1ED3122MC12HXUMA1 vs 2ED2738S01GXTMA1 Vergleich
Detaillierter Direktvergleich von 1ED3122MC12HXUMA1 von Infineon und 2ED2738S01GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1ED3122MC12HXUMA1 | 2ED2738S01GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $0,95 |
| Product Type | Isolated Gate Driver (single-channel) | — |
| Isolation Technology | Coreless Transformer (CT) | — |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | — |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | — |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | — |
| Betriebstemperatur | -40 C to +125 C | -40C to +125C |
| Gehäuse | PG-DSO-8-66 (300-mil DSO-8) | PG-VSON-10-5 (3x3 mm) with EP |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 2 | 2 (1 year) |
| RoHS-Status | Compliant | Compliant |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Output Current (Source, peak) | — | 4.0 A |
| Output Current (Sink, peak) | — | 8.0 A |
| Output Current (Source, typ) | — | 1.0 A |
| Output Current (Sink, typ) | — | 2.0 A |
| Anzahl der Ausgänge | — | 1 |
| Input Type | — | Non-Inverting |
| Input Logic Compatibility | — | TTL |
| Supply Voltage (VDD/VCC) | — | 6 V to 20 V |
| Bootstrap Supply Voltage | — | Up to 600 V (HS pin rating) |
| Propagation Delay (typ) | — | 120 ns |
| Channel-to-Channel Match | — | 40 ns |
| Rise/Fall Time (1 nF load) | — | 1.5 ns / 1.5 ns |
| Negative Transient Immunity (HS) | — | -10 V to +20 V transient |
| Under-Voltage Lockout | — | VCC and Bootstrap |
| Bootstrap Diode | — | Integrated |