STBV45-AP vs STBV45 Comparison

Detailed side-by-side comparison of STBV45-AP by STMicroelectronics and STBV45 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter STBV45-AP STBV45
Brand STMicroelectronics STMicroelectronics
Category Transistors Transistors
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.16 $0.31
Transistor Type NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Technology High-voltage multi-epitaxial planar, cellular emitter Multi-epitaxial planar with cellular emitter structure
Collector-Emitter Voltage (Vceo) 400 V 400 V
Collector-Base Voltage (Vcbo) [DATA_NEEDED: VCBO value] 400 V
Emitter-Base Voltage (Vebo) [DATA_NEEDED: VEBO value] [DATA_NEEDED: VEBO rating]
Continuous Collector Current (IC) 0.75 A 750 mA
Peak Collector Current [DATA_NEEDED: ICM value] —
Total Power Dissipation (Ptot) [DATA_NEEDED: Ptot at 25C] —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/typ/max] [DATA_NEEDED: minimum hFE value]
Transition Frequency (ft) [DATA_NEEDED: fT] [DATA_NEEDED: fT value]
Switching Speed Very high (fast-switching grade) —
Reverse Bias SOA Wide RBSOA per datasheet —
Package TO-92AP (Ammopack, radial leads) TO-92-3 (through-hole)
Mounting Type Through-Hole (Ammopack tape) Through Hole
Operating Temperature Range [DATA_NEEDED: Tj max] [DATA_NEEDED: junction temperature range]
RoHS Status Compliant [DATA_NEEDED: RoHS compliance status]
Power Dissipation (Pd) — 950 mW
Collector-Emitter Saturation Voltage (Vce(sat)) — [DATA_NEEDED: VCE(sat) value]
Pinout — Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard)

Datasheets & Resources

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