STBV45-AP vs STBV45 Comparación
Comparación detallada lado a lado de STBV45-AP por STMicroelectronics y STBV45 por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ ActivoSTMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ ActivoComparación de especificaciones
| Parámetro | STBV45-AP | STBV45 |
|---|---|---|
| Marca | STMicroelectronics | STMicroelectronics |
| Categoría | Transistors | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,16 | $0,31 |
| Tipo de transistor | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| Technology | High-voltage multi-epitaxial planar, cellular emitter | Multi-epitaxial planar with cellular emitter structure |
| Tensión colector-emisor (Vceo) | 400 V | 400 V |
| Tensión colector-base (Vcbo) | [DATA_NEEDED: VCBO value] | 400 V |
| Tensión emisor-base (Vebo) | [DATA_NEEDED: VEBO value] | [DATA_NEEDED: VEBO rating] |
| Continuous Collector Current (IC) | 0.75 A | 750 mA |
| Peak Collector Current | [DATA_NEEDED: ICM value] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot at 25C] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ/max] | [DATA_NEEDED: minimum hFE value] |
| Frecuencia de transición (ft) | [DATA_NEEDED: fT] | [DATA_NEEDED: fT value] |
| Switching Speed | Very high (fast-switching grade) | — |
| Reverse Bias SOA | Wide RBSOA per datasheet | — |
| Encapsulado | TO-92AP (Ammopack, radial leads) | TO-92-3 (through-hole) |
| Tipo de montaje | Through-Hole (Ammopack tape) | Through Hole |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max] | [DATA_NEEDED: junction temperature range] |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Power Dissipation (Pd) | — | 950 mW |
| Tensión de saturación colector-emisor (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) value] |
| Pinout | — | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) |