UCC21540QDWKRQ1 vs UCC21540 Vergleich
Detaillierter Direktvergleich von UCC21540QDWKRQ1 von Texas Instruments und UCC21540 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments
UCC21540QDWKRQ1 ✓ AktivTexas Instruments
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
UCC21540 ✓ AktivSpezifikationsvergleich
| Parameter | UCC21540QDWKRQ1 | UCC21540 |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,21 | $1,85 |
| Number of Channels | 2 | 2 |
| Isolation Type | Reinforced, capacitive coupling | Reinforced / galvanic |
| Isolation Voltage | 5700 VRMS | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Channel-to-Channel Spacing | 3.3 mm minimum (DWK package) | — |
| Dead Time | Programmable (external resistor) | — |
| Target Transistors | Power MOSFET, IGBT, GaN | — |
| Configuration Options | Dual low-side, dual high-side, or half-bridge | — |
| UVLO | 8 V (secondary side) | — |
| Automotive Qualification | AEC-Q100 | — |
| Gehäuse | 14-SOIC (DWK) | SOIC-16 (DW); DWK with 3.3-mm channel spacing |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | Wide temperature range (automotive) | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | Compliant | Compliant |
| Output Current (Peak Source) | — | 4 A |
| Output Current (Peak Sink) | — | 6 A |
| Isolation Rating | — | 5.7 kVRMS (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| Secondary-Side UVLO | — | 8 V |
| Output-Side Supply Range (VDD) | — | 6.5 V to 18 V |
| Programmable Deadtime | — | Yes (DT pin) |
| Disable Pin | — | Yes (DIS) |
| Driven Devices | — | Power MOSFET, IGBT, GaN transistor |
| Channel-to-Channel Spacing (DWK) | — | 3.3 mm |