Diskrete Halbleiter
Unterkategorien
Produkte (1814)
MRF8P20161HSR3 - 37W 1880-2025MHz RF Power MOSFET | NXP
The NXP (formerly Freescale) MRF8P20161HSR3 is a single W-CDMA lateral N-channel RF power MOSFET designed for cellular base station applications covering 1880 MHz to 2025 MHz with 37 W average output power at 28 V supply. Housed in an NI-780S-4 (NI-780HS-4) ceramic-air-cavity package, this RF MOSFET delivers 16.4 dB gain at 1.92 GHz and supports Class AB and Class C operation across all standard cellular base station modulation formats including W-CDMA, LTE, and multi-carrier GSM. An RF power MOSFET (Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor) is a discrete transistor optimized for high-frequency power amplification in the megahertz-to-gigahertz range. Within the broader semiconductor taxonomy, this device sits in the hierarchy: RF MOSFET -> RF power transistor -> discrete semiconductor -> power amplifier building block. The 'lateral' N-channel architecture uses current flow parallel to the silicon surface, which is the preferred geometry for GHz-range power devices because it minimizes parasitic capacitances and enables high breakdown voltage in a compact die. Key specifications include a 28 V drain supply, 550 mA quiescent drain current (Idq), 16.4 dB small-signal gain at 1.92 GHz, and a surface-mount ceramic package rated for the thermal demands of continuous base-station duty. The device's high gain and broadband matching network tolerance reduce the bill of materials in the RF chain by minimizing driver-stage gain requirements. Lateral MOSFET construction also provides excellent thermal stability under W-CDMA envelope modulation where peak-to-average ratios approach 10 dB. Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers, repeaters and boosters operating in the 1880-2025 MHz bands, digital pre-distortion (DPD) feedback loops, and aerospace or defense RF transmitter subassemblies. The 28 V supply rail and 37 W average power place this part firmly in the macro-cell base station class where Doherty PA topologies and high-efficiency envelope tracking are common. When designing with this part, designers must observe proper RF load-pull matching, adequate base-plate cooling, and 50-ohm system impedance at the package reference plane. The ceramic NI-780S-4 package requires screw-down mounting with proper torque to maintain the thermal and electrical ground path - improper mounting rapidly degrades output power and reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet for engineers sourcing RF power transistors for cellular infrastructure.
MRF8P20165WHSR5 - 165W RF Power LDMOS | NXP | Base Station
The NXP Semiconductors MRF8P20165WHSR5 is a single W-CDMA lateral N-channel RF power MOSFET designed for base station applications requiring wide instantaneous bandwidth across 1880 to 2025 MHz. The device delivers 37 W average output power and is rated for 165 W peak power, housed in the NI-780S-4 ceramic package with tape-and-reel packaging. It operates from a 28 V supply rail, drawing 550 mA under test conditions and delivering 14.8 dB gain at the operating frequency point. An RF power LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) transistor is a type of power MOSFET specifically engineered for high-frequency, high-power amplification. LDMOS devices occupy the power amplifier (PA) niche in the RF signal chain, sitting between the driver stage and the antenna in cellular base stations, broadcast transmitters, and industrial RF generators. They are valued for high breakdown voltage, excellent thermal performance, and high gain/density at RF frequencies. Key features of the MRF8P20165WHSR5 include its dual-channel LDMOS architecture (FET RF 2CH), 65 V drain-source voltage rating, and operation across 1.98 GHz to 2.01 GHz (test point) with usable bandwidth from 1.88 GHz to 2.025 GHz. The device achieves 14.8 dB gain at 28 V Vdd test conditions, providing sufficient drive margin for Doherty amplifier topologies. The NI-780S ceramic flange package offers a low thermal-resistance path to the system heatsink, essential for sustained CW and W-CDMA operation at full rated output. Technically, the MRF8P20165WHSR5 uses NXP's HV8 LDMOS process generation, which optimizes the trade-off between breakdown voltage, output capacitance, and ruggedness under mismatch. The W-CDMA specification (peak-to-average ratio of approximately 9.5 dB at 0.01% CCDF) drives the design toward high peak power capability with thermal capacity to absorb the resulting average dissipation. Two parallel transistor sections on a single die provide the 165 W peak envelope capability required for 3G base station lineups. Typical applications include W-CDMA, LTE, and multi-carrier GSM base station power amplifiers in the 1880-2025 MHz band, covering DCS-1800, PCS-1900, and UMTS-2000 allocations. The device is also deployed in RF signal generators and industrial heating systems. Designers typically configure it in a Doherty amplifier for high-efficiency operation, with driver-stage predistortion to linearize the W-CDMA envelope. When designing with this part, pay close attention to lead-to-flange flatness for proper heatsink mating, and follow NXP's application notes on input/output matching network topology for the 1.88-2.025 GHz band. The discontinued lifecycle status means designers should verify last-time-buy inventory and consider the R3 (larger reel) variant MRF8P20165WHSR3 as a drop-in substitute. This page synthesizes distributor pricing, same-brand drop-in alternatives (MRF8P20165WHR3, MRF8P20165WHSR3, AFT18S230SR5), and practical design notes that go beyond the manufacturer datasheet's typical-application circuit.
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
The NXP MRF8P23080HSR3 (originally Freescale Semiconductor) is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA and LTE base-station power amplifiers operating from 2300 MHz to 2620 MHz. Housed in an NI-780S-4L air-cavity ceramic package, the device is rated at 28 V drain bias, delivers 16 W average output power with a typical gain of 14.6 dB at 2.3 GHz, and is intended for Class AB and Class C amplifier topologies across cellular base-station modulation formats. A Radio Frequency Power MOSFET (RF Power MOSFET) is a discrete transistor specifically engineered to amplify high-frequency signals at power levels far beyond what small-signal RF transistors can deliver. Architecturally it sits within the broader taxonomy: MOSFET -> power MOSFET -> RF power transistor -> base-station PAs; it is the workhorse of macro-cell transmitter chains where linearity, gain and ruggedness determine link capacity. Key electrical features include a 65 V drain-source breakdown rating, a quiescent bias of 280 mA at 28 V for gain and linearity optimisation, 14.6 dB typical power gain at 2.3 GHz, and operation across the 2300-2400 MHz band with extension to 2620 MHz. The device is supplied in the NI-780S-4L industry-standard air-cavity ceramic package with a flange-mount flange for direct bolting to a heatsink or pallet. Lead-free and RoHS-compliant terminations are standard. Internally the MRF8P23080HSR3 uses NXP's high-voltage laterally-diffused metal-oxide-semiconductor (LDMOS, dual) process, which combines a low on-resistance with high breakdown voltage and excellent gain at 2.3 GHz. The same die is offered as MRF8P23080HR3 in the NI-780H-4L bolt-down variant, allowing designers to switch packages without re-tuning the RF match. Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station Doherty final stages, S-band pulsed radar transmitters, and high-power driver stages feeding a larger final-stage LDMOS pallet. The part is recommended for linear Doherty single-carrier W-CDMA service where the average power is pushed toward P3dB compression under PAR-reduced waveforms. Designers should select output-matching networks that present the optimum load-line at 2300-2400 MHz while keeping harmonic terminations short to ground, and must provide adequate bolt-down torque on the NI-780S-4L flange to keep the thermal resistance (Rthjc) within the datasheet envelope. This page consolidates distributor pricing, pin-equivalent same-brand variants, and Doherty amplifier design considerations not aggregated on a single manufacturer or distributor page.
MRF8P23080HSR5 - 80W RF MOSFET 2.3GHz W-CDMA/LTE | NXP
The NXP MRF8P23080HSR5 is a single W-CDMA and LTE lateral N-Channel RF power MOSFET designed for operation across the 2300-2400 MHz band, delivering 16 W average output power and 80 W peak, housed in the NI-780S-4L air-cavity ceramic package. It is engineered for base-station and small-cell RF power amplifier applications in the wireless-infrastructure market where high efficiency and rugged linearity are required. An RF power MOSFET is a specialised discrete semiconductor that converts DC supply energy into a high-frequency RF output signal with gain and acceptable linearity. The MRF8P23080HSR5 belongs to the lateral N-Channel MOSFET family, optimised so that the carrier transit path sits parallel to the silicon surface, which minimises parasitic capacitances and improves high-frequency gain and efficiency compared with vertical-diffusion MOSFETs. It sits within the broader HV8 generation of NXP Airfast RF power devices. Key features include 14.6 dB typical power gain, 50 V drain-to-source breakdown support with the recommended 28 V nominal operating drain supply, and operation from 2300 to 2400 MHz. The device is biased at low quiescent current for Class AB operation and is rated for W-CDMA and LTE downlink waveforms where high peak-to-average ratios must be handled without excessive gain compression. The device uses NXP's seventh-generation Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology, which delivers high gain, high drain efficiency, and excellent thermal performance. The Airfast NI-780S-4L package provides a low-inductance copper-flanged ceramic body that simplifies PCB-to-flange mounting and improves thermal transfer to the system heatsink, while the internally matched input simplifies driver-stage design. Typical applications include 4G LTE and W-CDMA base-station power amplifiers, small-cell and femtocell transmitters, and repeater/boosted-coverage infrastructure. It is also used in military and industrial RF amplifier modules that require broadband efficiency above 2 GHz. When integrating this MOSFET, ensure that the drain supply rail incorporates proper RF decoupling and that the PCB thermal path provides a low thermal-resistance mounting interface to a heatsink or cold-plate. Designers should also bias the gate with a regulated negative or positive bias network that prevents thermal runaway and preserves the device's safe operating area. This page synthesises distributor pricing, drop-in alternative guidance and practical thermal and layout notes that complement the manufacturer datasheet and accelerate part selection for 2.3-2.4 GHz RF power designs.
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
The NXP MRF8P26080HSR3 is a single W-CDMA and LTE lateral N-channel RF power MOSFET rated for 14 W average output power across the 2500–2700 MHz band with a 28 V supply rail. Housed in an NI-780S-4 ceramic package, the device is built on NXP's 8th-generation (Gen8) high-voltage LDMOS process and is targeted at cellular base-station final-stage and driver amplifier applications. It delivers 80 W peak CW power capability and supports both Class AB and Class C operation, making it suitable for Doherty, push-pull, and single-ended amplifier topologies. Gen8 N-channel enhancement-mode lateral MOSFETs represent the leading edge of silicon RF power technology, sitting above Gen6/Gen7 parts in efficiency and bandwidth for cellular infrastructure. Within the cellular base-station RF signal chain, this device sits between the transceiver exciter (where small-signal LDMOS or GaAs devices operate) and the antenna feed network, delivering the high-power RF energy that ultimately reaches the antenna element. Its lateral geometry provides stable gain, excellent thermal performance, and consistent large-signal behavior when used in Doherty amplifier configurations that dominate modern 4G LTE and 5G NR radios. Key features include 14 W average output power at 2.6 GHz, 80 W peak envelope power for high-PAR signals, and a wide operating bandwidth that covers the entire 2.5–2.7 GHz LTE band. The device is characterized in a typical Doherty single-carrier W-CDMA test fixture, simplifying reference designs. The NI-780S-4 ceramic air-cavity package offers a low-inductance flange-mount footprint with gold-plated leads and excellent heat dissipation through the package base. Technically, the MRF8P26080HSR3 uses lateral N-channel LDMOS architecture on the Gen8 process, which trades absolute RF power density for superior efficiency, gain, and ruggedness versus older silicon technologies. It offers high drain efficiency when used in Doherty peaking/peak amplifier configuration, and the device is also robust enough for many commercial pulsed avionics and tactical-radio front-end designs. Typical applications include W-CDMA and LTE cellular base stations using Doherty or single-ended PA topologies, 2.5–2.7 GHz 4G LTE small-cell and micro-cell power amplifiers, 5G NR (band n41, n38, n40) high-power driver amplifiers, TDD transmitter final stages, RF-link and tactical-radio power amplifiers in commercial and industrial systems, and industrial-scientific RF heating applications operating in the 2.45–2.7 GHz ISM band. When designing with this part, pay close attention to PCB material selection (low-loss Rogers RO4350 or similar recommended), thermal mounting torque sequence per NXP application notes, and DC bias sequencing. Use a regulated 28 V supply with proper in-rush current limiting and gate-bias network per the reference design to prevent parametric drift. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical thermal/RF design notes not consolidated in the manufacturer datasheet.
MRF8P9040NR1 - 40W 960MHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF8P9040NR1 is a 40 W average, 728-960 MHz lateral N-channel enhancement-mode RF power MOSFET designed for cellular base-station power amplifiers. Housed in an air-cavity TO-272 WB-4 (overmold plastic variant) package, it operates from a 28 V DC supply and delivers 19.1 dB gain at 960 MHz with CW and modulated (CDMA, W-CDMA, LTE) drive, with a typical P1dB of roughly 4 W average power. A lateral N-channel enhancement-mode RF power MOSFET is a transistor whose conducting channel is formed at the surface of a silicon die and whose carrier concentration is increased by applying a positive gate-to-source voltage. This structure gives RF designers a high-frequency, high-power gain block that scales linearly when driven in Class AB and is rugged enough for Class C cellular modulation formats. RF power MOSFETs belong to the broader discrete-semiconductor hierarchy: MOSFET -> power MOSFET -> RF power MOSFET -> base-station PA transistor -> semiconductor device. Key features include broadband 728-960 MHz coverage in a single part, 28 V supply operation that simplifies gate-bias design, integrated ESD protection, high peak-to-average ratio tolerance suited to LTE multi-carrier signals, and an air-cavity ceramic-style package (overmolded WB-4) that provides a low thermal-resistance path from die to heatsink. The lateral architecture supports high gain (19.1 dB at 960 MHz) without sacrificing ruggedness against load VSWR mismatch. The die uses NXP's HV8 lateral MOSFET process technology, optimized for cellular infrastructure PA stages. The drain is on the package flange for direct bolt-down heatsinking; the gate and source are wire-bonded through the package leads. The internal matching networks at the input and output of the reference design simplify board-level integration into Doherty or single-ended PA lineups. Typical applications include 700-1000 MHz cellular base-station PAs, CDMA/W-CDMA/LTE driver and final stages, repeaters, and broadband industrial/scientific RF power amplifiers. Designers use it as the final-stage transistor in macro base stations or as a driver for higher-power MRF8PxxxNR1 siblings in multi-way Doherty configurations. When designing with this part, mount the flange directly to a copper or aluminum spreader with proper thermal compound. Maintain drain-supply decoupling close to the lead, and bias the gate from a sequenced voltage control set that ramps drain first, then gate, to avoid device stress. This page synthesizes real distributor pricing, drop-in pin-compatible alternatives, and practical PA design notes not collected in the manufacturer datasheet, helping RF engineers evaluate and source the part quickly.
MRF8S18120HR3 - 1.8GHz 72W CW LDMOS RF Power Transistor | NXP
The NXP MRF8S18120HR3 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for GSM and GSM EDGE cellular base station power amplifiers operating from 1805 to 1880 MHz, delivering 72 W CW output power at 28 V in a 3-pin NI-780H ceramic package. An RF power LDMOS transistor is a specialized MOSFET fabricated with a laterally-diffused drain structure on a silicon die, optimized for high-frequency, high-power RF amplification. LDMOS technology forms part of the broader RF power semiconductor hierarchy (LDMOS -> RF power MOSFET -> RF power transistor -> discrete semiconductor) and dominates cellular base station PA stages because of its high drain efficiency, broadband gain, and ruggedness into high VSWR loads. Key electrical characteristics include a frequency range of 1805-1880 MHz, 18.2 dB typical power gain at 1.81 GHz, 72 W CW output power capability, a 28 V typical operating drain voltage, and a 65 V drain-source breakdown rating. The part is specified for class AB and class C operation across standard cellular modulation formats and is designed with internal matching to simplify PCB layout. Test conditions in the datasheet use 800 mA quiescent current and 28 V Vdd. The MRF8S18120HR3 uses NXP's eighth-generation HV8 LDMOS process, which improves thermal performance versus earlier LDMOS generations and enables higher power density at 1.8 GHz. Its NI-780H ceramic package provides low thermal resistance and is optimized for high-volume, flangeless PCB mounting with screw-down heatsinking. Typical applications include GSM and GSM EDGE macro base station final-stage PAs, micro/pico base station RF power stages, and 1.8 GHz-band industrial RF power amplifiers requiring high gain and rugged operation. Designers should bias the device in class AB for linear GSM EDGE operation with proper heatsinking for the NI-780H flange and follow NXP's reference design evaluation PCB layout to achieve rated gain and efficiency at 1.81 GHz. This page synthesizes distributor pricing, verified drop-in same-package alternatives, and practical RF design notes that go beyond the manufacturer datasheet to help RF engineers select and source this part quickly.
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
The NXP MRF8S18120HSR3 is a 72 W CW N-channel enhancement-mode lateral MOSFET (LDMOS) designed for cellular base station power amplifiers covering the 1805-1880 MHz GSM and GSM EDGE bands. Packaged in the NI-780S ceramic flanged package, the device is specified at VDD = 28 V, IDQ = 800 mA, with 18.2 dB typical power gain and operates to 65 V drain rating. An RF power LDMOS transistor is a lateral double-diffused MOSFET optimized for high-frequency, high-power amplification in the 1 MHz to 3 GHz range. It belongs to the broader hierarchy of RF power transistors -> power transistors -> discrete semiconductors -> semiconductors. LDMOS devices replaced older bipolar and Si LDMOS technology in cellular base stations because they offer high gain, high efficiency, excellent thermal performance, and simplified biasing compared to bipolar junction transistors (BJTs). Key features of the MRF8S18120HSR3 include 18.2 dB typical gain at 1.81 GHz, support for Class AB and Class C operation across all common cellular modulation formats, an integrated ESD protection structure, and NiPdAu-plated ceramic packaging for high-reliability surface-mount reflow assembly. The NI-780S package provides a low-inductance, low-thermal-resistance footprint suited to high-power pulsed and CW operation. The lateral device geometry uses an N-channel enhancement-mode structure built on a silicon substrate with a high-resistivity epitaxial layer, providing high breakdown voltage and ruggedness into load-mismatch conditions typical of cellular antenna networks. At 28 V operation the device achieves high efficiency in Doherty and push-pull amplifier topologies used for modern macro-cell and micro-cell base stations. Typical applications include GSM and GSM EDGE macro-cell base-station final-stage power amplifiers, WCDMA/LTE 1800 MHz driver stages, industrial RF heating, and high-power 1.8 GHz pulsed amplifiers. Its 72 W CW rating also makes it useful in DVB-T or other OFDM service transmitters operating in the same band. When designing with this part, pay close attention to heat dissipation. A heatsink with sufficient thermal mass is required for continuous CW operation, and matching network design must follow the manufacturer reference design to achieve specified gain and efficiency. Always observe the 65 V drain-source breakdown maximum with adequate headroom margin. This page synthesizes manufacturer datasheet parameters, distributor pricing, drop-in alternatives, and practical RF amplifier design notes not consolidated on the manufacturer datasheet.
MRF8S18260HSR6 - 74W, 1.81GHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF8S18260HSR6 is a high-power N-channel RF power MOSFET rated at 74W output in the 1.805 GHz to 1.88 GHz band, housed in an NI-1230S (SOT-1110B / Case 375J-02) cavity package optimized for surface-mount base-station and industrial RF applications. It is specified at 30V operation with 1.6A DC current handling and delivers a typical in-band gain of 17.9 dB per the NXP product literature, making it suitable for the output stage of high-power Doherty, push-pull, or single-ended transmitter chains in the 1800 MHz cellular / DCS / LTE band. An RF power MOSFET is a discrete lateral or vertical transistor whose drain-source channel is optimized for large-signal radio-frequency amplification rather than low-frequency switching or analog signal conditioning. Within the broader semiconductor taxonomy, the MRF8S18260HSR6 belongs to the family of RF power transistors -> discrete MOSFETs -> discrete semiconductors, sharing its lineage with cellular-infrastructure and broadcast amplifier stages where peak envelope power, gain linearity, and ruggedness under mismatch are critical design constraints. Key features include a 65V drain-source breakdown rating, a saturated output of 260W pulsed per the MRF8S18260 part family designation, and NXP's Ni-1230 ceramic-packaged flange intended for low-inductance PCB or heatsink mounting. Internally the device is a push-pull pair of N-channel LDMOS-style RF cells; the 'H' suffix indicates an unmatched input, allowing the engineer to build his own input-matching network for arbitrary frequencies and bandwidths within the 1.805 to 1.88 GHz window. Typical applications include base-station power amplifiers in GSM/EDGE, TD-SCDMA, and small-cell LTE transmitters, where the part typically sits behind a driver stage and feeds into an external isolator, circulator, or harmonic filter. The high gain reduces driver-stage bill of materials, while the Ni1230 package offers repeatable thermal performance and easy drop-in mechanical replacement on the heatsink or pallet. When designing with this part, derate carefully at high VSWR: the datasheet specifies mismatch tolerance at rated power and the engineer should verify bias, gate-voltage sequencing, and thermal resistance on the application-specific board stack-up. Use NXP's reference designs and the Freescale/NXP application notes for matched-circuit starting values, because the unmatched input leaves many degrees of freedom that must be constrained by simulation.
MRF8S19260HR6 - 74W 30V 1.99GHz RF Power LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF8S19260HR6 is an N-channel enhancement-mode lateral MOSFET designed for CDMA and multi-carrier base station power amplifier applications. Operating from 1930 MHz to 1990 MHz, this RF power transistor delivers 74 W average output power at 30 V supply with 18.2 dB gain and a 1.6 A bias point, all housed in the NI-1230-8 ceramic bolt-down package. It is engineered for cellular infrastructure in the PCS/AWS uplink band. An RF power transistor (LDMOS) is a specialized power MOSFET laterally diffused on a silicon substrate, designed to amplify high-frequency RF signals with high efficiency and ruggedness. Within the hierarchy: RF transistor -> power transistor -> MOSFET -> discrete semiconductor, LDMOS has become the dominant technology for base-station power amplifiers below 3 GHz due to its high gain, good linearity, and cost efficiency compared to GaAs and Si bipolar alternatives. The MRF8S19260HR6 is one example in NXP's Airfast family of laterally-diffused RF power devices. Key features include 18.2 dB typical power gain at 1960 MHz, 65 V drain-source voltage rating (V(BR)DSS), operation in Class AB or Class C for all major cellular modulation formats, integrated ESD protection, and a thermally optimized NI-1230-8 ceramic package. The ceramic bolt-down flange provides low thermal resistance for liquid-cooled or forced-air base-station designs. The MRF8S19260HR6 is designed around W-CDMA and multi-carrier drive profiles, supporting both symmetric and asymmetric carrier aggregation across the 1930-1990 MHz band. Its lateral MOSFET structure delivers superior linearity versus earlier-generation bipolar devices, simplifying DPD (digital pre-distortion) correction in Doherty amplifier topologies. Typical applications include W-CDMA/CDMA base-station final-stage PAs, multi-carrier GSM/EDGE amplifiers, and Doherty PA modules for the PCS/AWS uplink band. It is also used in repeater and small-cell infrastructure where high gain and rugged CW survivability are required. Design considerations require adequate heat-sinking via the NI-1230-8 bolt-down flange, proper via-fenced microstrip input/output matching networks on the recommended PCB substrate, and a regulated 30 V gate-bias supply sequenced after the drain supply. Always consult the NXP MRF8S19260H datasheet for S-parameter files and application notes before final layout. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical PA design notes that go beyond the manufacturer datasheet presentation.
MRF8S19260HSR6 - 74W RF Power LDMOS, 1930-1990 MHz | NXP
The NXP MRF8S19260HSR6 is a 74 W average, 30 V single W-CDMA lateral N-channel RF power MOSFET (LDMOS) designed for cellular base station transmitters operating from 1930 to 1990 MHz. It is rated for 65 V drain breakdown, delivers 18.2 dB gain at 1.99 GHz, and is qualified for Class AB and Class C operation across all standard cellular base-station modulation formats including CDMA, W-CDMA, and multi-carrier signals. A power LDMOS transistor is a specialized laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-power RF amplification. Within the taxonomy, it sits below RF power MOSFET -> power MOSFET -> MOSFET -> discrete transistor -> discrete semiconductor. LDMOS devices dominate cellular base-station power amplifier (PA) architectures because they combine high RF gain, excellent efficiency, broadband operation, and cost-effective silicon technology versus GaAs or GaN alternatives for sub-3 GHz macros. Key features of the MRF8S19260HSR6 include 74 W average output power, 18.2 dB power gain at 1.99 GHz, 30 V typical operating drain voltage, and a ruggedized package capable of withstanding the high VSWR mismatches encountered in cellular base-station installations. The device is housed in an NI-1230S-8 ceramic/bolt-down air-cavity package with integrated input and output matching networks optimized for the 1930-1990 MHz band. According to the NXP datasheet, this part is designed to deliver high reliability under multi-carrier W-CDMA drive conditions. The device uses NXP's high-voltage LDMOS process technology, which provides high breakdown voltage, low output capacitance, and inherent thermal stability when mounted on a properly dimensioned cold-plate. Internal ESD protection and over-voltage ruggedness are integrated at the die level, supporting field reliability under harsh outdoor base-station thermal cycles. Typical applications include W-CDMA, CDMA, LTE, and multi-carrier cellular base-station final-stage power amplifiers, repeaters, and high-power broadband RF amplifiers operating in the 1930-1990 MHz PCS/AWS band. Designers should mount the device on a copper or aluminum heat spreader with controlled thermal resistance (θJC specified in the datasheet) and use external circulators or isolators when antenna VSWR is variable. For multi-carrier signals, gate bias must be precisely tuned to maintain linearity while meeting adjacent-channel leakage ratio (ACLR) specifications.
MRF8S21100HR5 - 100W 2.17GHz RF Power MOSFET | NXP
The NXP MRF8S21100HR5 is an N-channel enhancement-mode RF power MOSFET designed for W-CDMA and LTE cellular base station applications at frequencies up to 2170 MHz, delivering 24 W output power at 28 V test condition in the NI-780H-2L ceramic package (Case 465-06). It provides 18.3 dB typical power gain at 2.17 GHz, supports a maximum drain-source breakdown voltage of 65 V, and is rated for 100 W P1dB-class pulsed RF operation in the cellular infrastructure band. An RF power MOSFET is a lateral or vertical metal-oxide-semiconductor field-effect transistor optimized to deliver radio-frequency power at high efficiency with controlled gain. In the broader taxonomy, it sits below RF transistor -> RF power transistor -> RF power amplifier device -> discrete RF semiconductor. RF MOSFETs are the dominant device technology in modern cellular base station power amplifiers because they offer excellent linearity, high gain, and repeatable performance in Class AB biasing for digitally modulated signals such as W-CDMA, LTE, and 5G NR. Key features include a 65 V V(BR)DSS breakdown rating that provides ample headroom for 28 V operation, 18.3 dB gain at 2.17 GHz that reduces driver-stage complexity, and an enhancement-mode gate that simplifies bias circuits because no negative gate voltage is required to keep the device off. The NI-780H ceramic flange package provides low thermal resistance for proper heatsinking in RF amplifier modules, and the case-465-06 industry-standard footprint enables reuse of proven pallet layouts across amplifier generations. The MRF8S21100HR5 uses NXP's HV8 (high-voltage 8th-generation) LDMOS process technology, which combines high breakdown voltage, high gain, and excellent thermal performance. This process is engineered for Doherty and Class AB PA topologies that are widely used in modern macro-cell and micro-cell base station transmitters for 3G/4G/5G radio access networks. The LDMOS architecture provides good RF ruggedness into mismatch conditions commonly encountered in field-deployed antenna systems. Typical applications include W-CDMA/LTE base station power amplifiers, Doherty amplifier final stages, and Class AB linear RF amplifiers in cellular infrastructure equipment operating between 2110 MHz and 2170 MHz. The high gain and 65 V breakdown make it equally suitable for driver stages in higher-power amplifier chains. When designing with this device, careful attention must be paid to PCB material selection (low-loss RF laminates recommended), heatsink mounting torque (per case 465-06 specifications), and proper drain bias sequencing to prevent parametric drift. Use of double-shielded RF test fixtures is recommended during characterization to avoid oscillation in the 2 GHz region. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing an engineering-focused view of the MRF8S21100HR5 for base station RF power amplifier designers.
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
The NXP MRF8S21100HSR3 is a 28 V N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA and LTE base-station applications across the 2110-2170 MHz band, rated for 24 W average output power (W-CDMA) and 100 W peak in a NI-780S (Case 465A-06) ceramic package. It is characterized under 100% PAR-tested conditions for guaranteed output capability and supports both Class AB and Class C operation across the cellular base-station modulation formats. An RF power MOSFET is a lateral-diffusion metal-oxide-semiconductor transistor built on a high-resistivity silicon substrate with a low-parasitic leadless ceramic package optimized for RF matching and thermal dissipation. Within the broader hierarchy, it sits below RF transistor -> power transistor -> discrete semiconductor, with N-channel enhancement-mode operation providing fail-safe bias behavior at gate threshold. Key features include 18.3 dB typical power gain at 2.14 GHz, 65 V drain-source breakdown voltage (V(BR)DSS), and operation from a 28 V nominal supply. The device is characterized with a series-equivalent large-signal model to simplify Doherty and single-ended PA circuit simulation. Built-in ESD protection and integrated gate-source clamping diodes simplify board design. Architecturally, the MRF8S21100HSR3 uses laterally diffused metal-oxide-semiconductor (LDMOS) technology with optimized source-via grounding through the ceramic package flange. This geometry minimizes common-source inductance, which is critical at 2.1 GHz where even fractional-nH parasitic losses degrade gain and PAE. Thermal performance is delivered through the NI-780S ceramic flange that bolts directly to the heatsink. Typical applications include W-CDMA/LTE macro-cell base-station PAs, Doherty final-stage amplifiers, and 2110-2170 MHz band UMTS/3GPP signal-chain transmit sections where linear efficiency is required. The wide bandwidth also makes it suitable for driver stages in multi-band radio units. When designing with this part, ensure the input and output matching networks are designed for the 2110-2170 MHz band with low-loss substrate; gate bias should be set to Class AB (approximately 2.7 V) for W-CDMA linearity. The flange temperature must remain below the maximum rating during continuous W-CDMA operation. This page synthesizes NXP official datasheet parameters, distributor pricing as of 2026-10-16, drop-in alternatives within the same NI-780S footprint, and practical design notes not found in the manufacturer datasheet alone.
MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP
The NXP MRF8S21120HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for 2110-2170 MHz W-CDMA and LTE base station applications, delivering 28 W average output power at 28 V in the NI-780HS ceramic package. With a V(BR)DSS of 65 V, 17.6 dB typical gain at 2.17 GHz, and 100% PAR (Peak-to-Average Ratio) tested performance, this part is built for Doherty and Class AB final-stage amplifiers used in modern 4G macro-cell transmit chains. A RF power MOSFET is a discrete transistor specifically engineered to amplify high-frequency signals in the MHz-to-GHz range. Unlike generic switching MOSFETs used in DC-DC converters, RF power MOSFETs use a lateral structure with carefully engineered interdigitation of gate, drain, and source fingers to minimize parasitic capacitance and maximize gain at RF frequencies. Within the taxonomy, MRF8S21120HSR3 belongs to the family of RF power transistors -> discrete semiconductors -> power amplifiers -> wireless infrastructure components, and sits in NXP's Airfast RF power family, which dominates cellular base station transmitter designs through the 4G era and into early 5G upgrade modules. Key features include a typical CW output power capability well above the 28 W average rating for pulsed W-CDMA signals, integrated ESD protection, a thermal resistance (theta_JC) optimized for liquid-cooled or forced-air heatsinking in macro base stations, and a ruggedness level capable of surviving 10:1 VSWR at the rated output. The device is specified for operation between 2110 MHz and 2170 MHz - exactly the downlink band of the global 3GPP Band 1 (IMT-2000/UMTS), making it a drop-in final-stage device for most macro-cell transmit lineups serving that band. The MRF8S21120HSR3 uses a high-voltage LDMOS (Laterally Diffused MOSFET) process on a ceramic flange (NI-780HS) package with source on the case for direct chassis-ground mounting. The device is intended to be bolted to a heatsink or cold plate; thermal management is critical because at full output the die must dissipate up to 4-5 times the average RF power as heat. The part is also available as MRF8S21120HR3 (push-pull balanced version in a slightly different outline) for Doherty amplifier configurations. Typical applications include W-CDMA/LTE macro base station power amplifiers, Band 1 (2100 MHz) final-stage amplifiers, general-purpose Class AB RF power amplifiers from 2110-2170 MHz, driver stages in higher-power Doherty layouts, and upgrade/transmitter lineups for distributed antenna systems and small-cell base stations. Designers typically pair it with NXP's MRF8S21120HSR3 as the main device and a smaller peak amplifier such as the MRF6S21100N for Doherty operation. When designing with this part, allocate copper-clad footprints and load-pull-correct matching networks, and ensure the gate bias network provides a low-impedance path to ground at the operating frequency. Use gate-source clamping protection as recommended in the NXP datasheet to prevent thermal runaway during fault conditions. Designers should also account for the source being case-connected - any heatsink must be electrically isolated from RF ground using an insulator pad and thermal grease.
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
The NXP MRF8S21200HR6 is a 48 W average, 28 V RF Power N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) designed for W-CDMA and LTE base station applications operating across the 2110 MHz to 2170 MHz frequency band, supplied in the NI-1230 ceramic flange-mount package. It delivers 18.1 dB power gain and is rated for a 65 V maximum drain-source voltage with a typical test bias of 28 V at 1.4 A, providing the gain and ruggedness required for Doherty and Class AB power amplifier stages in cellular infrastructure. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a transistor architecture that integrates a high-voltage N-channel MOSFET with a laterally diffused drift region, allowing high RF output power, high efficiency, and excellent thermal performance in a single die. LDMOS sits within the broader hierarchy of RF power transistors -> discrete semiconductors -> power management, and is the dominant device technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz due to its high breakdown voltage, ease of impedance matching, and stable performance under DPD (digital predistortion) correction. Key features include 2110-2170 MHz operation, 18.1 dB power gain, high gain flatness across the operating band, and exceptional thermal performance enabled by the NI-1230 ceramic flange-mount package. The part is also available as the MRF8S21200HSR6 in a different flange-mount outline, and both H and HS variants share the same silicon and RF performance. The lateral MOSFET structure provides high input impedance, simplifying driver-stage design and biasing. Typical applications include W-CDMA and LTE base station power amplifier final stages, Doherty amplifier configurations for macro-cell and small-cell transmitters, and cellular infrastructure repeaters. The 18.1 dB gain is sufficient to drive 48 W of average output power from a low-power driver stage, which simplifies the overall gain chain and reduces bill-of-materials cost. When designing with the MRF8S21200HR6, ensure the input and output matching networks are optimized for the 2110-2170 MHz band and that the PCB thermal interface to the ceramic flange is rated for the full Pdiss of the device. Flange-mount parts require torqued mounting to a heatsink or spreader with appropriate thermal compound, and the device pin leads should be soldered with care to avoid mechanical stress on the ceramic body.
MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP (formerly Freescale) MRF8S21200HSR6 is a dual N-channel enhancement-mode lateral MOSFET (LDMOS) designed for W-CDMA and LTE base station RF power amplifiers covering the 2110-2170 MHz band. Per the manufacturer datasheet, the device delivers 48 W average output power at 28 V in W-CDMA/LTE modulation formats, with 18.1 dB power gain and tested at 1.4 A quiescent current. It is housed in an NI-1230HS ceramic air-cavity package compatible with bolt-down or solder reflow mounting on PCB-based Doherty amplifier pallets. An RF power LDMOS transistor is a specialized lateral double-diffused MOSFET optimized for high-frequency, high-power amplification. LDMOS devices sit within the broader category of RF power transistors alongside GaN HEMTs, GaAs MESFETs, and bipolar RF transistors, and they have been the workhorse silicon technology for cellular macro-cell base-station PAs from the 700 MHz band through 2.7 GHz. Their lateral structure places source, drain, and gate on the same surface, enabling high breakdown voltage, excellent thermal conduction through the substrate, and stable gain at RF frequencies where standard power MOSFETs lose efficiency. Key features of the MRF8S21200HSR6 include integrated dual-section design for Doherty amplifier final-stage use, high breakdown voltage of 65 V for rugged operation into VSWR mismatches, and thermal robustness rated to a maximum junction temperature of 225 C. The lateral MOSFET architecture delivers the gain flatness and intermodulation distortion (IMD) performance required for multi-carrier W-CDMA and LTE signals with 4G-LTE PAPRs of 6-9 dB. Typical applications include W-CDMA, LTE, and TD-LTE macro-cell base-station PAs in the 2110-2170 MHz downlink band, especially in Doherty amplifier configurations where the dual-section package simplifies final-stage layout. The ceramic NI-1230HS package provides the low thermal resistance and RF grounding plane necessary for stable Doherty operation with high peak-to-average ratios. When designing with this device, ensure the PCB mounting flange is properly bolted to a heatsink with adequate thermal compound. Input and output matching networks must be tuned for the 2110-2170 MHz band; the device is not broadband-matched below 2110 MHz or above 2170 MHz. Bias sequencing should follow NXP application note conventions for stable quiescent current under thermal stress. This page synthesizes real-time distributor pricing from Mouser, the official NXP datasheet, and verified drop-in alternatives not found on a single manufacturer page, giving RF design engineers a single decision point for W-CDMA/LTE base-station PA component selection.
MRF8S23120HR5 - 120W RF Power LDMOS, 2.3GHz, 28V | NXP
The NXP Semiconductors MRF8S23120HR5 is a 120-watt RF power N-channel LDMOS transistor optimized for continuous-wave (CW) and pulsed amplifier operation in the 2300-2400 MHz ISM and WiMAX/4G/LTE infrastructure bands. Built on NXP's HV8 LDMOS process, it delivers 16 dB typical gain at 2.3 GHz, 28 V VDD, and 800 mA quiescent bias while sustaining a 28 W CW output into a 50 ohm load. It is packaged in the NI-780H-2L (SOT-957A) ceramic flanged ceramic package designed for high-power RF with excellent thermal conduction to an external heatsink. An RF power LDMOS transistor is a laterally-diffused MOSFET specifically engineered to handle tens to hundreds of watts of continuous radio-frequency power at frequencies from tens of megahertz to several gigahertz. Within the taxonomy, an LDMOS sits at the level of discrete semiconductor -> transistor -> MOSFET -> RF power MOSFET -> LDMOS. These devices form the final amplification stage in cellular base-station power amplifiers, microwave links, industrial RF heating, and aerospace telemetry systems. They offer a better gain-bandwidth product and thermal ruggedness than bipolar RF transistors, and lower conduction loss than GaAs solutions at this power tier. Key features of the MRF8S23120HR5 include 65 V drain-source breakdown rating for high-voltage operation, integrated ESD protection, simple single-supply 28 V biasing, and broadband input/output matching friendly to Class AB operation. The device's gain flatness across the 2300-2400 MHz band makes it well suited for multi-carrier LTE signals where linearity matters. Technical depth: The HV8 LDMOS process delivers 16 dB linear gain at 2.3 GHz with a typical output efficiency near 32% in CW Class AB. The internal package parasitic inductance is controlled through the NI-780H ceramic body, which also serves as the main thermal path. Built-in passive matching networks at the input ease external circuit design, while two bolt-down flanges provide low-thermal-resistance mounting directly to a heatsink or copper spreader. The device is rated for 28 W typical CW output at 28 V, with typical pulsed peak output at 120 W under narrow pulse conditions. Typical applications include 2.3-2.4 GHz WiMAX and LTE small-cell/base-station power amplifiers, RF plasma drivers, industrial microwave heating, telemetry transmitters, and radar pulse chains. The 28 V rail and 50 ohm interface simplify integration into standard Doherty or push-pull amplifier architectures. A key design consideration is heatsinking: the ceramic flanged package relies on the system chassis or external heatsink for thermal management. Without adequate heatsinking, junction temperature can exceed 200 C and degrade long-term reliability. Designers should mount the device to a machined aluminum or copper cold plate with a thin layer of thermal grease. This page synthesizes distributor pricing (DigiKey, Mouser, LCSC), drop-in alternatives within the NI-780 family, and practical RF design notes not found in the manufacturer datasheet alone.
MRF8S9100HSR3 - 72W RF Power MOSFET 920-960MHz | NXP
The NXP MRF8S9100HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for GSM and GSM EDGE cellular base station applications spanning 865-960 MHz, delivering 72 W CW output power from a 28 V supply. Housed in the NI-780S ceramic air-cavity package, the device is characterized at 920 MHz with 19.3 dB typical power gain and a 500 mA quiescent bias point, making it suitable for both Class AB and Class C amplifier topologies in Doherty, single-ended, or push-pull configurations. A RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete transistor optimized for radio-frequency power amplification, distinct from low-frequency power MOSFETs by its lateral die geometry, low parasitic capacitances, and matched input/output impedances. Within the transmitter chain hierarchy, it sits between the driver amplifier and the antenna, after the modulator/upconverter; within the broader component hierarchy, RF MOSFET belongs to discrete semiconductors, specifically power transistors, and is the building block for high-efficiency base-station PAs that drive macro-cell antennas and repeaters. Key features of the MRF8S9100HSR3 include 70 V drain breakdown voltage, internal input matching, an integrated ESD protection structure, and a thermally-efficient NI-780S flange with low thermal resistance (approximately 0.45 °C/W junction-to-case typical for this package family). The part is supplied on tape-and-reel (suffix R3) and is rated for 225 °C maximum junction temperature with gold-plated leads for long-term reliability in outdoor basestation environments. The device employs a laterally-diffused MOSFET (LDMOS) process on a silicon substrate, the industry-standard technology for sub-3 GHz macro-cell base-station power amplifiers due to its high gain, high breakdown voltage, and excellent thermal conductivity versus GaN-on-SiC at these frequencies. The MRF8S9100HSR3 is characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters, enabling accurate load-pull amplifier design. Typical applications include 900 MHz GSM/EDGE macro-cell base-station power amplifiers, cellular repeaters and boosters, public-safety Land Mobile Radio (LMR) infrastructure, and industrial/scientific RF generators. The 28 V bias aligns with standard telecom rails, and the wide 865-960 MHz bandwidth covers GSM-900 uplink/downlink and adjacent cellular bands in a single amplifier stage. When designing with the MRF8S9100HSR3, ensure that the gate bias network provides a stable quiescent current of 500 mA and that the heatsink is sized so that the junction remains below 200 °C at full CW output; a copper-molybdenum or copper-tungsten spreader is recommended under the ceramic flange to manage heat flux. This page consolidates current distributor pricing, parametric alternative parts in the same NI-780S ceramic package, and verified design notes pulled from the manufacturer datasheet, providing information gain beyond what distributor product pages typically expose.
MRF8S9102NR3 - 28W RF Power MOSFET 865-960MHz | NXP
The NXP MRF8S9102NR3 is an RF power field-effect transistor built as a 28V single W-CDMA lateral N-channel enhancement-mode MOSFET, rated for 28W average output power across the 865-960 MHz cellular base-station band and housed in the OM-780-2 ceramic package. An RF power MOSFET is a discrete transistor designed to amplify high-frequency radio signals to the multi-watt levels required at the antenna side of a base station or repeater. In the broader semiconductor taxonomy, the MRF8S9102NR3 sits inside the RF power transistor family -> discrete MOSFET -> power semiconductor -> discrete component hierarchy. Lateral N-channel MOSFETs differ from vertical power MOSFETs in that the current flows horizontally through the silicon die, which reduces parasitic capacitances and enables multi-hundred-megahertz operation while still allowing kilowatt-class pulsed RF outputs in some part variants. Key specifications include a 28V drain-to-source operating voltage, 750 mA quiescent drain current at bias, a 920 MHz typical operating frequency, and a power gain of 23.1 dB. The part is characterized for single-carrier W-CDMA with a 28W average output envelope, features a 70V maximum drain-source breakdown rating, and is qualified for Class AB and Class C amplifier operation. The OM-780-2 package uses a ceramic body with an integrated flange/flange-mounted thermal pad that bolts directly to the system heatsink for low thermal impedance. Architecturally, the MRF8S9102NR3 uses NXP's HV8-series laterally-diffused metal-oxide-semiconductor (LDMOS) process, which is the industry-preferred technology for macro-cell base-station PA final stages because it balances high power density, high drain efficiency, and good digital-pre-distortion (DPD) linearizability. Typical deployments include 900 MHz GSM/EDGE, CDMA2000, and W-CDMA macro-cell base-station driver and final PAs, where 28W average output and a 23 dB gain stage are needed for sector-level coverage. Variants of this device family are also used in public-safety Land Mobile Radio repeaters and in industrial-scientific-medical (ISM) 900 MHz power amplifiers. When designing with this transistor, source and load impedances must be presented through the device's recommended matching networks, and the gate bias must be sequenced before drain voltage to avoid device stress - refer to the manufacturer datasheet for the full bias, gain, and ruggedness test conditions. Evaluate thermal rise carefully because continuous RF output of 28W plus DC dissipation at 28V will create substantial junction temperature under insufficient heatsinking. This page consolidates distributor pricing, drop-in package-compatible alternatives, and bias/thermal design guidance that an engineer typically has to assemble from multiple sources.
MRF8S9120NR3 - 33W RF Power MOSFET 865-960MHz | NXP
The NXP Semiconductors MRF8S9120NR3 is a single W-CDMA lateral N-Channel RF power MOSFET designed for cellular base station final-stage amplification, delivering 33 W average output power at 865-960 MHz from a 28 V supply in an OM-780-2 ceramic air-cavity package. A lateral N-Channel Enhancement-Mode MOSFET is the dominant transistor architecture for high-frequency RF power amplification above 500 MHz because the lateral layout minimises parasitic capacitances and supports high breakdown voltage. Within the broader taxonomy, this part is a discrete RF power MOSFET, a sub-category of power MOSFETs, which themselves belong to the discrete semiconductor family used in power management and RF front-end subsystems of macro-cell base stations and repeaters. Key specifications include 19.8 dB typical power gain, 33 W average W-CDMA output power, 865-960 MHz operating band (700-1000 MHz usable), 28 V drain supply, and 800 mA typical quiescent drain current. The device supports Class AB and Class C operation, accommodating all major cellular modulation formats including W-CDMA, LTE, and GSM, making it a flexible final-stage building block for multi-standard base stations. The MRF8S9120NR3 uses NXP's HV8 lateral MOSFET process, which integrates gold metallisation for high ruggedness under output mismatch (high VSWR) and ESD protection on the gate. Internal matching networks are intentionally absent, allowing the designer to set the optimum load-line impedance for the chosen frequency sub-band and modulation bandwidth. Typical applications include W-CDMA/LTE base station final-stage power amplifiers, GSM/EDGE macro-cell transmitters, RF repeaters, and digital broadcast transmitters in the 900 MHz cellular band. Designers also use this part in industrial RF heating and pulsed-RF driver stages where high gain and 28 V operation are required. When designing with the MRF8S9120NR3, mount the part on a copper or brass flange with sufficient thermal mass to keep the junction below the 200 C maximum rating; at 33 W average and modest efficiency, several watts must be dissipated as heat. Use a low-loss substrate such as Rogers RO4003 for the input and output matching networks and follow NXP's reference design PCB layout in the datasheet for stable operation. This page synthesises distributor pricing, parametric drop-in alternatives, and practical design notes that go beyond the NXP datasheet, helping RF engineers shorten the selection and PCB bring-up process for 900 MHz cellular base-station final stages.
MRF8S9170NR3 - 50W 920-960MHz RF Power LDMOS | NXP
The NXP MRF8S9170NR3 is a 50 W average, 28 V lateral N-channel enhancement-mode RF power MOSFET (LDMOS) designed for W-CDMA cellular base station applications in the 920 to 960 MHz band. It is characterized at 28 V with 1 A quiescent bias, delivers 19.3 dB typical power gain, and is supplied in the NXP OM-780-2 ceramic package. The device is 100% PAR-tested for guaranteed output power capability and is characterized with series-equivalent large-signal impedance parameters, simplifying Doherty and Class AB power amplifier design. An RF power LDMOS transistor is a type of power MOSFET (metal-oxide-semiconductor field-effect transistor) specifically engineered to deliver high RF output power at high frequencies. LDMOS sits in the broader taxonomy of discrete semiconductors -> MOSFETs -> RF power MOSFETs -> laterally-diffused (LD) MOSFETs. It is the workhorse of cellular base-station power amplifiers because it offers high drain efficiency, excellent thermal stability, and good linearity when used with digital pre-distortion (DPD) systems. Within a base-station radio, the LDMOS final-stage PA converts DC input power into a modulated RF carrier that feeds the antenna, and the linearity of that PA directly determines the achievable data throughput and error-vector magnitude (EVM) of the cellular link. Key features include a 70 V drain-source voltage rating, integrated ESD protection, an internal matching network for the 920-960 MHz cellular band, and high ruggedness for mismatch tolerance. The OM-780-2 ceramic flange package provides a low thermal-resistance path (typically specified in the manufacturer's datasheet) that can be bolted directly to a heatsink or cold-plate, enabling continuous CW or pulsed W-CDMA operation at the rated 50 W average output power. Typical applications include cellular base-station final-stage PAs at 920-960 MHz, W-CDMA / LTE macro-cell driver amplifiers, Class AB and Class C amplifier topologies, and Doherty PA configurations where the device's characterized impedance data enables the 90-degree offset-line combiner. The part is also used in repeaters, boosters, and tactical-radio RF power stages operating in the upper-cell band. When designing with the MRF8S9170NR3, always use the manufacturer's recommended bias sequencing (gate voltage applied before drain voltage, gate discharged before drain is removed) to avoid device damage. Provide adequate heatsinking with a low-thermal-resistance mounting interface, and follow the PCB layout and grounding recommendations in the NXP datasheet reference design to achieve the rated gain and efficiency. This page synthesizes verified distributor pricing, characterized drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving RF base-station engineers a single source of parametric, supply-chain, and design data.
MRF8S9202NR3 - 58W 920-960MHz RF Power MOSFET | NXP
The NXP MRF8S9202NR3 is a 58 W average output power, 28 V single W-CDMA lateral N-channel RF power MOSFET designed for cellular base station applications across the 920-960 MHz band. Housed in the OM-780-2 ceramic air-cavity package, it delivers 19 dB typical gain and high efficiency for Class AB and Class C amplifier topologies. The device is fabricated using NXP's high-frequency HV8 lateral MOSFET process technology optimized for RF energy transfer at ultra-high frequencies. An RF Power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor engineered to deliver radio-frequency power amplification, typically used in the final power amplifier (PA) stage of a transmitter. Unlike small-signal MOSFETs used in digital logic, RF power MOSFETs feature low parasitic capacitances, high breakdown voltage, and robust thermal management to handle continuous high-power RF energy. Within the broader taxonomy, RF power MOSFETs belong to discrete semiconductors -> transistors -> MOSFETs -> RF MOSFETs, and ultimately to RF & wireless power amplification chain components. Key specifications include an operating frequency range of 920-960 MHz, 58 W average output power (W-CDMA), 28 V drain supply voltage (VDD), 1.3 A quiescent drain current (IDQ), 19 dB power gain, and a minimum drain-source breakdown voltage of 70 V. The OM-780-2 ceramic package provides a hermetic seal and a low-thermal-resistance path, critical for maintaining junction temperature under continuous RF drive. The device is rated for surface-mount installation and supports the high thermal flux inherent to base-station duty cycles. Architecturally, the MRF8S9202NR3 uses a lateral N-channel enhancement-mode MOSFET structure, which minimizes feedback capacitance (Crss) and supports broadband gain at 900 MHz. The HV8 process enables 28 V operation with high breakdown margin, reducing the need for elaborate over-voltage protection in the final-stage amplifier module. Typical applications include W-CDMA/LTE base-station PAs at 900 MHz, GSM/EDGE linear amplifier drivers, industrial RF heating at the 900 MHz ISM band, and military/commercial radio links. The wide breakdown margin (70 V) supports rugged operating conditions at high VSWR loads common in cellular infrastructure. When designing with the MRF8S9202NR3, ensure the PCB land pattern follows the OM-780-2 recommended footprint and that the heat-spreader is properly bolted to the PCB ground pour with adequate thermal compound. Bias sequencing should bring gate voltage up before drain voltage to avoid parametric drift. This page consolidates distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet with engineering context not always surfaced in stock aggregator listings.
MRF8S9220HSR3 - 65W 920-960MHz W-CDMA RF Power LDMOS | NXP
The NXP MRF8S9220HSR3 is a 65 W average output, 28 V lateral N-channel enhancement-mode RF power LDMOS transistor designed for 920-960 MHz single-carrier W-CDMA base station applications, housed in an NI-780S ceramic package. It delivers 65 W P1dB-equivalent average power in the 920-960 MHz cellular band with 19.4 dB typical power gain and 100% PAR-tested for guaranteed W-CDMA output capability, while the dual-path MRF8S9220HR3 variant supports higher power configurations. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power transistor technology optimized for high-frequency, high-power RF amplification. LDMOS transistors sit within the broader MOSFET family and the power management hierarchy of RF front-end components. Compared to bipolar junction transistors (BJTs), LDMOS provides higher gain, better efficiency, and superior thermal stability, making it the dominant technology in cellular base station power amplifiers from 700 MHz through 2.7 GHz. The MRF8S9220HSR3 is part of NXP's HV8 family of 50 V-rated lateral RF MOSFETs. Key features include typical 19.4 dB power gain at 960 MHz, single-carrier W-CDMA operation at 28 V VDD, integrated ESD protection, and Ni-pad gold-free metallization for high-volume assembly. Characterized with series-equivalent large-signal impedance parameters, the device supports both Class AB and Class C bias configurations across common cellular modulation formats including CDMA2000, W-CDMA, and LTE. Designers can use this part in Doherty, Class AB push-pull, or single-ended final-stage topologies. The 70 V maximum drain-source rating provides substantial avalanche headroom over the 28 V nominal operating voltage, supporting robust SWR mismatch tolerance. Series-equivalent output impedance data is published to streamline matching network synthesis on FR-4 or ceramic substrates. Typical applications include 900 MHz GSM/EDGE base station PAs, LTE band 8 final-stage amplifiers, RFID reader transmitters, industrial RF heating, and ISM-band solid-state power sources. The wide frequency coverage also supports amateur radio amplifiers in the 902-928 MHz ISM segment. When designing with this part, bias the gate at approximately 2.8 V quiescent for Class AB and ensure the thermal interface uses a clamped or soldered heatsink. Designers should also confirm adequate drain-side decoupling (10 uF + 1 nF) close to the package tab to suppress VDD ringing under W-CDMA envelope peaks. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including same-brand part-number variants and cross-reference data sourced from public distributor cross-reference tools.
MRF9002NR2 - 1GHz, 2W, 26V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF9002NR2 is a 1000 MHz, 2 W, 26 V lateral N-channel enhancement-mode broadband RF power MOSFET housed in a 16-pin PFP (Power Flat Pack) package. Designed for broadband commercial and industrial applications up to 1.0 GHz, the device is rated for 26 V base-station operation, delivers 18 dB power gain at 960 MHz, and achieves 37 dBm (5 W) pulsed output power, with the industry's typical continuous-power point near 2 W into 50 ohms. An RF MOSFET is a field-effect transistor whose geometry, package, and matching structures are tuned to deliver useful power gain at radio frequencies from HF through microwave bands. LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) variants such as this one sit inside the broader hierarchy of power transistors (LDMOS -> RF power MOSFET -> discrete RF transistor -> RF semiconductor), and they have largely displaced older bipolar and silicon-FET parts in 26 V cellular base-station and broadband-instrumentation transmitters because of their high gain, broadband response, and ruggedness under VSWR mismatch. Key specifications include 18 dB minimum power gain at 960 MHz / 25 mA bias, 37 dBm (5 W) typical pulsed output capability, a 65 V maximum drain-source rating, N-channel enhancement-mode operation, and a PFP-16 ceramic power flat pack with a solderable backside thermal contact. The low input capacitance and high transition frequency simplify matching from HF through L-band, while the common-source configuration simplifies PCB layout by allowing grounded-source tabs and a single positive drain feed. Typical applications include VHF/UHF broadband linear amplifiers, 900 MHz ISM-band and cellular base-station driver stages, instrumentation RF power modules, and general-purpose 26 V common-source RF amplifiers. The broadband response also makes the part attractive for laboratory amplifiers, RF laboratory signal sources, and test-and-measurement front-ends where a single part must cover wide frequency ranges without re-matching. When designing with this device, bias the gate at approximately 2-4 V above threshold (around 25 mA quiescent current) for Class-AB operation, and ensure the heatsink/PCB copper area under the PFP-16 backside contact meets thermal-resistance budgets so the junction stays below the rated maximum. Adequate input and output matching networks are mandatory to realize the datasheet's 18 dB gain figures. This page synthesizes distributor pricing, drop-in alternative guidance, and practical design notes sourced from distributor pages and the manufacturer datasheet - engineering context not always visible on a single distributor page.