UCC21521DWR vs UCC21550Q-Q1 Сравнение
Подробное сравнение бок о бок UCC21521DWR от Texas Instruments и UCC21550Q-Q1 от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | UCC21521DWR | UCC21550Q-Q1 |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,15 | $2,10 |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | 5000 Vrms (reinforced) |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | Capacitive coupling |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| Рабочая температура | -40C to +125C | -40C to +150C |
| Корпус | SOIC-16 (DW) | 16-SOIC (DW) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | Dual low-side, dual high-side, or half-bridge |
| Статус RoHS | Compliant | Compliant |
| Product Type | — | Reinforced isolated dual-channel gate driver |
| Number of Channels | — | 2 |
| Programmable Dead Time | — | Yes (single resistor) |
| Target Transistors | — | Power MOSFET, SiC, GaN, IGBT |
| Automotive Qualification | — | AEC-Q100 qualified (Q1) |
| Disable Function | — | Yes |
| Напряжение питания | — | [DATA_NEEDED: VDD range] |