UCC21540QDWKRQ1 vs UCC21540 Comparison
Detailed side-by-side comparison of UCC21540QDWKRQ1 by Texas Instruments and UCC21540 by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments
UCC21540QDWKRQ1 ✓ ActiveTexas Instruments
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
UCC21540 ✓ ActiveSpecification Comparison
| Parameter | UCC21540QDWKRQ1 | UCC21540 |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.21 | $1.85 |
| Number of Channels | 2 | 2 |
| Isolation Type | Reinforced, capacitive coupling | Reinforced / galvanic |
| Isolation Voltage | 5700 VRMS | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Channel-to-Channel Spacing | 3.3 mm minimum (DWK package) | — |
| Dead Time | Programmable (external resistor) | — |
| Target Transistors | Power MOSFET, IGBT, GaN | — |
| Configuration Options | Dual low-side, dual high-side, or half-bridge | — |
| UVLO | 8 V (secondary side) | — |
| Automotive Qualification | AEC-Q100 | — |
| Package | 14-SOIC (DWK) | SOIC-16 (DW); DWK with 3.3-mm channel spacing |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | Wide temperature range (automotive) | [DATA_NEEDED: operating temperature range] |
| RoHS Status | Compliant | Compliant |
| Output Current (Peak Source) | — | 4 A |
| Output Current (Peak Sink) | — | 6 A |
| Isolation Rating | — | 5.7 kVRMS (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| Secondary-Side UVLO | — | 8 V |
| Output-Side Supply Range (VDD) | — | 6.5 V to 18 V |
| Programmable Deadtime | — | Yes (DT pin) |
| Disable Pin | — | Yes (DIS) |
| Driven Devices | — | Power MOSFET, IGBT, GaN transistor |
| Channel-to-Channel Spacing (DWK) | — | 3.3 mm |