100% avalanche testing ensures the MOSFET can handle inductive spikes from the battery and load. The fast switching speed enables efficient PWM control for cell balancing, reducing energy loss. Overall, the STB80NF55-08AG provides the robustness and efficiency required for modern BMS designs.

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Telecom Power Supplies

The STB80NF55-08AG is an ideal choice for telecom power supplies, where high efficiency and reliability are paramount. In a typical isolated DC-DC converter for telecom applications, the MOSFET is used as the primary switch. The device's low on-resistance and low gate charge, resulting from the STripFET process, enable high-frequency switching, which reduces the size of transformers and inductors, saving PCB space and cost. The 55V rating is suitable for 48V telecom bus systems, providing adequate margin for voltage spikes. The 80A current capability allows for high output power, making it suitable for rectifiers and power modules. The D2PAK package's thermal performance ensures efficient heat dissipation, allowing for continuous operation at high power levels. The 100% avalanche testing ensures the device can withstand energy from the transformer's leakage inductance, which is critical for reliable operation. The low input capacitance reduces gate drive requirements, simplifying the gate drive circuit. Overall, the STB80NF55-08AG offers the performance and reliability needed for high-efficiency telecom power supplies.

🏭

Industrial Power Supplies

The STB80NF55-08AG is well-suited for industrial power supplies, including AC-DC converters and DC-DC converters. In an AC-DC converter, the MOSFET is used in the power factor correction (PFC) stage and the main switching stage. The device's low on-resistance minimizes conduction losses, improving overall efficiency and reducing heat generation. The 55V rating is suitable for 24V and 48V industrial bus systems, providing adequate margin for voltage transients. The 80A current capability allows for high output power, making it suitable for industrial equipment like motor drives, welding machines, and CNC machines. The D2PAK package's thermal performance ensures efficient heat dissipation, allowing for continuous operation in harsh industrial environments. The 100% avalanche testing ensures robustness against inductive spikes from motors and transformers. The fast switching speed enables high-frequency operation, reducing the size of magnetic components and improving power density. The device's wide operating temperature range of -55°C to +175°C ensures reliable operation in extreme conditions. Overall, the STB80NF55-08AG provides the performance and reliability required for demanding industrial power supply applications.

Recommended Products Summary

L9779 STMicroelectronics Used in: Automotive Engine Control Units (ECUs) VNH7100 H-bridge motor driver for actuator control Used in: Automotive Engine Control Units (ECUs) L4981 PFC controller for power factor correction Used in: DC-DC Converters, Telecom Power Supplies, Industrial Power Supplies L6563 Transition-mode PFC controller Used in: DC-DC Converters, Telecom Power Supplies, Industrial Power Supplies L6235 Three-phase motor driver Used in: Motor Control VNH5019 STMicroelectronics Used in: Motor Control L9963E Battery monitoring and balancing IC Used in: Battery Management Systems (BMS) L9961 Battery management IC for automotive Used in: Battery Management Systems (BMS)
What is the drain-to-source voltage rating of STB80NF55-08AG?
The STB80NF55-08AG has a drain-to-source voltage (VDS) rating of 55V. According to the STMicroelectronics datasheet, this is the maximum voltage that can be applied between the drain and source terminals without causing breakdown.
What is the maximum continuous drain current of STB80NF55-08AG?
The STB80NF55-08AG can handle a continuous drain current (ID) of 80A at a case temperature (Tc) of 25°C. This rating is specified in the STMicroelectronics datasheet and is crucial for high-power switching applications.
What is the on-resistance of STB80NF55-08AG?
The typical on-resistance (RDS(on)) of the STB80NF55-08AG is 6.5 mΩ. This low on-resistance minimizes conduction losses, making the device highly efficient for power conversion applications.
Is STB80NF55-08AG suitable for automotive applications?
Yes, the STB80NF55-08AG is an automotive-grade MOSFET qualified to AEC-Q101 standards. This ensures it meets the rigorous reliability and quality requirements for automotive electronics, including operation in harsh environments.
What is the power dissipation rating of STB80NF55-08AG?
The STB80NF55-08AG has a maximum power dissipation rating of 300W at a case temperature (Tc) of 25°C. This rating indicates the device's ability to dissipate heat without exceeding its maximum junction temperature.
What package is STB80NF55-08AG available in?
The STB80NF55-08AG is available in a D2PAK (TO-263) surface-mount package. This package is designed for efficient heat dissipation and is suitable for high-power applications where PCB space is a consideration.
What is the operating temperature range of STB80NF55-08AG?
The STB80NF55-08AG operates over a junction temperature range of -55°C to +175°C. This wide range ensures reliable operation in both extreme cold and hot environments, typical of automotive and industrial applications.
What is the gate charge of STB80NF55-08AG?
The gate charge (Qg) of the STB80NF55-08AG is not explicitly listed in the provided data. However, the STripFET process is designed to minimize gate charge, which reduces gate drive requirements and improves switching efficiency. For the exact value, refer to the official datasheet.
Where can I buy STB80NF55-08AG online?
The STB80NF55-08AG is available from major distributors such as Mouser, DigiKey, and LCSC. As of 2026-08-14, LCSC lists the price starting from $0.9306. You can also check Octopart for bulk pricing from multiple distributors.
What is the price of STB80NF55-08AG?
As of 2026-08-14, the price of STB80NF55-08AG varies by distributor and quantity. LCSC lists a starting price of $0.9306. For bulk pricing, Octopart shows discounts from 5 distributors. Contact your preferred distributor for the most current quote.
What is the lead time for STB80NF55-08AG?
The lead time for STB80NF55-08AG depends on the distributor and current stock levels. Distributors like Mouser and DigiKey typically have stock available for immediate shipment. For large orders, lead times may vary; check with the distributor for specific availability.
Is STB80NF55-08AG in stock?
Yes, the STB80NF55-08AG is in stock at several distributors. LCSC shows it as an in-stock component, and DigiKey lists it as available for purchase. For real-time stock levels, check the distributor's website.
STB80NF55-08AG vs STB80NF55-06T4 - which is better for high-current switching?
The STB80NF55-08AG has a typical on-resistance of 6.5 mΩ, while the STB80NF55-06T4 has a lower on-resistance of 6.0 mΩ (as per the datasheet). For high-current switching, the lower on-resistance of the STB80NF55-06T4 results in lower conduction losses, making it slightly more efficient. However, both are 55V, 80A devices in the same D2PAK package, so the choice depends on the specific efficiency requirements of your application.
What is the difference between STB80NF55-08AG and STB80NF55L-06T4?
The STB80NF55-08AG is an automotive-grade (AEC-Q101) MOSFET with a typical on-resistance of 6.5 mΩ. The STB80NF55L-06T4 is an industrial-grade device with a lower on-resistance of 6.0 mΩ. Both are N-channel 55V, 80A MOSFETs in D2PAK packages, but the STB80NF55-08AG is qualified for automotive applications, while the STB80NF55L-06T4 is not.
When should I choose STB80NF55-08AG over STB80N20M5?
Choose the STB80NF55-08AG when you need a 55V MOSFET with automotive qualification (AEC-Q101) for applications like automotive ECUs or battery management systems. The STB80N20M5 is a 200V device from the MDmesh M5 series, suitable for higher voltage applications. If your system operates at 55V or lower and requires automotive reliability, the STB80NF55-08AG is the better choice.
What is the best drop-in replacement for STB80NF55-08AG?
The best drop-in replacement for STB80NF55-08AG is the STB80NF55-06T4, which shares the same D2PAK package and pinout, and has a lower on-resistance of 6.0 mΩ. Other same-brand alternatives include the STP80NF55-08 (TO-220) and STW80NF55-08 (TO-247), but these have different packages and are not drop-in compatible.
Can STB80NF55-06T4 replace STB80NF55-08AG?
Yes, the STB80NF55-06T4 can replace the STB80NF55-08AG as it is pin-to-pin compatible and shares the same D2PAK package. The STB80NF55-06T4 has a lower on-resistance (6.0 mΩ vs 6.5 mΩ), which may improve efficiency. However, the STB80NF55-08AG is automotive-grade (AEC-Q101), so if your application requires automotive qualification, verify that the STB80NF55-06T4 meets those standards.
Where can I download the STB80NF55-08AG datasheet PDF?
The STB80NF55-08AG datasheet PDF can be downloaded from the STMicroelectronics website at https://www.st.com/resource/en/datasheet/stp80nf55-08.pdf. It is also available from third-party sites like Alldatasheet and DigChip.
Where can I find the STB80NF55-08AG pinout?
The STB80NF55-08AG pinout is detailed in the official datasheet, which is available from STMicroelectronics. The D2PAK package has three pins: Gate (G), Drain (D), and Source (S), with the tab connected to the drain. Refer to the datasheet for the exact pin configuration.
Hey Google, what can replace STB80NF55-08AG?
The STB80NF55-08AG can be replaced by the STB80NF55-06T4, which is a pin-compatible drop-in replacement with a lower on-resistance. Other same-brand alternatives include the STP80NF55-08 (TO-220) and STW80NF55-08 (TO-247), but these require different PCB footprints. For cross-brand options, consider the VBL1606 from VBsemi, which is a functional equivalent, but verify pin compatibility before use.
Is STB80NF55-08AG the same as STB80NF55-06T4?
No, the STB80NF55-08AG and STB80NF55-06T4 are not the same. The STB80NF55-08AG is an automotive-grade (AEC-Q101) MOSFET with a typical on-resistance of 6.5 mΩ, while the STB80NF55-06T4 is an industrial-grade device with a lower on-resistance of 6.0 mΩ. Both are 55V, 80A N-channel MOSFETs in D2PAK packages, but they differ in qualification and on-resistance.
What are the key specifications of STB80NF55-08AG that engineers should know?
The STB80NF55-08AG is an automotive-grade N-channel Power MOSFET with a VDS of 55V, a continuous drain current of 80A at Tc, and a typical RDS(on) of 6.5 mΩ. It is housed in a D2PAK package and qualified to AEC-Q101. The device features 100% avalanche testing, low input capacitance, and low gate charge, making it suitable for high-efficiency DC-DC converters and automotive applications.
What is the best VBsemi equivalent for STB80NF55-08AG?
According to a VBsemi article, the VBL1606 is a potential equivalent for the STB80NF55-08AG. However, this is a cross-brand alternative, and you must verify pin compatibility and electrical parameters before use. The VBL1606 is designed for similar automotive and industrial applications, but always check the datasheet for exact specifications.

Engineering reference data for STB80NF55-08AG — comparison, design guidance, and compliance information.

Selection Guide

Choose the STB80NF55-08AG when you need an automotive-grade (AEC-Q101) N-channel MOSFET with a 55V rating and 80A current capability. It is ideal for automotive ECUs, battery management systems, and other applications requiring high reliability. If you do not need automotive qualification and require a lower on-resistance, the STB80NF55-06T4 is a suitable drop-in replacement with a 6.0 mΩ RDS(on). For through-hole mounting, consider the STP80NF55-08 (TO-220) or STW80NF55-08 (TO-247), but note that these require different PCB footprints. For a cross-brand alternative, the VBL1606 from VBsemi may be a functional equivalent, but verify pin compatibility and electrical parameters before use. In all cases, ensure the device's voltage and current ratings meet your application's requirements, and consider thermal management to maintain junction temperature within limits.

Comparison with Alternatives

Parameter This Product STB80NF55-06T4 STB80NF55L-06T4 STP80NF55-08 STW80NF55-08 VBL1606
Package D2PAK (TO-263) D2PAK (TO-263) - same D2PAK (TO-263) - same TO-220 - different TO-247 - different D2PAK (TO-263) - same
Brand STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics VBsemi
Drain-to-Source Voltage (VDS) 55 V 55 V 55 V 55 V 55 V [DATA_NEEDED]
Continuous Drain Current (ID) 80 A 80 A 80 A 80 A 80 A [DATA_NEEDED]
On-Resistance (RDS(on)) 6.5 mΩ typ 6.0 mΩ typ 6.0 mΩ typ 6.5 mΩ typ 6.5 mΩ typ [DATA_NEEDED]
Power Dissipation (PD) 300 W 300 W 300 W 300 W 300 W [DATA_NEEDED]
Automotive Grade AEC-Q101 qualified No No No No [DATA_NEEDED]
Technology STripFET STripFET STripFET STripFET STripFET [DATA_NEEDED]

Key Differentiators

  • Automotive-grade AEC-Q101 qualification (vs STB80NF55-06T4)
  • Low on-resistance of 6.5 mΩ (vs VBL1606)
  • STripFET process for low gate charge (vs STB80NF55L-06T4)

Design Notes

The STB80NF55-08AG has a maximum power dissipation of 300W at Tc=25°C. In a typical application with VDS=12V and ID=40A, the conduction loss is I²R = 40² × 0.0065 = 10.4W. The D2PAK package has a junction-to-case thermal resistance of approximately 0.5°C/W (typical for this package). To keep the junction temperature below 175°C, the case temperature must be kept below 175 - (10.4 × 0.5) = 169.8°C. This requires a heatsink or a large copper area on the PCB. For continuous operation at high current, ensure adequate thermal management to prevent thermal runaway.

For optimal performance, place the STB80NF55-08AG on a PCB with a large copper pour connected to the drain tab. The D2PAK package's tab is the drain terminal, so the copper area serves as a heatsink. Use multiple vias to connect the top and bottom copper layers for improved heat dissipation. Keep the gate drive trace short and direct to minimize inductance, which can cause ringing and oscillation. Place a gate resistor (typically 10Ω) close to the gate pin to dampen oscillations. Ensure the source connection is low-inductance to reduce voltage spikes during switching.

One common pitfall is exceeding the maximum gate-source voltage (VGS) rating, which is typically ±20V for this device. Use a gate driver with proper voltage clamping to prevent overvoltage. Another pitfall is inadequate gate drive voltage, which can cause the MOSFET to operate in the linear region, leading to excessive power dissipation and potential failure. Ensure the gate drive voltage is at least 10V to fully enhance the channel. Additionally, be aware of the device's avalanche energy rating; while it is 100% avalanche tested, repeated avalanche events can degrade the device. Design the circuit to minimize inductive spikes.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliant per STMicroelectronics product page. AEC-Q101 qualified for automotive applications.

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