MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
Teilenummer: MRF8S21200HR6 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $85.5 | $855,00 |
| 100 | $76 | $7.600,00 |
| 500 | $68.5 | $34.250,00 |
| 1.000 | $62 | $62.000,00 |
MRF8S21200HR6 Übersicht
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a transistor architecture that integrates a high-voltage N-channel MOSFET with a laterally diffused drift region, allowing high RF output power, high efficiency, and excellent thermal performance in a single die. LDMOS sits within the broader hierarchy of RF power transistors -> discrete semiconductors -> power management, and is the dominant device technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz due to its high breakdown voltage, ease of impedance matching, and stable performance under DPD (digital predistortion) correction.
Key features include 2110-2170 MHz operation, 18.1 dB power gain, high gain flatness across the operating band, and exceptional thermal performance enabled by the NI-1230 ceramic flange-mount package. The part is also available as the MRF8S21200HSR6 in a different flange-mount outline, and both H and HS variants share the same silicon and RF performance. The lateral MOSFET structure provides high input impedance, simplifying driver-stage design and biasing.
Typical applications include W-CDMA and LTE base station power amplifier final stages, Doherty amplifier configurations for macro-cell and small-cell transmitters, and cellular infrastructure repeaters. The 18.1 dB gain is sufficient to drive 48 W of average output power from a low-power driver stage, which simplifies the overall gain chain and reduces bill-of-materials cost.
When designing with the MRF8S21200HR6, ensure the input and output matching networks are optimized for the 2110-2170 MHz band and that the PCB thermal interface to the ceramic flange is rated for the full Pdiss of the device. Flange-mount parts require torqued mounting to a heatsink or spreader with appropriate thermal compound, and the device pin leads should be soldered with care to avoid mechanical stress on the ceramic body.
Drop-in-Alternativen für MRF8S21200HR6 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF8S21200HR6 (gleiche Bauform und Footprint) – abweichend in Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF8S21200HSR6
✅ Drop-In✓ Auf Lager
$96.75 / Stück
Datenblatt ansehen →MRF8S18260HR6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8S19140HR6
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8S21200HR6 Grenzwerte & elektrische Eigenschaften
| Transistortyp | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | 28 V |
| Test Current | 1.4 A |
| Power Gain | 18.1 dB |
| Output Power (Average) | 48 W |
| Drain-Source Voltage (Max) | 65 V |
| Configuration | Common Source, 2 elements |
| Case Connection | Source |
| Montageart | Surface Mount (NI-1230 ceramic flange) |
| Gehäuse | NI-1230 |
| Application | W-CDMA, LTE base station power amplifiers |
| Class of Operation | Class AB, Class C |
| Surface Mount | Yes |
| RoHS-Status | Compliant |
MRF8S21200HR6 Pin-Konfiguration
| Pin 1 | RF Input — RF signal input (gate) |
| Pin 2 | Gate Bias — DC gate bias supply |
| Pin 3 | Drain — DC drain supply (internally connected) |
| Pin 4 | RF Output — RF signal output (drain) |
| Pin 5 | Source — Source and case/flange (grounded) |
RF Sicherer Arbeitsbereich at 2110-2170 MHz, 28V bias
Typische Anwendungen
MRF8S21200HR6 ist geeignet für 6 Anwendungs: W-CDMA Base Station Power Amplifier, LTE Base Station Power Amplifier, Doherty Amplifier Main/Peaking Stage, Cellular Infrastructure Repeater, Macro-Cell Class AB Power Amplifier, Small-Cell Base Station PA.
W-CDMA Base Station Power Amplifier
The MRF8S21200HR6 is the canonical NXP choice for W-CDMA base station PA final stages across the 2110-2170 MHz downlink band. Its 48 W average output power and 18.1 dB gain map directly to the typical 4-carrier 3GPP RF power target for macro-cell PAs, while its 28 V bias and high VDS(max) of 65 V provide the headroom required for reliable operation under high PAR (peak-to-average ratio) multi-carrier signals.
Empfohlen
LTE Base Station Power Amplifier
The MRF8S21200HR6 supports LTE base station PAs operating across the 2110-2170 MHz range with 48 W of average output at the 28 V / 1.4 A test bias, making it suitable for LTE macro-cell final stages and small-cell power amplifiers. Its high gain of 18.1 dB reduces driver-stage complexity, and its LDMOS architecture supports digital predistortion (DPD) correction for highly linear amplification required by modern LTE signals.
Empfohlen
Doherty Amplifier Main/Peaking Stage
For Doherty PA architectures at 2110-2170 MHz, the MRF8S21200HR6 serves as both the main (carrier) and peaking amplifier device. Its high gain and excellent back-off efficiency, combined with NXP's well-characterized behavioral models, allow Doherty implementation with greater than 45% efficiency at 8 dB output power back-off - critical for energy-efficient cellular infrastructure.
Empfohlen
Cellular Infrastructure Repeater
The MRF8S21200HR6 is well matched to cellular infrastructure repeater final-stage requirements in the 2110-2170 MHz band. The 48 W average output drives signal-relay antennas covering wide outdoor or in-building coverage zones, and the 18.1 dB gain reduces the cascaded gain chain depth required from a single repeater module.
Empfohlen
Macro-Cell Class AB Power Amplifier
Beyond Doherty, the MRF8S21200HR6 is also deployed in traditional Class AB power amplifier modules at 2110-2170 MHz for macro-cell base stations. The 65 V VDS(max) provides safe operating margin across temperature and VSWR mismatches, while the 18.1 dB gain supports simple single-ended designs without additional driver stages.
Empfohlen
Small-Cell Base Station PA
Although its 48 W average output targets macro-cell deployments, the MRF8S21200HR6 is also used in high-power small-cell base station PAs operating in the 2110-2170 MHz band where higher output per antenna is required. The NI-1230 flange-mount package provides robust thermal dissipation for outdoor small-cell enclosures, where ambient temperatures can push junction ratings.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF8S21200HR6 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF8S21200HSR6 | MRF8S18260HR6 | MRF8S19140HR6 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-1230 | NI-1230HS (mechanical variant, same RF) | NI-1230 - same | NI-1230 - same |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz - same | 1805-1880 MHz | 1930-1990 MHz |
| Test Voltage | 28 V | 28 V - same | 28 V | 28 V |
| Drain-Source Voltage (Max) | 65 V | 65 V - same | 65 V | 65 V |
| Transistor Type | LDMOS N-Channel | LDMOS N-Channel - same | LDMOS N-Channel | LDMOS N-Channel |
Wichtigste Unterscheidungsmerkmale
- Pin-compatible within NI-1230HR6 family of NXP base station LDMOS devices (vs. MRF8S21200HSR6)
- Part of NXP's mature, well-characterized 8th-generation LDMOS family (vs. Aft18S290-13SR3)
- Industry-standard 28V bias matches existing base station PA module infrastructure (vs. MRF6S18060NR1 (TO-270AB))
Designhinweise
Estimated: At 48 W RF output, 30% PAE, and 28 V bias, the MRF8S21200HR6 typically dissipates around 115 W DC. The NI-1230 ceramic flange is designed for bolting to a heatsink or amplifier chassis using thermal compound at a controlled torque - insufficient thermal sinking will trip the device into thermal compression or destruction. Plan heatsink capacity for the full DC power dissipation plus 25% margin.
The NI-1230 flange-mount package uses 5 through-hole/surface-mount leads plus a case terminal bonded to source. Solder the leads with care to avoid mechanical stress on the ceramic body - keep lead length short and use lead-forming jigs. The PCB thermal pad under the flange (or chassis spreader) should be sized to match the flange footprint with thermal vias rated for high DC power conduction.
Always operate the MRF8S21200HR6 within the 65 V VDS(max) absolute maximum, never above - even transient overvoltage from VSWR mismatches can destroy the device. Use the input/output matching networks specified in the NXP reference design rather than scaling from another band; the part's match at 2110-2170 MHz is tuned for high efficiency and gain flatness, and off-band operation requires matched re-tuning. Gate bias should be sequenced on after drain voltage for safe operation.
Compliance-Informationen
RoHS compliant per NXP product page. The MRF8S21200HR6 is a base-station-grade RF power MOSFET; it is not AEC-Q100 qualified (that is for automotive-grade ICs).
