Leistungs-MOSFET-Treiber
Produkte (714)
STGIPS20C60-H - 600V 20A 3-Phase IGBT IPM | STMicroelectronics
The STMicroelectronics STGIPS20C60-H is a 600 V, 20 A three-phase IGBT Intelligent Power Module (IPM) from the SLLIMM (Small Low-Loss Intelligent Molded Module) family, integrating gate drivers and short-circuit rugged trench-gate IGBTs in a 25-pin PowerDIP module measuring 0.993 inch (25.23 mm) wide. It is designed as a compact, drop-in inverter stage for variable-frequency drives and is rated for 600 V collector-emitter blocking with 20 A continuous phase current, plus an integrated bootstrap diode network, undervoltage lockout, and an on-board comparator for fault/over-current sensing via an external shunt resistor. What is an Intelligent Power Module (IPM)? An IPM is a power semiconductor module that integrates the power switches (here: IGBTs), their gate drivers, and protection features (UVLO, short-circuit, fault output) into a single isolated package. IPMs sit in the power management hierarchy between discrete IGBT/MOSFET inverter stages and higher-level integrated motor-drive modules, simplifying PCB design and shortening time-to-market for three-phase motor control applications such as HVAC compressors, washing-machine pumps, and small industrial inverters. Key features include 600 V short-circuit rugged IGBTs with trench-gate field-stop technology for low VCE(sat) and soft switching, a built-in shunt-style comparator with internal Vref and external CIN pin for hardware over-current protection, undervoltage lockout on all six driver channels, an open-drain fault output, and interlock logic that prevents shoot-through. The molded 25-PowerDIP package provides reinforced insulation and a thermally conductive substrate that simplifies heatsink attachment versus discrete through-hole designs. Typical applications include three-phase motor drives for white goods (washing machines, refrigerators, dishwasher pumps), low-power industrial variable-frequency drives (VFDs) up to about 1.5 kW, fan and compressor inverters for HVAC, and small servo pumps. The IPM's 20 A rating makes it suitable for 230 V AC mains-fed systems driving motors in the 0.37-1.1 kW range. When designing with this device, route the bootstrap capacitors close to pins U, V, W and ensure the comparator CIN pin is filtered to avoid nuisance trips. The internal Vref is non-adjustable, so over-current threshold is set by the external shunt resistor value only.
STPM801 - Programmable Current Limiting Switch | STMicroelectronics
The STPM801 is a programmable current limiting switch from STMicroelectronics, designed for power distribution and protection in a wide range of applications. It integrates a high-side MOSFET switch with programmable current limiting, thermal shutdown, and under-voltage lockout, providing robust protection for downstream circuitry. The device operates from an input voltage range of 2.7V to 5.5V and can deliver up to 1.5A of continuous current, making it suitable for USB ports, hot-swap applications, and general power management. A current limiting switch is a type of power management IC that controls the flow of electrical current to a load, protecting the power source and the load from overcurrent conditions. It is a key component in the power management hierarchy, sitting between the power source (such as a battery or USB port) and the load (such as a peripheral device). By integrating a MOSFET switch, current sensing, and protection features, it simplifies circuit design and enhances system reliability. Key features of the STPM801 include programmable current limiting via an external resistor, allowing designers to set the current limit from 100mA to 1.5A. It also features a low quiescent current of 50µA, a fast 1ms turn-on time, and a low on-resistance of 70mΩ, minimizing power loss. The device includes thermal shutdown at 150°C and under-voltage lockout at 2.5V, ensuring safe operation under fault conditions. It is available in a compact SOT-23-5 package, ideal for space-constrained designs. The STPM801 uses a high-side N-channel MOSFET architecture with an internal charge pump to drive the gate, enabling low voltage drop and efficient power delivery. The current limit is set by an external resistor connected to the ILIM pin, providing flexibility for different applications. The device also features a fault output pin that signals overcurrent or thermal shutdown events, enabling system-level monitoring and control. Typical applications include USB port power distribution, hot-swap power management, and general-purpose load switching in consumer electronics, industrial control, and automotive systems. The wide input voltage range and programmable current limit make it versatile for various power distribution scenarios. When designing with the STPM801, ensure the external current-limit resistor is placed close to the ILIM pin to minimize parasitic inductance. The input and output capacitors should be placed near the device to ensure stable operation and reduce voltage transients. Proper thermal management is essential when operating at high currents, as the device dissipates power proportional to the current and voltage drop.
STUSB1702YQTR - USB Type-C PD Controller with TX/RX Line Driver | STMicroelectronics
The STMicroelectronics STUSB1702YQTR is a USB Type-C port controller with integrated TX/RX line driver and BMC (Biphase Mark Coding) transceiver, qualified to AEC-Q100 and supplied in a 24-pin QFN EP (4x4 mm wettable flanks) package. It implements a USB Type-C source controller with VBUS power switch, dead-battery support, and USB Power Delivery (PD) message handling for USB 2.0 and SuperSpeed USB 3.0 signaling paths. The device operates over a supply range of 4.1 V to 22 V with a -40 C to +105 C operating temperature window, and the wettable-flank QFN-24 (QFN24 EP 4x4 mm) package enables automated optical inspection for automotive applications. Key features include USB Type-C cable attach and orientation detection (CC1/CC2 logic), USB PD 2.0 / 3.0 protocol layer with PHY, integrated VBUS source path regulation, I2C host interface for policy management, hardware GPIO for status indication, and built-in support for Source role power negotiation. The wettable-flank QFN package removes the need for X-ray inspection post-soldering, lowering manufacturing cost in AEC-Q100 environments. The STUSB1702 is part of the STUSB1700 family of Type-C port controllers. Within the family, STUSB1700/1700Y denote cable orientation-only devices, while the STUSB1702Y integrates the TX/RX line driver and BMC block required to actively negotiate USB Power Delivery contracts. Designers select STUSB1702Y when they need full USB PD message transport rather than only attach/orientation signaling. Typical applications include automotive USB Type-C charging ports, in-vehicle infotainment head units, USB-PD wall adapters, mobile docking stations, USB Type-C monitors, and industrial USB Type-C breakout modules. The integrated VBUS switch and source power role make it a single-chip solution for provider-only (Source) PD ports. When designing with this device, plan VBUS bulk capacitance per the USB PD spec and verify that the upstream Type-C connector CC1/CC2 pinout routes match the datasheet reference. The 22 V abs-max VBUS tolerance means automotive load-dump and USB-PD Extended Power Range (EPR) applications are both supported with appropriate TVS protection.
Si8271GB-ISR - 4A Isolated Gate Driver, 2.5kV, 8-SOIC | Skyworks
The Skyworks Solutions Si8271GB-ISR is a 4 A galvanically-isolated single-channel gate driver with 2.5 kV RMS withstand voltage, housed in a narrow-body 8-pin SOIC (SO-8) package. It delivers 4 A peak source/sink drive current with a typical propagation delay of 50 ns and high CMTI of 400 kV/µs for switching power MOSFETs, IGBTs, and SiC/GaN HEMTs. An isolated gate driver is a galvanic isolation barrier combined with a high-current buffer stage, used to drive the gate of a high-side or low-side power transistor while protecting low-voltage control logic from high-voltage transients. The isolated gate driver category sits within the power management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Si827x-family parts use proprietary silicon-oxide isolation instead of optocouplers or transformers, which eliminates LED-aging concerns and provides tight timing characteristics. Key features include 4 A peak output current, 30 ns typical propagation delay, 400 kV/µs common-mode transient immunity (CMTI), 2.5 kV RMS isolation per UL1577, integrated UVLO with 3 V threshold for IGBT/SiC protection, de-glitch input filtering, and a programmable dead-time (DT) pin. The narrow-body 8-SOIC footprint is pin-compatible with common opto-isolated gate drivers, enabling direct PCB replacement in many designs. The device uses Skyworks' proprietary silicon isolation technology based on RF-coupled differential transmission across a high-voltage silicon-oxide barrier. This approach eliminates the lifetime and CTR degradation inherent in optocouplers, and avoids the high-frequency emissions and large footprint of pulse transformers. The driver outputs swing rail-to-rail from VDD to GND on each side, supporting both +12 V and unipolar gate-drive rails. Typical applications include driving IGBTs in motor-control inverters, SiC MOSFETs in EV traction and onboard chargers, GaN HEMTs in telecom DC-DC bricks, solar inverters, industrial SMPS half-bridge stages, and digital-isolation upgrades for opto-coupler-based legacy designs. The wide driver supply range supports both 5 V and 12/15 V gate-drive rails. When designing with this part, place a 100 nF decoupling capacitor close to each VDD pin and a 4.7 µF bulk capacitor on the output-side VDD. For half-bridge use, the programmable dead-time pin prevents shoot-through; consult the manufacturer datasheet for the DT resistor selection table.
TBD62503AFNG - 7-Ch DMOS Sink Driver Array 50V/0.3A | Toshiba
The Toshiba TBD62503AFNG is a 7-channel sink-type DMOS transistor array housed in a 16-pin SSOP package, capable of switching loads up to 50V and 300 mA per channel. Built on Toshiba's BiCD (Bipolar, CMOS, DMOS) monolithic silicon process, the device integrates seven open-drain N-channel DMOS output transistors that share a common ground return, making it ideal for low-side switching of relays, solenoids, lamps, LED displays, and logic-level buffers. A DMOS transistor array is a type of power driver IC that uses seven discrete N-channel double-diffused MOS transistors integrated onto a single silicon die, each with its own gate and drain pin and a shared source (substrate) tied to ground. This monolithic array category sits within the broader power management and driver IC taxonomy: transistor array -> peripheral driver -> interface IC -> semiconductor. The 50V drain-to-source breakdown and 0.3A continuous drain current make it well-suited for industrial control boards and 24V industrial bus switching. Key features include a wide operating supply range of up to 50V on the drain side, low on-resistance DMOS outputs that minimize conduction losses versus bipolar Darlingtons, 3V CMOS/TTL-compatible logic inputs, and built-in clamping diodes for inductive loads. Each of the seven channels can be driven independently from a microcontroller GPIO or logic gate, with output currents of 300 mA continuous and pulse handling exceeding 500 mA per channel. The architecture is optimized for digital-logic-to-load interfacing: each input pin drives a MOSFET gate through a CMOS inverter stage, while the output stage is a DMOS open-drain switch with intrinsic body diode protection. Because the outputs are N-channel low-side switches rather than Darlington pairs, the on-resistance stays in the low-ohm range across the full temperature range, eliminating the classic bipolar Vce(sat) loss that wastes power as heat in legacy ULN2003-style arrays. Typical applications include programmable logic controller (PLC) digital output modules, LED matrix and seven-segment display drivers, relay and solenoid driver boards, and unipolar stepper motor driving where multiple low-side channels are required. The SSOP-16 footprint is also compatible with breadboard-friendly adapter boards for prototyping. When designing with this part, note that it is a sink (low-side) driver only - loads must be tied to the positive supply. Each output requires flyback protection for inductive loads; the device integrates a body diode, but external Schottky or fast-recovery diodes are recommended above 100 mA inductive currents to keep thermal dissipation under control. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
TDA21462AUMA1 - 60A OptiMOS Smart Power Stage 4.25-16V | Infineon
The Infineon TDA21462AUMA1 is a 60 A integrated smart power stage (DrMOS) for synchronous buck DC/DC converters, combining a low-quiescent-current synchronous buck gate driver IC with co-packaged high-side and low-side OptiMOS MOSFETs plus an integrated Schottky diode, housed in a 39-pin PG-IQFN package. The device supports an input voltage range of 4.25 V to 16 V and switching frequencies from 100 kHz to 1500 kHz, targeting single- and multi-phase buck converters in computing, telecom, and industrial point-of-load applications. A DrMOS (Driver + MOSFET integrated power stage) is a category of power management IC that monolithically co-packages a half-bridge gate driver with its high-side and low-side power MOSFETs into a single surface-mount module. This category sits within the broader power management hierarchy: DrMOS -> integrated power stage -> voltage regulator -> power management IC -> semiconductor. By collapsing the driver-to-MOSFET loop into one package, DrMOS parts minimize parasitic inductance, reduce switch-node ringing, and shrink PCB footprint versus discrete driver-plus-MOSFET implementations. Key features of the TDA21462AUMA1 include cycle-by-cycle over-current protection with a programmable threshold, VCC and VDRV under-voltage lockout (UVLO), phase fault detection, IC temperature reporting, and thermal shutdown. The internal MOSFET current-sense algorithm with temperature compensation delivers accurate current telemetry versus inductor DCR-sense methods, enabling precise multi-phase current sharing. The exposed top-side thermal pad and source-down package orientation optimize PCB heat transfer and minimize switch-node ringing when Infineon layout guidelines are followed. The TDA21462 utilizes a bootstrap high-side gate drive architecture fed by an internal charge pump, supporting 100% duty-cycle operation. Internal dead-time control and adaptive anti-shoot-through protection limit cross-conduction losses. The integrated Schottky diode across the low-side MOSFET reduces body-diode reverse-recovery losses during dead-time, improving light-load efficiency and reducing switch-node undershoot. Differential PWM inputs (PWM and /PWM) interface directly to multiphase PWM controllers from Infineon, Renesas, Monolithic Power, and ON Semiconductor. Typical applications include 60 A single-phase or interleaved multi-phase buck VRM cores for network processors, ASICs, and FPGAs; telecom 12 V intermediate bus converters; industrial PoL rails; and high-current graphics and AI accelerator cards. The 39-pin PG-IQFN footprint simplifies layout and is pin-compatible with industry-standard 5 V/12 V DrMOS products. When designing with this device, follow the manufacturer reference layout exactly: place input MLCC capacitors within 1 mm of the PVIN/PGND pins, keep the BOOT capacitor loop minimal, and flood the top-side exposed pad with thermal vias. The cycle-by-cycle OCP threshold must be programmed via the ILIM pin resistor before enabling PWM switching. Do not operate above 16 V PVIN or below 4.25 V PVIN; the device does not tolerate 20 V transients without external TVS clamping. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, application-specific design notes, and pinout diagrams drawn from the Infineon TDA21462 datasheet, providing engineering context not duplicated on the manufacturer's PDF.
TDA235E0 - 300A Dual-Phase Smart Power Stage | Infineon
The Infineon TDA235E0 is a dual-phase smart power stage IC designed for high-current, high-density power delivery to AI accelerators, server CPUs, and vertical power delivery (VPD) modules. It integrates Infineon OptiMOS 6 MOSFETs with a dual-phase driver IC into a compact 6 x 6 x 0.8 mm³ package, delivering up to 300 A peak current per phase and 120 A total design current with power density exceeding 2 A/mm². The device supports both lateral and vertical power delivery topologies and is engineered for liquid-cooled data center applications. A smart power stage (SPS) is an integrated power-conversion building block that combines the high-side and low-side MOSFETs, gate drivers, current sensing, and protection circuitry into a single package, enabling multi-phase buck regulators that feed low-core voltages (typically 0.6 V to 1.2 V) to high-current processors. Smart power stages sit below multi-phase controllers and DC-DC converter ICs in the power management hierarchy, and are a category of point-of-load (PoL) regulators optimized for AI/GPU/ASIC silicon. They expose per-phase current and temperature telemetry to the upstream controller for adaptive voltage positioning, load-line regulation, and fault management. Key features of the TDA235E0 include integrated OptiMOS 6 technology for best-in-class figure-of-merit (FOM), a precision per-phase current-sense output for multi-phase current balancing and telemetry, built-in protection (over-current, over-temperature, under-voltage), high switching frequency support for reduced output inductance, and top-side thermal pad optimized for cold-plate liquid cooling. The exposed top side has low junction-to-top-side thermal impedance to facilitate direct-to-cold-plate heat removal in server racks. The architecture pairs two synchronous buck power stages (each a high-side + low-side OptiMOS 6 half-bridge plus gate driver) inside one package, sharing a common bootstrap and ground reference. Telemetry includes per-phase analog current output and overtemperature flag. Compared with discrete DrMOS implementations, the TDA235E0 reduces PCB footprint, eliminates parasitic loop inductance between MOSFETs and driver, and simplifies multi-phase interleaving for 6-phase or 8-phase VRs feeding 600 A-class GPU/ASIC cores. Typical applications include AI accelerator core rails (GPU, TPU, custom ASICs at 600-1000 A), server CPU voltage regulators, vertical power delivery modules for processor sockets, high-performance computing motherboards, and 48 V direct-to-load buck stages where two TDA235E0 phases feed a secondary-side multi-phase VR. The compact 6x6 mm footprint allows 8-phase solutions to fit beneath BGA sockets. When designing with the TDA235E0, follow the manufacturer's recommended PCB layout for input capacitors and gate-drive return paths to minimize switching losses. Ensure the upstream multi-phase controller is compatible with Infineon's SPS interface (current-sense and temperature-flag timing); the TDA235E0 is pin-compatible with the higher-current TDA235E5 variant in the same family. This page synthesizes Infineon launch information, distributor pricing references, and design considerations not found in a single datasheet, including drop-in alternatives and liquid-cooling thermal guidance.
TDE1707BFPT - 0.5A Intelligent Power Switch, 48V, SOIC-8 | STMicroelectronics
The STMicroelectronics TDE1707BFPT is a 0.5 A integrated intelligent power switch housed in an 8-pin SOIC package, designed for industrial proximity detection and high-side / low-side driver applications. It supports a wide supply voltage range of 6 V to 48 V and features internal voltage clamping, supply and output reversal protection, thermal shutdown, plus GND and Vs open-wire protection, making it a robust solution for harsh electrical environments. An intelligent power switch is a type of power management IC that combines a power MOSFET output stage with diagnostic feedback, protection features, and sometimes an internal auxiliary regulator. Within the broader semiconductor taxonomy, it belongs to the family of power switches and load drivers, sitting between a discrete MOSFET (which requires external protection logic) and a fully featured solid-state relay. This category serves as a building block in industrial automation systems where a logic-level signal must safely switch a higher-power DC load with built-in fault reporting. Key specifications of the TDE1707BFPT include a continuous output current of 0.5 A, bipolar output stage configurable for either high-side (load to GND) or low-side (load to Vs) operation, and an internal +5 V auxiliary supply usable for powering external circuitry. The device also includes a dedicated LED status driver capable of sourcing or sinking approximately 3 mA (IOLD typ.), which reflects the output state for diagnostics. Overload and short-circuit protections are integrated, along with thermal shutdown for safe operation under fault conditions. From an architectural perspective, the TDE1707BFPT integrates a vertical power DMOS output transistor with on-chip logic for protection, diagnostic feedback, and an internal 5 V LDO that powers both the gate drive and any external sensor circuitry. The bipolar 1:2 output configuration simplifies PCB routing by allowing the same part to serve as either a source or sink driver. Designers should note that the supply and output reversal protection eliminates the need for external TVS diodes on the output node in many 24 V industrial systems. Typical applications include proximity detectors and inductive position sensors in industrial 24 V PLCs, 12 V and 24 V automotive body and chassis modules (relay and solenoid replacement), and process control solenoid or valve drivers. The internal +5 V supply is particularly useful for powering Hall-effect or proximity sensors directly from the switch without needing an additional regulator. When designing with this part, ensure that the load current does not exceed 0.5 A continuously and verify thermal performance under worst-case ambient conditions. The SO-8 package has limited thermal headroom, so PCB copper pour area directly under the exposed pad is critical for thermal dissipation. This page consolidates distributor pricing, drop-in alternatives, and application guidance that goes beyond the manufacturer datasheet to support rapid design-in.
TEA2096T/1J - GreenChip Dual SR Controller | NXP | LLC Power
The NXP TEA2096T/1J is a GreenChip dual synchronous rectifier (SR) controller IC for the secondary side of switched-mode power supplies, housed in an 8-pin SO (SO-8) package. It is a dedicated SR controller for resonant converters such as LLC topologies, with two driver stages for driving two SR MOSFETs and an adaptive gate drive method for maximum efficiency at any load. A synchronous rectifier controller replaces the rectifier diodes on the secondary side of an SMPS with MOSFETs driven by a dedicated controller, dramatically reducing conduction losses. Within the power management hierarchy, the TEA2096T sits in the secondary-side controller category of switching controller ICs. Where a diode drop of 0.5 V to 0.7 V wastes power at high output currents, a synchronously driven MOSFET with low RDS(on) can cut that loss by a factor of 5 to 10, which is why SR controllers are standard in high-efficiency adapters and server power stages. Key characteristics of the TEA2096T include its dual-channel architecture (two SR MOSFET drivers in one SO-8 package), an adaptive gate drive scheme that optimizes conduction time and dead-time at any load, and GreenChip design principles targeting high efficiency and low standby power. The dual-driver integration reduces external component count versus single-channel SR controllers in center-tapped secondary windings. Technically, the TEA2096T senses the drain-source voltage of the SR MOSFETs to detect current direction, turning the gates on when the body diode conducts and off before reverse current flows. This adaptive control prevents cross-conduction and reverse-current losses that reduce efficiency in fixed-timing SR schemes, especially at light load where fixed-delay controllers typically mis-time gate transitions. Typical applications include LLC resonant converters in AC-DC adapters, USB-PD fast chargers, and server/telecom power supplies with center-tapped or full-bridge secondary rectification. High-current 5 V and 12 V rails benefit most, where diode losses dominate. Design consideration: proper placement of the sense lines close to the SR MOSFET drains is critical; long sense traces pick up switching noise and can cause false turn-on, degrading efficiency or damaging the MOSFETs. This page adds information gain beyond the datasheet: distributor pricing with quantity breaks, alternative sourcing options, and practical design notes compiled from manufacturer and distributor data as of 2026-09-13.
TEA2376BT-1Y - Digital Interleaved PFC Controller | NXP
The NXP Semiconductors TEA2376BT/1Y (TEA2376BT-1Y) is a digital configurable two-phase interleaved Power Factor Correction (PFC) controller for high-efficiency power supplies, operating in discontinuous conduction mode (DCM) or quasi-resonant (QR) mode with valley switching over a switching frequency range of 40 kHz to 130 kHz, housed in a 14-pin SOIC (SO-14, 3.90 mm width) surface-mount package. A PFC controller is a power management IC that shapes the input current waveform of an AC-DC power supply so that it follows the input voltage, maximizing power factor and minimizing harmonic distortion. Within the power-supply control hierarchy, the PFC stage sits between the input rectifier and the downstream DC-DC converter, ensuring compliance with harmonic-current regulations such as those applied to TVs, servers and industrial equipment. Key features include digital configurability that reduces external component count, two-phase interleaving that halves input ripple current and spreads thermal stress across two boost stages, and valley switching that minimizes switching losses for high efficiency. For light-load conditions the controller supports phase shedding and burst mode operation, improving standby and low-load efficiency in modern energy-regulated designs. Technically, the TEA2376 family implements its control loop digitally, allowing configuration of protection thresholds, frequency ranges and phase management without resistor-capacitor tuning. Discontinuous conduction and quasi-resonant operation avoid hard-switching turn-on losses, while interleaving cancels ripple currents at the PFC input, simplifying EMI filter design. Typical applications include TV power supplies, computing and server power supplies, and industrial power systems where a regulated DC bus (typically around 380-400 V from a boost PFC stage) feeds a downstream flyback or LLC converter. The interleaved topology suits power levels where a single boost phase would be thermally or ripple limited. When designing with the TEA2376BT/1Y, verify the supply voltage range (22 V per distributor data) and configure the switching-frequency window so that valley switching remains valid across the full mains and load range. This page synthesizes distributor pricing, lifecycle data, and practical design guidance for the TEA2376BT/1Y not consolidated in the manufacturer datasheet.
TJA1028TK/3V3/20/J - LIN Transceiver + 3.3V LDO SBC | NXP HVSON-8
The NXP Semiconductors TJA1028TK/3V3/20/J is a LIN 2.0/2.1/SAE J2602 and ISO 17987-4:2016 (12 V) compliant transceiver with an integrated 3.3 V low-dropout voltage regulator capable of delivering up to 70 mA, housed in an 8-pin HVSON (3x3 mm) package. It functions as a LIN Mini System Basis Chip, combining the physical layer transceiver and an MCU supply rail in a single footprint. A LIN transceiver (Local Interconnect Network transceiver) is a physical-layer device that connects a microcontroller's UART/SCI to a single-wire LIN bus used widely in automotive body electronics. The TJA1028 belongs to the SBC (System Basis Chip) product category, integrating both the bus interface and a low-dropout (LDO) voltage regulator that powers a local MCU or sensor from the vehicle's 12 V supply. SBCs sit hierarchically above LIN transceivers and below broader automotive PMICs in the power-management IC taxonomy. Key specifications include a wide battery supply range of 4.5 V to 28 V (with load-dump survival up to 42 V), an integrated 3.3 V LDO at up to 70 mA, strong ESD performance (greater than or equal to 8 kV HBM on the LIN pin), and support for both normal and low-power sleep modes. The 8-pin HVSON package offers a small 3x3 mm footprint with an exposed pad for low thermal resistance and robust PCB grounding. Internally the device integrates a LIN bus driver/receiver compliant with the LIN physical layer, a low-drop post-regulator, and mode-control logic accessed via the EN/NSTB pin. The 3.3 V LDO is stable with ceramic, tantalum, and aluminum output capacitors, simplifying BOM and enabling direct connection to a 3.3 V MCU such as NXP's S08 or Kinetis E-series. Typical applications include automotive body controllers, door/window/seat modules, HVAC sensors, steering-column switches, LIN sensor nodes (rain/light/temperature), and rear-view mirror controls. The integrated LDO eliminates an external regulator in each LIN node, reducing PCB area and BOM cost. A primary design tip is to provide adequate decoupling on the battery pin (a 100 nF ceramic close to VBAT plus a bulk capacitor on the bus supply), tie the exposed pad to a clean ground island, and use the sleep mode aggressively to keep quiescent current below the LIN network spec for current-limited nodes. This page synthesizes distributor pricing, drop-in package equivalents, and practical design notes not collated on the manufacturer datasheet alone.
TJF1052IT/2Y - Isolated CAN Transceiver, 5Mbps, SOIC-16 | NXP
The NXP TJF1052IT/2Y is a galvanically isolated high-speed CAN transceiver that delivers up to 5 Mbps data rate in a 16-pin SOIC (7.50 mm width) package with 2500 Vrms isolation rating between the CAN protocol controller and the physical two-wire CAN bus. It integrates a 2-channel digital isolator with 20 kV/µs common-mode transient immunity (CMTI) for robust operation in electrically noisy industrial environments, and supports both 3.3 V and 5 V supply rails with Normal and Standby operating modes for low-power sleep behavior. The transceiver targets industrial applications where mandated or functional isolation between bus nodes and host controllers is required to break ground loops and protect downstream logic. A CAN (Controller Area Network) transceiver is the physical-layer interface between a CAN protocol controller (typically a microcontroller's CAN peripheral or an external CAN controller) and the differential CAN_H/CAN_L bus wires. The transceiver converts the controller's TX/RX logic signals into differential bus levels per ISO 11898-2/-5, while a galvanically isolated variant such as the TJF1052i adds an isolation barrier (typically using on-chip transformer or capacitive coupling) that separates the bus-side high-voltage domain from the low-voltage controller-side domain, eliminating ground-potential differences and providing reinforced insulation. Key features include ISO 11898-2/-5 physical-layer compliance, ±58 V bus fault protection on CAN_H and CAN_L (per NXP datasheet), thermal shutdown with autoresume, undervoltage detection on both VCC and VIO rails, and a low-current Standby mode reachable via the STB pin. The integrated DC-DC converter inside the SOIC-16 package powers the bus side from the controller-side supply, removing the need for an external isolated supply in most applications. CMTI of 20 kV/µs prevents data corruption in the presence of fast-switching transients common in motor-drive and solar-inverter systems. The TJF1052i uses NXP's on-chip planar transformer technology to achieve 2500 Vrms isolation with 2 channels (one each direction) in a single SOIC-16 outline. Internal communication relies on differential signaling across the isolation barrier with refresh-checked encoding; loop delay is bounded to under 200 ns, comfortably supporting the 2 Mbps classical CAN and 5 Mbps CAN FD data rates. Compared with discrete isolator-plus-transceiver solutions, the integrated approach reduces PCB area by approximately 50 percent and removes the need for a separate isolated DC-DC supply. Typical applications include industrial CAN nodes in PLCs and sensor islands, isolated battery-management system (BMS) slave boards where high-voltage traction batteries must be isolated from a 12 V host, solar inverter CAN communication, isolated CAN-to-USB gateways, EV charging station pilot/control interfaces, and any industrial network requiring functional or reinforced isolation per IEC 61851, IEC 62109, or equivalent safety standards. The wide 3.0 V to 5.25 V VIO range also allows direct interfacing with 3.3 V microcontrollers without level shifters. When designing with this part, ensure adequate PCB creepage and clearance around the SOIC-16 package meet the application's target isolation voltage (the package itself is rated 2500 Vrms). Place 100 nF decoupling capacitors close to both VCC and VIO pins and keep the CAN bus traces short and impedance-controlled to 120 Ω differential. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
TLE6289GP - 6-Channel Peak-and-Hold Switch | Infineon
The Infineon Technologies TLE6289GP is a smart 6-channel peak-and-hold switch integrated circuit for automotive power-management and load-driving systems. The verified distributor listings identify the device as a gate-driver IC and a 6-channel peak-and-hold switch, while the available search data does not expose a complete manufacturer datasheet. Exact electrical ratings, channel logic, timing, and automotive qualification therefore require confirmation in the manufacturer datasheet before a new design is released. The GP order code denotes Infineon's automotive-oriented package family, but its exact package dimensions, pin count, and terminal assignments must also be verified against the official document. A TLE6289GP is useful where several controlled outputs must share common protection, diagnosis, or peak-and-hold behavior. Six integrated channels can reduce discrete component count and board area compared with separate switched loads, although the common-device architecture also concentrates failure and thermal-management considerations. Engineers should compare the TLE6289GP with the specific load, short-circuit, surge, and diagnostic requirements of the target vehicle platform. The verified market listings support gate-driver and power-management categorization, but they do not establish whether every output has a dedicated diagnostic path, how the channels behave during overload, or whether the device supports cascading or individual shutdown. Those details directly affect suitability in pump, motor, solenoid, relay, and electronic-valve systems. The TLE6289GP is best treated as an automotive smart-switch candidate rather than a generic MOSFET driver. Its in-circuit value depends on matching the integrated protections to the load, validating the supply and pin definitions, and checking thermal performance at the maximum simultaneous switching duty cycle. This page distinguishes verified market facts from unverified technical assumptions and identifies the parameters that still require manufacturer-source confirmation.
TLE7181EMXUMA1 - 4-Ch Half-Bridge MOSFET Gate Driver | Infineon
The Infineon TLE7181EMXUMA1 is a 4-channel half-bridge gate driver IC dedicated to driving 4 N-channel power MOSFETs forming the converter stage of high-current DC motor drives in the automotive sector. Housed in a 24-pin PG-SSOP-24-4 (exposed-pad SSOP) package with non-inverting logic, it operates from a 5.5V to 28V supply range, supports up to 1.5A peak source/sink gate drive current, and provides an SPI/digital diagnostic interface with comprehensive fault feedback. The device is AEC-Q100 qualified, making it suitable for safety-relevant automotive applications such as electric power steering (EPS), electric water pumps, engine cooling fans, and brake-by-wire actuators. A gate driver IC is a power-management semiconductor that sits between a low-power microcontroller or logic controller and the high-current gate of a power MOSFET or IGBT. Its primary function is to level-shift logic-level PWM signals to the higher voltages required to fully enhance the power MOSFET, provide high peak current to rapidly charge and discharge the gate capacitance for fast switching, and protect the controller from the high-voltage switching transients present on the half-bridge. In the broader taxonomy, gate drivers belong to the power management family, sit alongside low-side drivers, high-side drivers, and isolated gate drivers, and serve as critical building blocks in motor-control, DC-DC, and inverter subsystems. Key features of the TLE7181EMXUMA1 include four independent half-bridge outputs capable of configuring as two full H-bridges, integrated charge pump for 100% duty-cycle high-side drive, programmable dead-time generation, short-circuit and over-current detection via dedicated current-sense comparator, under-voltage lockout (UVLO) on both VCC and VBS rails, overtemperature shutdown, and a serial peripheral interface (SPI) for fault read-back and configuration. The exposed thermal pad (PG-SSOP-24-4) provides a thermal resistance of approximately 31 C/W, allowing continuous operation at moderate switching frequencies in sealed automotive environments. Typical applications include brushed DC motor control in EPS systems, brushless DC (BLDC) motor pre-drivers, electric coolant and oil pumps, HVAC blower fans, transmission solenoids, and general-purpose automotive H-bridge inverters up to several hundred watts. A PWM/DIR interface allows direct connection to a microcontroller's timer peripherals for closed-loop current or speed control. The device's 12V support and integrated protection features reduce external component count, simplifying the design of ISO 26262-compliant motor drive subsystems. When designing with the TLE7181EMXUMA1, attention must be paid to PCB layout around the bootstrap capacitors, gate-drive loop minimization, and thermal management of the exposed pad. Designers should follow Infineon's reference design and application notes to achieve robust short-circuit detection and reliable operation across the automotive -40C to +150C temperature range.
TLE7244SLXUMA2 - 8-Ch Low-Side SPI Relay Driver | Infineon
The Infineon TLE7244SLXUMA2 is an 8-channel low-side power switch in PG-SSOP-24-7 package, delivering 290 mA per channel and designed specifically as a relay driver in automotive body and chassis applications. It operates from a supply range of 5 V to 28 V (3 V to 5.5 V logic supply), provides an SPI control and diagnostic interface, and offers four direct input pins for parallel control and PWM operation. Each of the eight outputs is protected against over-current, over-temperature, and short-circuit to ground and to battery. What is a low-side SPI relay driver? A low-side power switch is a type of power distribution IC that sits between the load (typically a relay coil, solenoid, or lamp) and ground, sinking current to switch the load on or off. When controlled by an SPI (Serial Peripheral Interface) link, a single microcontroller can manage many outputs with latched commands, while the driver handles the heavy current and protective functions locally. Low-side drivers belong to the broader category of power management ICs and, more specifically, intelligent load drivers / smart power switches used in automotive electronic control units. Key features of the TLE7244SLXUMA2 include eight open-drain N-channel outputs rated at 290 mA continuous, integrated protection with current limiting and thermal shutdown per channel, an SPI interface for diagnostics and configuration, four dedicated input pins for direct control or PWM generation, a limp-home function to maintain operation under microcontroller fault, and very low quiescent current in standby. The PG-SSOP-24-7 exposed-pad package provides excellent thermal dissipation and is qualified to Infineon's automotive reliability standards. Architecturally, the device pairs eight N-channel DMOS output stages with a digital control core that decodes SPI frames, drives fault flags, and arbitrates between direct-input and SPI commands. The embedded protective functions - over-current, open-load, over-temperature, and reverse battery - are designed to satisfy OEM body-controller module requirements, while the diagnostic word returned over SPI supports ISO 26262 functional-safety development at the system level. Typical applications include automotive body control modules driving relays and solenoids, junction box power distribution, lighting drivers (especially where PWM dimming is required), HVAC flap motors, and other inductive loads where protective switching and diagnostics are essential. The four input pins make it equally suitable as a stand-alone relay driver without MCU intervention during limp-home. When designing with this part, keep output flyback diodes or use relays with built-in freewheeling diodes because the low-side switch cannot clamp inductive kickback on its own. The exposed thermal pad must be soldered to a sufficient copper area on the PCB to keep junction temperature within ratings when driving multiple inductive loads simultaneously. Source: Infineon TLE7244SL product page and distributor datasheets, accessed 2026-09-14. This page combines verified distributor pricing, drop-in alternative analysis, and practical design notes that go beyond what the manufacturer datasheet alone offers, helping engineers select, source, and qualify the TLE7244SLXUMA2 more efficiently.
TLE75004EPDXUMA1 - 4-Ch Low-Side SPI Switch, 470mA | Infineon
The Infineon TLE75004EPDXUMA1 is a 4-channel low-side power switch with integrated N-channel MOSFETs, each capable of 470 mA continuous drain current, housed in a PG-TSDSO-14-41 exposed-pad package. The device integrates a 16-bit SPI interface for channel control and diagnostic readback, supports 3 V cranking capability for cold-start automotive conditions, and provides a fail-safe (Limp Home) mode that maintains critical outputs when the microcontroller or SPI link fails. A low-side switch is a power distribution topology in which the MOSFET is placed between the load and ground, allowing the load to be tied to a permanent supply rail (e.g., the vehicle battery). This architecture belongs to the broader category of smart power switches (SPS), which combine a power transistor, gate driver, protection circuitry, and a digital diagnostic interface in a single IC. Smart low-side switches have largely replaced discrete MOSFETs + fuses in body electronics because they provide per-channel current limiting, overload shutdown, open-load detection, and thermal protection without external sense resistors. Key features of the TLE75004EPDXUMA1 include per-channel current limiting, open-load detection in both on and off states, over-temperature shutdown with auto-restart, short-to-ground and short-to-battery protection, and reverse battery protection via an external resistor. The SPI interface operates at clock rates up to 5 MHz, allowing fast update of output states and rapid polling of fault registers. An IDLE pin enables the Limp Home mode where input pins directly drive the outputs without SPI intervention. Typical applications include automotive body control modules (BCMs), door modules, seat controllers, and LED lighting drivers where multiple low-current relays, solenoids, or LEDs must be switched under microcontroller supervision. The PG-TSDSO-14-41 package provides an exposed thermal pad that keeps junction temperature low even when all four channels are delivering full current simultaneously. When designing with this part, ensure the SPI lines are pulled up to VCC and the IDLE pin is tied high for normal SPI-controlled operation. The exposed pad must be soldered to a sufficiently large copper pour (at least 1 cm²) to achieve the datasheet thermal resistance. According to the manufacturer datasheet, the device is qualified to AEC-Q100 Grade 1, making it suitable for under-hood and other harsh automotive environments.
TLE75080ESDXUMA1 - 8-Ch SPI High-Side Switch, 330mA | Infineon
The Infineon TLE75080ESDXUMA1 is an 8-channel high-side power switch in a PG-TSDSO-24-21 (exposed pad) package, delivering 330 mA per channel for automotive and industrial relay and LED loads. Each channel integrates an N-channel MOSFET with active current limiting, and the device communicates over a 16-bit SPI interface for diagnostics and PWM control. A high-side switch (also called a smart power switch) is a semiconductor device that sits between a load and the positive supply rail. It replaces mechanical relays and discrete MOSFETs by combining a power transistor with protection, diagnostic, and communication circuitry. High-side switches sit in the family hierarchy: high-side switch -> power distribution switch -> power management IC -> semiconductor, and they enable centralized load control in body control modules, BCMs, and zonal architectures. Key features include 8 independently controlled channels, 16-bit SPI daisy-chain capability, integrated reverse-battery protection, open-load detection in on and off states, overtemperature shutdown with per-channel thermal sensors, and a Limp Home mode that allows safe operation at 3.0 V cranking transients. The device operates across a wide 4.5 V to 28 V supply range and withstands load-dump transients up to 40 V. The architecture uses N-channel MOSFETs with charge-pump-driven gates for true low-RDS(on) switching. Each channel includes current-limit set registers, individual fault flags, and PWM generation up to several hundred Hz. The exposed-pad package provides a thermal resistance below 30 C/W on standard 2 oz copper, supporting sustained 330 mA output per channel. Typical applications include automotive body electronics (lighting, HVAC blowers, seat control), industrial PLC relay drivers, and 24 V LED matrix modules. The combination of SPI diagnostics and cranking tolerance makes it well suited for 12 V automotive subsystems that must survive cold-crank events down to 3 V. When designing with this part, allocate PCB area for the exposed thermal pad and connect it to a solid copper pour. The Limp Home feature requires the SPI watchdog to be configured in the application firmware; an unconfigured watchdog defaults to fail-safe behavior. Per-channel current limit registers must be tuned to the load to avoid nuisance trips on inrush loads such as incandescent lamps or DC motors. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet and accelerate your evaluation.
TLE75080ESHXUMA1 - 8-Ch SPI High-Side Switch 330mA | Infineon
The Infineon TLE75080ESHXUMA1 is an eight-channel high-side power switch in the PG-TSDSO-24-21 (TSDSO-24) package with 16-bit SPI control, integrated PWM generators, and Limp Home mode, designed for 12 V automotive and industrial loads. Each of the eight channels is rated at 330 mA continuous current and is built on Infineon's Smart Power SPIDER technology, integrating a vertical N-channel power MOSFET with charge pump, gate driver, current sense, and protective circuitry on a single die. The device operates from a nominal 12 V supply (with load-dump and jump-start tolerance typical of the TLE75080 family) and is qualified to AEC-Q100 for automotive body and chassis applications. Key features of this multichannel high-side switch include per-channel diagnostics (open load, short to battery, short to ground, overtemperature), parallel-input capability for direct MCU PWM control, a 16-bit SPI interface for configuration and status readback, and selectable latching or auto-restart fault behavior. The integrated charge pump drives the N-channel MOSFETs fully on at low battery voltage, achieving low R_DS(on) per channel. The Limp Home function allows a predefined safe output pattern if SPI communication is lost, critical for fail-operational body modules. Technically, the TLE75080-ESH belongs to the high-side switch category within the broader power distribution IC hierarchy: high-side switch -> smart power switch -> power management IC -> semiconductor. It is designed as an alternative to discrete MOSFET + fuse combinations, replacing many components with one SPI-controlled block. Each channel's integrated protection eliminates the need for external sense resistors, TVS clamps, and PTCs in many 12 V load drive circuits. Typical applications include automotive body control modules (BCM) driving lamps, LEDs, relays, and small motors; heating systems such as seat heaters and mirror heaters; industrial 24 V (rescaled) load switching; and energy/power distribution nodes in zonal E/E architectures. The PG-TSDSO-24-21 exposed-pad package enables direct PCB thermal dissipation without a heatsink at typical 12 V loads. When designing with this device, follow Infineon's PCB layout guidance for the exposed thermal pad, keep the SPI bus length short, and add a reverse-polarity protection diode at VBAT. Decouple VBAT and VS pins with a 100 nF ceramic plus a low-ESR electrolytic capacitor as recommended in the TLE75080-ESH datasheet. This page synthesizes distributor pricing, drop-in alternatives from the Infineon SPIDER family, and practical design notes for 12 V body-control applications that are not consolidated in the manufacturer datasheet.
TLE75602ESHXUMA1 - 8-Ch SPI Power Switch 330mA | Infineon
The Infineon TLE75602ESHXUMA1 is an 8-channel low-side and high-side SPI-controlled power switch housed in a PG-TSDSO-24-21 package, delivering up to 330 mA per channel for 12 V automotive and industrial loads. Built on Infineon's SPIDER (Smart Power Integration Device with Embedded Regulation) technology, the device integrates eight MOSFET output stages, a 16-bit SPI interface, configurable PWM generators per channel, and comprehensive diagnostic features in a single exposed-pad thermally enhanced surface-mount package. An SPI-controlled power switch (sometimes called a multi-channel high-side switch, low-side switch, or smart solid-state relay) is a power-management IC that replaces discrete MOSFETs, fuses, and relay driver circuitry with an integrated, microcontroller-addressable load driver. It sits hierarchically as a child of power distribution switches, which themselves are a sub-family of power management ICs. By consolidating eight independently controllable outputs behind a serial-peripheral-interface (SPI) command set, the TLE75602-ESH eliminates dozens of discrete components while providing per-channel fault reporting, current monitoring, and PWM dimming that discrete implementations cannot match. Key features include an operating voltage range that supports 3.0 V cranking transients (typical 4.5 V to 28 V with load-dump survivability above this range), per-channel Rds(on) in the sub-200 mΩ class, integrated reverse-battery protection via an external resistor, programmable overcurrent shutdown, open-load detection in both on and off states, and overtemperature pre-warning and shutdown. The 16-bit SPI runs at clock rates up to 5 MHz and allows parallel operation of multiple TLE75602 devices for systems requiring more than eight channels. Architecturally, each of the eight channels combines an N-channel MOSFET output stage with charge pump, gate driver, current-sense amplifier, and fault logic. The on-chip diagnostic block can flag short-to-battery, short-to-ground, open load, and overtemperature events back to the host microcontroller through dedicated SPI status registers, enabling ASIL-aware functional-safety implementations under ISO 26262. Typical applications include automotive body controllers driving lamps, LEDs, relays, and small motors; zone-ECU load switching; industrial 24 V PLC discrete I/O; HVAC blower control; and centralized power distribution modules. The device's AEC-Q100 qualification and 3.0 V cranking capability make it well suited for cold-start conditions. When designing with this part, place at least one 100 nF decoupling capacitor close to the VCC pin and follow the PCB layout recommendations in the Infineon datasheet to keep the exposed thermal pad soldered for low RthJA. Always configure unused channels in a defined OFF state via SPI to avoid floating-output diagnostic noise. This page synthesizes distributor pricing, same-family drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
TLE8082ESXUMA1 - Engine Management PMIC 5V SPI PG-TSDSO-24 | Infineon
The Infineon TLE8082ESXUMA1 is an Engine Management Power Management IC (PMIC) housed in a PG-TSDSO-24 (24-pin TSSOP with exposed pad) package. It integrates a 5 V supply output, four low-side drivers, and an SPI control interface for small-engine and motorcycle ECU applications. According to Infineon's product page, the device accepts a wide 6 V to 40 V input voltage range, making it suitable for 12 V and 24 V automotive battery systems. Engine management PMICs are highly integrated power and driver ICs that combine a microcontroller-compatible supply rail, multiple low-side switches, communication interfaces, and protection features in a single package. They sit at the top of the small-engine ECU power tree, replacing discrete regulators plus discrete MOSFETs and reducing BOM count, PCB area, and quiescent losses. The TLE8082ES family is positioned in Infineon's TLE808x small-engine PMIC lineup. Key features include integrated 5 V linear or switching supply, four low-side driver outputs for injector or relay control, SPI-configurable diagnostics, and built-in protection such as thermal shutdown, overcurrent limiting, and reverse-battery robustness. The PG-TSDSO-24 exposed pad provides a thermal resistance path that supports sustained operation of the integrated drivers at engine ambient temperatures up to the AEC-Q100 automotive qualification envelope. Architecturally, the TLE8082ESXUMA1 combines an internal bandgap reference, a pre-regulator, a 5 V post-regulator, four gate drivers for low-side N-channel MOSFETs, and an SPI slave for microcontroller communication. This integration lets a small 32-bit MCU control fuel injection, ignition, and sensor power without auxiliary driver ICs. Typical applications include small-engine ECUs for motorcycles, scooters, mopeds, marine outboards, generators, and handheld power equipment. The wide VIN range and integrated drivers are tailored to single-cylinder and small-displacement powertrains where PCB area and BOM cost dominate the design. When designing with this part, ensure the exposed pad is soldered to a sufficient copper pour for thermal relief; sustained low-side driver currents can dissipate significant power. Use the SPI watchdog to detect MCU lockup, and follow Infineon's small-engine reference design for injector flyback sizing. This page synthesizes distributor stock, parametric specifications, design considerations, and drop-in alternatives that supplement the manufacturer datasheet.
TLE9104SHXUMA1 - 4-Ch 3A SPI Low-Side Switch | Infineon
The Infineon TLE9104SHXUMA1 is a 4-channel low-side power switch with integrated N-channel MOSFETs, delivering 3 A continuous load current per channel, housed in a 20-pin PG-DSO-20-88 power package. It features a 16-bit Serial Peripheral Interface (SPI) for control, diagnosis, and configuration, plus comprehensive protection including over-current, over-temperature, over-voltage, and open-load detection. A multi-channel low-side driver IC is an integrated circuit that switches multiple resistive or inductive loads to ground using internal MOSFETs, controlled by a digital logic interface. Low-side drivers sit at the bottom of the load path (load connected to supply, switch to ground) and belong to the broader family of power distribution switches, motor/valve drivers, and powertrain switches used in automotive body and engine ECUs. Key features of the TLE9104SHXUMA1 include a 4.5 V to 28 V supply range, very low R_DS(on) per channel for high-efficiency switching, parallel-channel operation up to ~12 A, SPI-configurable dV/dt slew-rate control, and a 5 V VIO logic reference compatible with 3.3 V microcontrollers. The PG-DSO-20-88 exposed-pad package achieves a junction-to-ambient thermal resistance suitable for continuous 3 A per-channel operation with proper PCB copper area. The device is built on Infineon's SMART7 power technology with embedded protection state machine, providing deterministic fault handling required for ASIL-rated systems. The diagnostic block reports per-channel fault status, open-load, short-to-battery, and overtemperature flags through dedicated SPI registers. Typical applications include automotive engine-management loads (solenoid, valve, relay, injector drivers), transmission and gearbox control, body control modules, and 12 V / 24 V industrial switching. When designing, allocate at least 6 cm² of copper area to the exposed pad per channel of continuous current, and respect the SPI timing budget for sequential reads during fault scans. This page synthesizes distributor pricing, drop-in alternatives, and SPI configuration notes not collected in a single datasheet excerpt.
TLE9180D32QKXUMA1 - 6-Ch BLDC Gate Driver 90V LQFP-64 | Infineon
The Infineon TLE9180D32QKXUMA1 is a multi-channel gate driver IC for six N-channel MOSFETs designed for 12 V, 24 V and 48 V brushless DC motor control in automotive environments. Housed in a PG-LQFP-64-27 (LQFP-64 with exposed pad) package, the part uses a high-voltage Smart Power technology that lets bridge, motor and supply pins withstand up to 90 V, while motor pins tolerate negative transients typical of inductive switching. The IC integrates three half-bridge drivers plus a charge pump, current-sense amplifier, and SPI diagnostics, making it a near-complete solution for 3-phase BLDC motor control. A gate driver IC (also called a MOSFET driver or predriver) is a power-management building block that translates low-current logic-level control signals from an MCU into the high peak currents required to rapidly charge and discharge a power MOSFET gate. In the system hierarchy, gate drivers sit between the microcontroller and the power stage: MCU -> gate driver -> power MOSFETs -> motor. Compared with discrete bootstrap drivers, an integrated multi-channel gate driver such as the MOTIX TLE9180D-32QK dramatically reduces BOM count, improves timing skew between high-side and low-side channels, and centralizes protection functions. Key features of this part include support for battery voltages from 5.5 V to 72 V, programmable gate drive currents up to 1 A source/sink, integrated current-shunt amplifier with adjustable gain, and ASIL-C functional safety support per ISO 26262. The device targets safety-relevant applications and is qualified to AEC-Q100 for automotive use. Typical applications are automotive electric water pumps, oil pumps, e-bike and e-scooter traction drives, 48 V mild-hybrid auxiliary drives, BLDC fans and blowers for HVAC, and small industrial 3-phase pumps. The wide input range allows a single PCB design to support both 12 V passenger-vehicle platforms and 48 V commercial-vehicle or mild-hybrid systems, reducing platform SKU count for tier-1 suppliers.
TLF11251EPXUMA1 - 2.5A Half-Bridge Gate Driver | Infineon
The Infineon TLF11251EPXUMA1 is an integrated half-bridge gate driver capable of sourcing/sinking 2.5 A, designed for OPTIREG PMIC TLF35584/85 pairing with AURIX TC38x/TC39x 32-bit microcontrollers. Housed in a 14-pin PG-TSDSO-14-5 package, the device drives a PMOS/NMOS output stage with non-inverting logic and a wide 2.35 V to 7 V supply input. The combination of 60 ns typical propagation delay and 2.5 A peak drive makes it the companion driver for the core voltage rails of high-end 2nd-generation TriCore AURIX microcontrollers. A half-bridge gate driver is a power-management building block that combines a high-side and a low-side MOSFET driver in one IC, translating low-current PWM logic signals from a controller into the high-current gate drive required to switch power MOSFETs or, in this case, a PMOS/NMOS bridge. Within the broader IC taxonomy, this places the part in the gate-driver sub-family of power management ICs, itself a subset of PMIC and analog mixed-signal semiconductors. Half-bridge drivers are commonly used as core-supply pre-regulators or post-regulators next to multi-rail PMICs. Key features include 2.5 A peak gate-drive current, 60 ns propagation delay, non-inverting input logic, and 2.35 V to 7 V supply operation. The PG-TSDSO-14-5 thermally-enhanced small-outline package provides a low thermal resistance path for the high peak currents encountered during MOSFET switching transitions, while the non-inverting interface simplifies PWM routing from the host controller. Internally, the TLF11251EP combines a PMOS high-side path and an NMOS low-side path with adaptive drive strength and protection features. The 2.5 A capability allows it to switch large PMOS/NMOS bridges quickly, reducing switching losses and improving transient response on the AURIX core supply rail. The OPTIREG product family designation confirms Infineon qualification for safety-relevant automotive power architectures. Typical applications include AURIX TC38x/TC39x core supply pre-regulation, OPTIREG TLF35584/85 PMIC companion drivers, automotive 12 V ECU power trees, and industrial 24 V buck/boost pre-drivers. The wide supply range and high drive strength also make it suitable as a general-purpose PMOS/NMOS half-bridge in 5 V and 12 V distributed power systems. When designing with this device, observe the absolute maximum supply rating of 7 V and provide a local 100 nF + 1 µF decoupling network directly at the VCC pin. Keep the gate-drive traces short and width-matched to limit parasitic inductance, which can otherwise cause ringing on the PMOS/NMOS gate that may violate the AURIX core supply tolerance window.
TLF11251LDXUMA1 - 2.5A Half-Bridge Gate Driver for AURIX | Infineon
The Infineon TLF11251LDXUMA1 is a 2.5 A half-bridge gate driver IC housed in a 10-pin PG-TSON-10-2 (exposed pad) package, designed as a companion driver for the OPTIREG PMIC TLF35584/85 in automotive ECU power architectures. The part uses a PMOS/NMOS output stage that delivers 2.5 A peak source/sink current with 60 ns typical rise and fall times, enabling fast switching of power MOSFETs in 12 V automotive battery rails. A half-bridge gate driver is a power-management IC that translates low-current logic-level PWM signals from a microcontroller into the high-current gate-drive signals required to switch the high-side and low-side MOSFETs of a synchronous buck or boost converter. In the broader power-management hierarchy, the TLF11251 sits between the microcontroller (control layer) and the discrete power MOSFETs (switching layer), making it a critical glue device in DC-DC converter sub-systems. Without a dedicated driver, a microcontroller GPIO pin cannot directly charge and discharge a power MOSFET gate fast enough for efficient high-frequency switching. Key specifications include a 3.5 V to 7 V supply range, 2.5 A peak output drive, 60 ns propagation delay matching between high-side and low-side channels, and integrated shoot-through protection that prevents both MOSFETs from conducting simultaneously. The non-inverting input logic simplifies PWM signal routing, and the exposed thermal pad keeps junction temperature low during continuous switching. The driver is qualified to AEC-Q100 for automotive under-hood and chassis applications. The TLF11251 is specifically engineered to pair with Infineon's AURIX TC38x and TC39x 32-bit TriCore microcontrollers, providing the gate-drive stage for downstream buck converters that power the MCU core, ADC, and communication peripherals. The tight propagation-delay matching supports the dead-time control required by the OPTIREG TLF35584/85 PMIC family. Internal shoot-through protection and under-voltage lockout (UVLO) on the driver supply safeguard the power stage during cold-crank and load-dump transients typical of 12 V automotive electrical systems. Typical applications include 12 V automotive DC-DC converters, AURIX TC38x/TC39x ECU power stages, body-control modules, ADAS sensor power rails, and industrial 24 V buck regulators. The 2.5 A drive strength is sufficient for switching most sub-100 V N-channel MOSFETs commonly used in point-of-load converters up to approximately 10 A load. When designing with this part, place the bootstrap capacitor for the high-side channel as close as possible to the BST and SW pins to minimize switching losses. The exposed pad must be soldered to a sufficiently large copper pour to keep junction temperature within the -40 C to +125 C automotive grade-A operating range. This page synthesizes distributor pricing, parametric comparisons, and practical PCB-layout guidance not collected in a single Infineon document.