UCC21540QDWKRQ1 vs UCC21540 Comparação
Comparação detalhada lado a lado de UCC21540QDWKRQ1 por Texas Instruments e UCC21540 por Texas Instruments. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Texas Instruments
UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments
UCC21540QDWKRQ1 ✓ AtivoTexas Instruments
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
UCC21540 ✓ AtivoComparação de especificações
| Parâmetro | UCC21540QDWKRQ1 | UCC21540 |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,21 | $1,85 |
| Number of Channels | 2 | 2 |
| Isolation Type | Reinforced, capacitive coupling | Reinforced / galvanic |
| Isolation Voltage | 5700 VRMS | — |
| Peak Source Current | 4 A | — |
| Peak Sink Current | 6 A | — |
| Channel-to-Channel Spacing | 3.3 mm minimum (DWK package) | — |
| Dead Time | Programmable (external resistor) | — |
| Target Transistors | Power MOSFET, IGBT, GaN | — |
| Configuration Options | Dual low-side, dual high-side, or half-bridge | — |
| UVLO | 8 V (secondary side) | — |
| Automotive Qualification | AEC-Q100 | — |
| Encapsulamento | 14-SOIC (DWK) | SOIC-16 (DW); DWK with 3.3-mm channel spacing |
| Tipo de montagem | Surface Mount | Surface Mount |
| Temperatura de operação | Wide temperature range (automotive) | [DATA_NEEDED: operating temperature range] |
| Status RoHS | Compliant | Compliant |
| Output Current (Peak Source) | — | 4 A |
| Output Current (Peak Sink) | — | 6 A |
| Isolation Rating | — | 5.7 kVRMS (reinforced) |
| Isolation Technology | — | Capacitive coupling |
| Secondary-Side UVLO | — | 8 V |
| Output-Side Supply Range (VDD) | — | 6.5 V to 18 V |
| Programmable Deadtime | — | Yes (DT pin) |
| Disable Pin | — | Yes (DIS) |
| Driven Devices | — | Power MOSFET, IGBT, GaN transistor |
| Channel-to-Channel Spacing (DWK) | — | 3.3 mm |