UCC21521DWR vs UCC21550Q-Q1 Comparison

Detailed side-by-side comparison of UCC21521DWR by Texas Instruments and UCC21550Q-Q1 by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ Active
Texas Instruments
UCC21550Q-Q1 UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI

UCC21550Q-Q1 ✓ Active

Specification Comparison

Parameter UCC21521DWR UCC21550Q-Q1
Brand Texas Instruments Texas Instruments
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.15 $2.10
Channel Count 2 —
Peak Source Current 4 A 4 A
Peak Sink Current 6 A 6 A
Isolation Rating 5700 Vrms 5000 Vrms (reinforced)
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling Capacitive coupling
Input Threshold TTL and CMOS compatible (3.3 V logic) —
Enable / Disable Pin Yes (DIS) —
Operating Temperature -40C to +125C -40C to +150C
Package SOIC-16 (DW) 16-SOIC (DW)
Mounting Type Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge Dual low-side, dual high-side, or half-bridge
RoHS Status Compliant Compliant
Product Type — Reinforced isolated dual-channel gate driver
Number of Channels — 2
Programmable Dead Time — Yes (single resistor)
Target Transistors — Power MOSFET, SiC, GaN, IGBT
Automotive Qualification — AEC-Q100 qualified (Q1)
Disable Function — Yes
Supply Voltage — [DATA_NEEDED: VDD range]

Datasheets & Resources

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