STL140N4F7AG vs IRFH7084TRPBF Comparison

Detailed side-by-side comparison of STL140N4F7AG by STMicroelectronics and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

STMicroelectronics
STL140N4F7AG STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG - 40V N-Channel Power MOSFET | STMicroelectronics

STL140N4F7AG ✓ Active

Specification Comparison

Parameter STL140N4F7AG IRFH7084TRPBF
Brand STMicroelectronics Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.45
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 140 A —
On-State Resistance (RDS(on)) 3.2 mOhm @ VGS=10V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V (min) —
Total Gate Charge (Qg) 60 nC —
Input Capacitance (Ciss) 4500 pF —
Output Capacitance (Coss) 800 pF —
Reverse Transfer Capacitance (Crss) 150 pF —
Power Dissipation (PD) 150 W —
Operating Temperature Range -55°C to +175°C -55°C to +175°C (TJ)
Package PowerFLAT 5x6 8-PQFN 5x6 mm (SuperSO8)
Mounting Type Surface Mount Surface Mount
AEC-Q101 Qualified Yes —
RoHS Compliant Yes —
FET Type — N-Channel
Technology — StrongIRFET™ (trench MOSFET)
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
MSL Level — 1
RoHS Status — Compliant
Halogen Free — Compliant
RthJC max — 0.96 °C/W (per datasheet)

Datasheets & Resources

Browse All Products Create BOM Request Quote