1ED020I12B2XUMA1 vs 1ED3127MU12FXUMA1 Vergleich
Detaillierter Direktvergleich von 1ED020I12B2XUMA1 von Infineon und 1ED3127MU12FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1ED020I12B2XUMA1 - 1200V Isolated Gate Driver, 2A, DESAT | Infineon
1ED020I12B2XUMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | 1ED020I12B2XUMA1 | 1ED3127MU12FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,65 | $0,74 |
| Driver Type | Single-channel IGBT gate driver, galvanically isolated | — |
| Isolation Technology | Coreless transformer (magnetic coupling) | — |
| Isolation Voltage (Vrms) | 4500 Vrms | — |
| Number of Channels | 1 | — |
| Output Current (typ.) | 2 A source / 2 A sink | — |
| Propagation Delay (typ.) | 35 ns | 15 ns |
| Supported Switch Voltage Class | Up to 1200 V IGBT / SiC MOSFET | — |
| DESAT Protection | Yes (programmable threshold) | — |
| Miller Clamp | Yes (integrated 2 A clamp FET) | — |
| Input Supply (VCC1) | 5 V (logic side) | — |
| Output Supply (VCC2) | Unipolar 15 V or bipolar -8.5 V / 15 V | — |
| Gehäuse | PG-DSO-16-15 (300 mil wide-body DSO-16) | PG-DSO-8-72 (SOIC-8 wide-body) |
| Creepage Distance | 8 mm | — |
| Betriebstemperatur | -40 °C to +125 °C | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL-3 (per JEDEC J-STD-020) | — |
| Compliance | RoHS compliant | — |
| Funktion | — | Single-channel isolated gate driver |
| Anzahl der Ausgänge | — | 1 |
| Ausgangskonfiguration | — | High-side / Low-side, Inverting / Non-Inverting |
| Peak Output Current | — | 10 A (source/sink) |
| Continuous Output Current | — | 9 A |
| Supply Voltage (VCC2 secondary) | — | 12 V to 35 V |
| Supply Voltage (VCC1 primary) | — | 3 V to 5.5 V |
| Delay Matching (typ.) | — | 30 ns |
| Galvanic Isolation | — | 3000 Vrms (coreless transformer) |
| Betriebstemperaturbereich | — | -40C to +125C |
| Protection Features | — | Miller clamp, UVLO, DESAT short-circuit protection |
| RoHS-Status | — | Compliant |
| Drives | — | IGBT, MOSFET, SiC MOSFET |