TLP182GB-TPL.E(T vs TLP183(GB-TPL Comparison

Detailed side-by-side comparison of TLP182GB-TPL.E(T by Toshiba and TLP183(GB-TPL by Toshiba. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter TLP182GB-TPL.E(T TLP183(GB-TPL
Brand Toshiba Toshiba
Category Optocouplers Optocouplers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.29 $0.12
Part Number TLP182GB-TPL.E(T —
Package 4-Lead SO6 (SMD) 6-SO (SO6, 4-pin functional)
Isolation Voltage 3750 Vrms 3750 Vrms
Input Type AC (dual antiparallel LEDs) DC (InGaAs Infrared LED)
Output Type Phototransistor (NPN) Phototransistor (BJT)
Number of Channels 1 1
Collector-Emitter Voltage (Vceo) 80 V 80 V max
Collector Current (Ic) 50 mA 50 mA max
Current Transfer Ratio (CTR) 50% min @ IF=5 mA, VCE=5 V —
Collector-Emitter Saturation Voltage (VCEsat) 300 mV @ IC=2.4 mA, IF=8 mA —
Turn-On Time (ton) 2 us —
Turn-Off Time (toff) 3 us —
Operating Temperature Range -55 degC to +125 degC —
Input Forward Current (IF) 50 mA max —
Input Reverse Voltage (VR) 5 V —
Power Dissipation (PC) 200 mW —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Manufacturer — Toshiba Semiconductor and Storage
Product Type — Phototransistor Output Optocoupler
Forward Current (IF) — 50 mA max
Reverse Voltage (VR) — 6 V max
Forward Voltage (VF) — 1.25 V typ at IF=10 mA
Emitter-Collector Voltage (VECO) — 7 V max
CTR (Current Transfer Ratio) — 50% min (IF=5 mA, VCE=5 V) - GB rank
Operating Temperature — -55 C to +125 C
Storage Temperature — -55 C to +150 C
CTR Rank — GB (50-600% range)
Rise Time (tr) — 5 us typ
Fall Time (tf) — 5 us typ
Tape and Reel Packaging — TPL (L direction, 3000 pcs/reel)
Packing Option Code — E (RoHS)

Datasheets & Resources

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