IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon
MPN: IRFH7084TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.87 | $0.87 |
| 10 | $0.78 | $7.80 |
| 100 | $0.68 | $68.00 |
| 500 | $0.59 | $295.00 |
| 1,000 | $0.52 | $520.00 |
| 3,000 | $0.45 | $1,350.00 |
Drop-in alternatives for IRFH7084TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFH7084TRPBF-Q1
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH8318TRPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IRFR4615TRLPBF
✅ Drop-In✓ In Stock
$0.39 / Unit
View Datasheet →STL210N4F7AG
✅ Drop-In📋 Reference alternative (not in catalog)
STL140N4F7AG
✅ Drop-In✓ In Stock
$0.95 / Unit
View Datasheet →STLD200N4F6AG
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH7084TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | StrongIRFET™ (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | 100 A |
| Silicon-Limited Drain Current | 265 A |
| Power Dissipation (PD, Tc=25°C) | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage VGS(th) typ | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | 6560 pF |
| Operating Temperature Range | -55°C to +175°C (TJ) |
| Package | 8-PQFN 5x6 mm (SuperSO8) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Halogen Free | Compliant |
| RthJC max | 0.96 °C/W (per datasheet) |
IRFH7084TRPBF Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source (sense / Kelvin source recommended) |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin PAD | D — Drain (exposed thermal pad on underside of package) |
IRFH7084TRPBF Safe Operating Area (DC, Tc=25°C, VGS=10V)
Typical Applications
IRFH7084TRPBF is suitable for 6 applications: 12V Synchronous Rectifier in Isolated DC/DC Converters, High-Current Point-of-Load (POL) Buck Stage, Motor-Drive H-Bridge for 12-24 V BLDC/PMSM Motors, Hot-Swap and OR-ing Controller Pass-FET, Battery-Protection and Load Switch in Multi-Cell Packs, Class-D Audio Amplifier Output Stage.
12V Synchronous Rectifier in Isolated DC/DC Converters
The IRFH7084TRPBF excels as the secondary-side synchronous rectifier in 12 V isolated bus converters because its 1.25 mΩ max RDS(on) at VGS = 10 V minimises conduction loss on the high-current output path. With a 100 A package-limited continuous drain current (265 A silicon-limited), it easily handles the 30-60 A typical for telecom and server 12 V POL stages. The 6560 pF input capacitance at 25V keeps gate-drive losses manageable at 200-500 kHz switching frequencies. Designers place it on the low-side of the secondary full-bridge, with the gate driven from an isolated gate-drive transformer or digital isolator with >10 V swing. Unlike a Schottky diode it is a controllable synchronous switch, eliminating the diode forward drop and significantly boosting efficiency at heavy load.
Recommended
High-Current Point-of-Load (POL) Buck Stage
In a 12 V-to-1.x V buck POL converter for FPGAs, ASICs or server processors, the IRFH7084TRPBF serves as the low-side (synchronous) FET in a paired half-bridge. Its very low 1.25 mΩ max RDS(on) keeps the I²R conduction loss small even at 50-80 A load current. The strong dV/dt ruggedness rating makes it tolerant of the 12 V bus transients that often occur in hot-plug events. The 5x6 PQFN footprint allows tight cell pitch in a multi-phase VR layout. Designers bias the gate at 10 V from a dedicated bootstrap or LDO rail; 6 V drive is insufficient and would significantly raise effective RDS(on). This application is typical in enterprise SSD, GPU card and AI accelerator boards requiring 60-100 A continuous rail current.
Recommended
Motor-Drive H-Bridge for 12-24 V BLDC/PMSM Motors
The IRFH7084TRPBF is well-suited to the four-FET H-bridge driving 12-24 V brushless DC or PMSM motors in drones, e-bikes, robotics and small industrial drives. With 100 A continuous drain current and 265 A silicon-limited pulse current, it handles motor inrush and commutation spikes comfortably. Its StrongIRFET™ trench construction offers improved avalanche ruggedness, important when the motor's inductive kickback exceeds VDS during PWM switching. The 5x6 PQFN allows a compact four-FET layout with very short high-current loops, reducing parasitic inductance that would otherwise cause drain overshoot. Designers pair it with a half-bridge gate driver such as the IRS2302STRPBF or IR2114SSTRPBF and add 10 kΩ gate-source pull-downs for safe start-up.
Recommended
Hot-Swap and OR-ing Controller Pass-FET
In server and telecom -48 V to 12 V (or 12 V redundant) power-path OR-ing applications, the IRFH7084TRPBF acts as the low-side pass-FET or reverse-current blocking switch. The 40 V VDS rating easily exceeds the 12 V nominal rail, with ample headroom for inductive transients and hot-plug surges. RDS(on) of 1.25 mΩ at 100 A yields only ~10 W of conduction loss at 100 A - manageable with a copper pour and minimal airflow. The part's avalanche rating absorbs the energy stored in PCB trace inductance when the FET is suddenly commanded on into a shorted load. Designers often pair it with a hot-swap controller IC and a gate-source pull-down resistor of 10-100 kΩ for failsafe off.
Recommended
Battery-Protection and Load Switch in Multi-Cell Packs
For 4S-10S lithium battery packs (12-36 V nominal), the IRFH7084TRPBF functions as the high-side or low-side battery-protection FET, disconnecting the pack from the load on over-current, over-voltage or overtemperature events. The 40 V VDS rating covers a fully-charged 10S pack, while the very low RDS(on) preserves battery runtime by minimising quiescent conduction loss during normal discharge. The 100 A continuous rating supports high-power e-mobility and power-tool applications. Designers typically add a TVS or Zener across drain-source to clamp inductive transients from the wiring harness. The 5x6 PQFN footprint is much smaller than legacy DPAK protection FETs, enabling more compact BMS PCB layouts.
Recommended
Class-D Audio Amplifier Output Stage
The IRFH7084TRPBF serves as the output-stage FET pair in 12 V class-D audio amplifiers, where the half-bridge switches the LC output filter at 250-500 kHz. Its 1.25 mΩ max RDS(on) and 100 A continuous current allow amplifiers delivering 200-500 W into 4 Ω without overheating. The StrongIRFET™ family is designed for fast switching with low body-diode reverse-recovery charge, which minimises dead-time distortion - critical for audio THD performance. Designers select this FET for subwoofer plate amps, automotive Class-D head units and pro-audio rack amplifiers. The 5x6 PQFN footprint keeps the power stage compact and thermally efficient when soldered to a copper pour.
Recommended
Recommended Products Summary
Engineering reference data for IRFH7084TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH7084TRPBF-Q1 | IRFH8318TRPBF | STL210N4F7AG | STL140N4F7AG | STLD200N4F6AG |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Package | 8-PQFN 5x6 (SuperSO8) | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same | 8-PQFN 5x6 (SuperSO8) - same |
| VDS max (V) | 40 | 40 | 30 | 40 | 40 | 40 |
| ID continuous (A, Tc=25°C, package-limited) | 100 | 100 | 120 | 120 | 80 | 120 |
| RDS(on) max @ VGS=10V (mΩ) | 1.25 | 1.25 | 1.4 | 2.4 | 3.4 | 2.0 |
| Power Dissipation (W) | 156 | 156 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualified (AEC-Q101) | No (industrial) | Yes | No | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
| Technology / Family | StrongIRFET™ (Infineon) | StrongIRFET™ | StrongIRFET™ | STripFET F7 | STripFET F7 | STripFET F6 |
Key Differentiators
- Lowest RDS(on) in the 5x6 PQFN 40 V class from a major brand (vs STL210N4F7AG)
- Automotive-qualified drop-in variant available (vs IRFH7084TRPBF-Q1)
- Higher continuous current rating than comparable 40 V parts (vs STL140N4F7AG)
Design Notes
Estimated: at continuous ID = 50 A and RDS(on) = 1.25 mΩ, conduction loss is I²R = 50² × 0.00125 = 3.13 W. With RthJA ~ 50 °C/W on a 1 sq.in. copper pour on a 2-layer board, junction temperature rise ≈ 3.13 × 50 = 156 °C above ambient. To stay within 125 °C TJ at 25 °C ambient, keep continuous load ≤ 30 A on a modest copper pour, or expand to >2 sq.in. plus airflow for higher currents. Always verify against the datasheet SOA curves (Diagram 2).
The 8-PQFN 5x6 package requires the drain thermal pad to be soldered to a continuous copper pour on the top layer, with at least 8 thermal vias (0.3 mm drill, 0.6 mm pad) connecting to inner-layer copper. Keep the high-di/dt loop (input cap → high-side FET drain → low-side FET source → GND) tight and minimise loop area to suppress drain-voltage overshoot. Route the gate trace away from the drain copper and add a 10 kΩ gate-source resistor close to the IC pins to prevent false turn-on from Miller coupling.
Use a Kelvin-source connection by tying pin 4 (source-sense) directly to the source copper near the die, separate from the high-current source pins 5-8. This eliminates the source-inductance voltage drop from the gate-drive loop and prevents Rds-on degradation at high di/dt. Place the gate-driver IC within 5 mm of the gate pin to keep the gate-loop inductance below 5 nH.
Driving the IRFH7084 with VGS = 6 V instead of 10 V roughly triples the effective RDS(on), often surprising designers who see much higher conduction loss than expected. Always confirm gate-drive voltage under full load (accounting for bootstrap-cap droop). Also: do not exceed the ±20 V VGS absolute maximum - transient ringing on the gate trace must be clamped with a TVS or 5.6 V Zener if long gate traces are unavoidable.
At switching frequencies above 500 kHz, the gate-charge Qg of this StrongIRFET (~80 nC typical) drives significant gate-driver loss (Pgate = Qg × Vdrive × fsw). At 1 MHz the gate-drive loss alone can exceed 80 mW per FET. Plan thermal headroom accordingly, and consider a dedicated gate-drive LDO rather than sharing the controller's VCC rail.
Compliance Information
RoHS and halogen-free compliant per GlobalSpec datasheet. Industrial-grade (non-automotive); for AEC-Q101 automotive qualification use IRFH7084TRPBF-Q1. Estimated EOL 2027 per GlobalSpec introduction/EOL records.
