1ED020I12B2XUMA1 vs 1ED3127MU12FXUMA1 对比

详细并排对比 1ED020I12B2XUMA1 出自 Infineon 和 1ED3127MU12FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 量产中

规格对比

参数 1ED020I12B2XUMA1 1ED3127MU12FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.65 $0.74
Driver Type Single-channel IGBT gate driver, galvanically isolated —
Isolation Technology Coreless transformer (magnetic coupling) —
Isolation Voltage (Vrms) 4500 Vrms —
Number of Channels 1 —
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns 15 ns
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封装 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-8-72 (SOIC-8 wide-body)
Creepage Distance 8 mm —
工作温度 -40 °C to +125 °C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
功能 — Single-channel isolated gate driver
输出数量 — 1
输出配置 — High-side / Low-side, Inverting / Non-Inverting
Peak Output Current — 10 A (source/sink)
Continuous Output Current — 9 A
Supply Voltage (VCC2 secondary) — 12 V to 35 V
Supply Voltage (VCC1 primary) — 3 V to 5.5 V
Delay Matching (typ.) — 30 ns
Galvanic Isolation — 3000 Vrms (coreless transformer)
工作温度范围 — -40C to +125C
Protection Features — Miller clamp, UVLO, DESAT short-circuit protection
RoHS 状态 — Compliant
Drives — IGBT, MOSFET, SiC MOSFET

数据手册与资源

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