STBV45-AP vs STBV45 Vergleich
Detaillierter Direktvergleich von STBV45-AP von STMicroelectronics und STBV45 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ AktivSTMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ AktivSpezifikationsvergleich
| Parameter | STBV45-AP | STBV45 |
|---|---|---|
| Marke | STMicroelectronics | STMicroelectronics |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,16 | $0,31 |
| Transistortyp | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| Technology | High-voltage multi-epitaxial planar, cellular emitter | Multi-epitaxial planar with cellular emitter structure |
| Kollektor-Emitter-Spannung (Vceo) | 400 V | 400 V |
| Kollektor-Basis-Spannung (Vcbo) | [DATA_NEEDED: VCBO value] | 400 V |
| Emitter-Basis-Spannung (Vebo) | [DATA_NEEDED: VEBO value] | [DATA_NEEDED: VEBO rating] |
| Continuous Collector Current (IC) | 0.75 A | 750 mA |
| Peak Collector Current | [DATA_NEEDED: ICM value] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot at 25C] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ/max] | [DATA_NEEDED: minimum hFE value] |
| Übergangsfrequenz (ft) | [DATA_NEEDED: fT] | [DATA_NEEDED: fT value] |
| Switching Speed | Very high (fast-switching grade) | — |
| Reverse Bias SOA | Wide RBSOA per datasheet | — |
| Gehäuse | TO-92AP (Ammopack, radial leads) | TO-92-3 (through-hole) |
| Montageart | Through-Hole (Ammopack tape) | Through Hole |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max] | [DATA_NEEDED: junction temperature range] |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Power Dissipation (Pd) | — | 950 mW |
| Kollektor-Emitter-Sättigungsspannung (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) value] |
| Pinout | — | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) |